2N3329 ETC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 1
Technical content
- • • See Section 4
- Small-Signal Amplifiers BENEFITS
- Analog Multipliers • Ease of Amplifier Design I DSS & Gfs Closely Specified
- Modulators *ABSOLUTE MAXIMUM RATINGS (25°C) TO-72 See Section 5 Total Device Dissipation at (or below) o~: 1\\ *ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted) 2N3329 2N3330 2N3331 2N3332 Characteristic Unit Test Conditions Min Mox Min Mox Min M" Min M" , 0.01 0.01 0.01 0.01 VGS = 10 V, Vas'" 0 ---, IGSS Gate Reverse Current pA '0 10 '0 10 VGS = lOY, VOS-O, TA= 150°C - Gate-Source Breakdown 3 S BVGSS Voltage 20 20 20 20 IG'" lOpA, Vas= 0 _T V 4 A T VGS(ott) Gate-Source Cutoff Voltage 5 6 8 6 VDS = -15V,IO=-10pA
5 C lOSS Saturation Drain Current -, -3 -2 -6 -5 -'5 -, -6 mA VOS = -lOV, VGS=O
- Drain-Source ON 6 tOS(on) Resistance 1000 800 600 <l IO=- lOO I1A ,VGS=O 7 9is Common-Source Input Conductance 0.2 0.2 0.2 0.2 Common-Source Reverse 2N3329 10 = -1 rnA 8 9" Transfer Conductance 0' 0.' 0.' 0.' 2N3330 10=-2mA - IJmho VOS=~10V -SmA f = 1 kHz 9 0 Common-Source Output 20 40 100 20 2N3331 10 = 90, Conductance 10~ 2N3332- 10= -1 rnA Common-Source Forward '000 2000 '500 3000 2000 4000 1000 2200 IEJI ~ -A ", Transconductance 900 1350 1800 900 2.!.~ Common-Source Input '2 C Ciss Capacitance 20 20 20 20 pF VOS=-10V,VGS=lV f = 1 MHz - VOS=-5V,IO=-lmA 13 NF Noise Figure 3 3 4 , f= 1 kHz - dB Rgen=lMH '4 NF Noise Figure 5 VOS=-5V,ID=-lmA t= 10 Hz Rgen = 10 Mfl
- JEDEC registered data PC NOTES: 1. Due to symmetrical geometry, these units may be operated With source and drain leads interchanged_ 2_ Derate linearly to 175cC free-air temperature at rate of 2_0 mwtC © 1977 Sdlconlx Incorporated 3·3