Download PDFJANS2N2920 MICROSEMI
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6 Lake Street, Lawrence, MA 01841
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http://www.microsemi.com NPN SILICON DUAL TRANSISTOR Qualified per MIL-PRF-19500 /355 T4-LDS-0202 Rev. 1 (110638) Page 1 of 4 DEVICES LEVELS 2N2919 2N2919L 2N2919U JAN 2N2920 2N2920L 2N2920U JANTX JANTV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage V CEO 60 Vdc Collector-Base Voltage V CBO 70 Vdc Emitter-Base Voltage V EBO 6.0 Vdc Collector Current I C 30 mAdc One Section 1 Both Sections 2 Total Power Dissipation @ T A = +25°C PT 200 350 mW Operating & Storage Junction Temperature Range T J, Tstg -65 to +200 °C NOTES: 1. Derate linearly 1.143mW/°C for TA > +25°C (one section) 2. Derate linearly 2.000mW/°C for TA > +25°C (both sections) ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Min. Max. Unit OFF CHARACTERTICS Collector-Emitter Breakdown Voltage V(BR)CEO Vdc IC = 10mAdc; Pulsed 60 Collector-Base Cutoff Current ICBO ηAdc μAdc VCB = 45Vdc VCB = 70Vdc 2.0 Emitter-Base Cutoff Current IEBO VEB = 5.0Vdc VEB = 6.0Vdc 2.0 ηAdc μAdc TO-78
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http://www.microsemi.com T4-LDS-0202 Rev. 1 (110638) Page 2 of 4 ELECTRICAL CHARACTERISTICS (con’t) Parameters / Test Conditions Symbol Min. Max. Unit ON CHARACTERTICS Forward-Current Transfer Ratio IC = 10μAdc, VCE = 5.0Vdc IC = 100μAdc, VCE = 5.0Vdc IC = 1.0mAdc, VCE = 5.0Vdc 2N2919, 2N2919L , 2N2919U h FE 60 100 150 240 325 600 IC = 10μAdc, VCE = 5.0Vdc IC = 100μAdc, VCE = 5.0Vdc IC = 1.0mAdc, VCE = 5.0Vdc 2N2920, 2N2920L, 2N2920U hFE 175 235 300 600 800 1000 Collector-Emitter Saturation Voltage VCE(sat) Vdc IC = 1.0mAdc, IB = 100μAdc 0.3 Base-Emitter Saturation Voltage VBE(sat) Vdc IC = 1.0mAdc, IB = 100μAdc 0.5 1.0 DYNAMIC CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Forward Current Transfer Ratio, Magnitude |hfe| IC = 0.5mAdc, VCE = 5.0Vdc, f = 20MHz 3.0 20 Small-Signal Short Circuit Input Impedance hje kΩ IC = 1.0mAdc, VCE = 5Vdc, f = 1.0kHz 3.0 30 Small-Signal Short Circuit Output Admittance hoe μmhos IC = 1.0mAdc, VCE = 5Vdc, f = 1.0kHz 60 Output Capacitance VCB = 5.0Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz Cobo 5.0 pF Noise Figure dB IC = 10μAdc, VCE = 5Vdc, f = 100Hz, RG = 10kΩ F 1 5.0 IC = 10μAdc, VCE = 5Vdc, f = 1.0kHz, RG = 10kΩ F 2 3.0 IC = 10μAdc, VCE = 5Vdc, f = 10kHz, RG = 10kΩ F 3 3.0
2 Millimeters are given for general information only. 4 Lead number 4 and 8 omitted on this variation. 6 TL shall be measured from maximum CD. 7 Details of outline in this zone are optional. 8 CD1 shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling. direct methods or by the gauge and gauging procedures described on gauge drawing GS-1. 13 In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. FIGURE 1. Physical dimensions 2N2919, 2N2919L, 2N2920, and 2N2920L (TO-78).
2 Millimeters are given for general information only. 3 In accordance with AMSE Y14.5M, diameters are equivalent to φx symbology. FIGURE 2. Physical dimensions (2N2919U and 2N2920U) Surface mount.