2N2023 MICROSEMI

Document overview

  • Manufacturer or author: Provided By digicamel.com
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Technical content

Silicon Controlled Rectifiers lena M es VM A K Dim. Inches Millimeter AW --- --- --- 1 B 1.050 1.060 26.67 26.92 across flats D 5.850 6.144 149.10 156.06 3 6.850 7.375 173.99 187.33 I H F 797 -827 20.24 21.01 G 276 286 .701 7.26 ot J 425 499 10.80 12.67 2 7S K — .260 .280 6.60 7M Dia. AT = F M — .500 600 12.70 15.24 =~ N 140 150 3.56 3.81 TO-209AC (TO-94) Note 1: 1/2-20 UNF-3A Note 2: Full thread within 2 1/2 threads Microsemi Forward & Reverse Reverse Transient Catalog Number Repetitive Blocking Blocking . >N2023 25 25y @ High dv/dt-100 V/usec. 2N2024 50V 50V ©1400 Amperes surge current 2N2025 100V 100V ® Low forward on-state voltage 2N2026 150V 150V ® Package conforming to TO-209AC 2N2027 200V 200V outline 2N2028 250V 250V e . 2N2029 300V 300V Economical for general purpose phase 2N2930 400V 400V control applications To specify dv/dt higher than 200V/usec., contact factory.

Electrical Characteristics

Max. RMS on-state current 'T(RMS) 110 Amps Te = 110°C Max. average on-state cur. 'T(AV) 70 Amps Tc = 110°C Max. peck on-state voltage VIM 1.6 Volts 'TM = 220 A(peak) Max. holding current ty 200 mA Mox. peak one cycle surge current 'TsM 1400 A Tc = 110°C, 60 Hz Max. I2t capability for fusing 2t 8130A2S t = 8.3 ms Thermal and Mechanical Characteristics Operating junction temp range Ty -65°C to 150°C Storage temperature range TSTG -65°C to 150°C Maximum thermal resistance Reuc 0.40°C/W Junction to case Typical thermal resistance (greased) @CcS 0.20°C/W Case to sink Mounting torque 100-130 inch pounds Weight 3.6 ounces (102.0 grams) typical ° LAWRENCE ° 6 Lake Street Lawrence, MA 01841 ~24- MICFOSCIN Bs tel of 24-07 Rov FAX: (978) 689-0803 www.microsemi.com

Critical rate of rise of on-state current (note 1) _—di/dt 100A /usec. Ty = 125°C Typical delay time (note 1) td 3.0 usec. 5 Typical circuit commuted turn-off time (note 2) tg 100 usec. TJ = 125°C Note 1: 'TM = 50A, YD = VDRM. YGT = 12V open circuit, 20 ohm-0.1 usec. rise time Note 2: 'TM = 50A, di/dt = 5A/usec., VR during turn-off interval = SOV min., reapplied dv/dt = 20V/usec., linear to rated VDRM, VGT = OV Triggering Max. gate voltage to trigger Vet 3.0V Ty = 25°C Max. nontriggering gate voltage Veo 0.25V Ty = 125°C Max. gate current to trigger ‘GT 100mA Ty = 25°C Max. peak gate power Pom 15W Average gate power PG(av) 3.0W tp = 10 usec. Max. peak gate current ‘CM 4.0A Max. peak gate voltage (forward) Vom 10V Max. peak gate voltage (reverse) VoM 5.0V Blocking Max. leakage current 'DRM,| RRM 10mA Ty =150°C & VDRM,VRRM Max. reverse leakage 'DRM,| RRM 100uA Vy =25°C & VORM,YRRM Critical rate of rise of off-state voltage dv/dt 100V/usec. Ty =150°C 04-24-07 Rev. 1

Typical Forward On—State Characteristics Maximum Power Dissipation 10000. er 2 105 eo SSEEEEEEee PCT et a 90 0° 180 soo JIS f oF \\/ A OO 575 ee SEERA BCI 3 60 50" PFCEELLEREE fot Ee we Pot Aa tt 00 fier t | og | AR ET TT a A cl E15 Yj JeaenSeS7cc5ss2 ee be EEE 2 4] 600 a a 0 10 20 30 40 50 60 70 80 90 100 400 {tt ta Average On-State Current — Amperes PPP yAT TT EET TT Fo LALIT ETT ET) tes S 00 J_/\\ Transient Thermal Impedance oe LUT TT TT ~ 199 (2srcd_/l 25P B06 ae a | 5 80 O05 © oO] EET TTT

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ees ee ee i | 5 Y PAS ee CEI Po TIT TT TTT TTT] eke AI 8 E 5 2 seo, eT 2 2 5 25 = 10 3f 0 CT 8 12 16 20 24 28 32 36 001 oO ot 10 10 100 Instantaneous On-State Voltage — Volts Time in Seconds Figure 2 Forward Current Derating § 150 ewol WL | | TTT i PRSCCOCT f FENSCEEEH =CCCRRALOO © 0 INN Foo || TIE TTT 2 100 § coh 1 | bel footer her |_| % 10 20 30 40 50 60 70 80 90 100 Average On-State Current — Amperes 04-24-07 Rev. 1