2N2609 MICROSEMI

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 1

Technical content

Qualified per MIL-PRF-19500/296 Devices Qualified Level 2N2609 JAN ABSOLUTE MAXIMUM RATINGS (TA = +250C unless otherwise noted) Parameters / Test Conditions Symbol Value Units Gate - Source Voltage V GSS 30 V Power Dissipation (1) T A = +25 0 C P D 300 mW Operating Junction & Storage Temperature Range T op , T stg - 65 to +200 0 C (1) Derate linearly 1.71 mW/ 0 C for T A > +25 0 C. TO - 18 (TO - 206AA) *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = +250C unless otherwise noted) PARAMETERS / TEST CONDITIONS Symbol Min. Max. Units Gate - Source Breakdown Voltage V DS = 0, I G = 1.0 µAdc V (BR)GSS Vdc Gate Reverse Current V DS = 0, V GS = 30 Vdc V DS = 0, V GS = 15 Vdc IGSS 22.5 ηAdc Drain Current V GS = 0, V DS = 5.0 Vdc IDDSS - 2.0 - 10.0 mAdc Gate - Source Cutoff Voltage V DS = 5.0 V, I D = 1.0 µAdc V GS(off) 0.75 6.0 Vdc Magnitude of Small - Signal, Common - Source Short - Circuit Forward Transfer Admittance V GS = 0, V DS = 5.0 Vdc, f = 1.0 kHz Y fs2  2,000 6,250 µmho Small - Signal, Common - Source Short - Circuit Input Capacitance V GS = 0, V DS = 5.0 Vdc, f = 1.0 MHz C iss pF Common - Source Spot Noise Figure V GS = 0, V DS = 5.0 Vdc, f = 1.0 kHz B W = 16%, R G = 1.0 megohms, e gen = 1.82 mVdc, R L = 220 Ω NF 3.0 dB

6 Lake Street, Lawrence, MA 01841

1 - 800 - 446 - 1158 / (978) 794 - 1666 / Fax: (978) 689 - 0803 120101 Page 1 of 1