2N2604_1 MICROSEMI

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  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

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6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http: //www.microsemi.com PNP SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/354 T4-LDS-0092 Rev. 2 (101320) Page 1 of 4 DEVICES LEVELS 2N2604 2N2604UB JAN 2N2605 2N2605UB JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol 2N2604 2N2605 Unit Collector-Base Voltage V CBO 80 70 Vdc Collector-Emitter Voltage V CEO 60 Vdc Emitter-Base Voltage V EBO 6.0 Vdc Collector Current I C 30 mAdc Total Power Dissipation @ TA = +25°C (1) P T 400 mW/°C Operating & Storage Junction Temperature Range T J, Tstg -65 to +200 °C THERMAL CHARACTERISTICS Parameters / Test Conditions Symbol Max. Unit Thermal Resistance, Junction-to-Ambient RθJA 437 °C/mW UB 275 Note: 1/ Consult 19500/354 for thermal curves ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Min. Max. Unit OFF CHARACTERTICS Collector-Base Cutoff Current ICBO VCB = 80V dc VCB = 70V dc VCB = 50V dc VCB = 50V dc, TA = +150°C 2N2604, UB 2N2605, UB 2N2604, 2N2605, UB 2N2604, 2N2605, UB 10.0 10.0 10.0 5.0 uAdc nAdc uAdc uAdc Collector-Emitter Breakdown Current IC = 10mAdc V(BR)CEO 60 Vdc Emitter-Base Cutoff Current VEB = 6.0Vdc VEB = 5.0Vdc IEBO 10.0 2.0 uAdc ηAdc Collector-Emitter Cutoff Current VCE = 50Vdc ICES 1 0 ηAdc TO-46 (TO-206AB)

6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http: //www.microsemi.com T4-LDS-0092 Rev. 2 (101320) Page 2 of 4 ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (CONT.) Parameters / Test Conditions Symbol Min. Max. Unit ON CHARACTERTICS (2) Forward-Current Transfer Ratio hFE IC = 10μAdc, VCE = 5.0Vdc 2N2604, UB 2N2605, UB 100 120 300 IC = 500μAdc, VCE = 5.0Vdc 2N2604, UB 2N2605, UB 150 180 450 IC = 10mAdc, VCE = 5.0Vdc 2N2604, UB 2N2605, UB 100 160 400 IC = 10mAdc, VCE = 5.0Vdc, TA = -55°C 2N2604, UB 2N2605, UB Collector-Emitter Saturation Voltage VCE(sat) Vdc IC = 10mAdc, IB = 500μAdc 0.3 Base-Emitter Saturation Voltage VBE(sat) Vdc IC = 10mA, IB = 500μAdc 0.7 0.9 DYNAMIC CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Small-Signal Short-Circuit Input Impedance hie kΩ IC = 1.0mAdc, VCB = 5.0Vdc, f = 1.0kHz 2N2604, UB 2N2605, UB 1.0 2.0 Small-Signal Open-Circuit Forward Current Output Admittance hoe μmhos IC = 1.0mAdc, VCE = 5.0Vdc, f = 1.0kHz 2N2604, UB 2N2605, UB Small-Signal Short-Circuit Forward Current Transfer Ratio hfe IC = 1.0mAdc, VCE = 5.0Vdc, f = 1.0kHz 2N2604, UB 2N2605, UB 150 180 450 Magnitude of Small-Signal Forward Current Transfer Ratio |hfe| IC = 0.5mAdc, VCE = 5.0Vdc, f = 30MHz 1.0 8.0 Output Capacitance Cobo pF VCB = 5.0Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0MHz 6.0 Noise Figure dB VCE = 5.0Vdc, IC = 10μAdc, Rg = 10kΩ, f = 100Hz VCE = 5.0Vdc, IC = 10μAdc, Rg = 10kΩ, f = 1.0kHz VCE = 5.0Vdc, IC = 10μAdc, Rg = 10kΩ, f = 10kHz F 1 5.0 3.0 3.0 (2) Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2.0%

  1. Dimensions are in inches. Lead 1 is emitter, lead 2 is base, and lead 3 is collector.
  2. Millimeters are given for general information only.
  3. Symbol TL is measured from HD maximum.
  4. Details of outline in this zone are optional.

measured by direct methods or by the gauge and gauging procedure.

  1. Symbol LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum.
  2. Lead number three is electrically connected to case.
  3. Beyond r maximum, TW shall be held for a minimum length of .011 inch (0.28 mm).
  4. Symbol r applied to both inside corners of tab.
  5. In accordance with ASME Y14. 5M, diameters are equivalent to φx symbology.

FIGURE 1. Physical dimensions - (TO-46).

  1. Dimensions are in inches.
  2. Millimeters are given for general information only.
  3. Hatched areas on package denote metallized areas
  4. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid.
  5. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.

FIGURE 2. Physical dimensions, surface mount (UB version).