2N2201 NJSEMI
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New Jersey Semt-Conduator Products, Ine. 2OSTERNAVE. = S=~<CS~sSsSSS::TTTTC“‘“‘“‘CCSN. TELEPHONE: (973) 976-2022 SPRINGFIELD, NEW JERSEY 07081 F (212) 227-6008 . “AX: 376-8960 USA 2N2201 os) 2N2202 2N2203 2N2204 TRANSISTOR, ‘POWER AMPLIFIER I, General Description This device is an NPN, silicon, triode power transistor designed primarily for amplifier applications. Il. Mechanical Data A. Outline Per outline drawing B. Terminal Designations Terminal Element
1 Emitter
2 Base
3 Collector ;
Case Connected to collector Cc. Handling Precautions None D. . Mounting Positions Any I. Maximum Ratings A. Temperature 1. Storage temperature range, Tstg -65 to 175°C 2. Operating case temperature range, Tc -65 to 175°C 3. Lead temperature 1/16" t 1/32" from case for 10 sec. 260°C B. Voltage, 25°C Case Temperature 1. Collector-base voltage, Vopo 120 V 2. Emitter-base voltage, Vppo 10V 3. Collector-emitter voltage, VcgQ 100 V VY NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However \\J Semti-Conductors .ssties no responsibility for any errors or omissions discovered in its use NJ Semi-C onductors encourages ‘ustemers to verify that datasheets are current before placing orders
Type No. 2N2201 2N2202 2N2203 2N2204 Cc. Current 1. Continuous collector current la 2. Continuous base current ‘ 500 ma 2N2202, 2203 D. Power 2N2201 2N2204 ‘ Continuous power dissipation at or below 25°C case temp. " 15 w 15 w 100°C case 10w 10w 25°C ambient aw lw Derating factor Above 25°C case 66.7 66. 7mw/°C Above 100°C case 133 133 mw/°C Above 25°C ambient 13.3 6. 6@mw/°C IV. Electrical Characteristics, 25°C Case Temperature : Min. Max. 1. Collector cutoff current, IcEx ° Vopg=120V, VpR=-1.5V, To=150°C 250 pa 2. Collector cutoff current, Icpry VcE=120V, Vpp=1. 5V 10 pa 3. Collector cutoff current, I Vop = 120V ” “CBO 50 pa 4. Collector cutoff current, I Vop=30V, To=150°C” CBO 200 - pa 5. Emitter cutoff current, Ippo , Vp = 10V 250 pa 6. Collector cutoff current, Iono9 Ip=0, VoR=60V 10 ya 7. Collector-emitter open base sustain voltage, VCEO(SUS)- * Tp=0, I¢=16ma 100 Vv 8. Collector-emitter breakdown voltage, base open, BVoRo* Tp=0, I¢=250 pa 100» Vv 9. DC forward current transfer ratio, hpp * Ic=200ma, Vog= 6. 8V 25 90 10. DC forward current transfer ratio, hpp * Ig=10ma, Vog=6. 8V 10 11. DC forward current transfer ratio, hpp « Ip=1 amp, Vog=10V : 10
Type No. 2N2201 2N2202 2.N2203 2N2204 12. DC forward current transfer ratio, hpp * Min, Max: Ic=200ma, Vog=10V 30-90 13. Collector-emitter saturation voltage, v, * Tc=200ma, Ty=40ma * "ce (sat) LT Vv 14, Base-emitter voltage, Vpn * Tc=200ma, Vop=6. 8V ; 2.0 V 15. Baseremitter voltage, Var * Ic=200ma, Vog=10V 1.5 V 16. DC Input impedance, hyp * Vog=l0V, Ig=8ma 200 2 B, Dynamic 1. Magnitude of common emitter forward current transfer ration 10 f=1mc, I9=30ma, VoR730V 2. Common base output capacitance, C,, 15 pf f=lmc, Ig=30ma, Vop=30V 3. Common emitter small-signal short-circuit forward current transfer ratio, h, 30 1q=50ma, Vopnsiv, f=1ke * Pulsed measurement at 2% duty cycle, 300 psec pulse width. aa * mpnietsgretretter, (—" .275 MI 5 ‘ease £8 26275 MM. jh aa || se 1 Se
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