2N1016 NJSEMI

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Technical content

<~>E.ml-L-ona.u.cko'i u-^i , Li ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. NPN POWER TRANSISTROS 2N1015/2N1016 Conforms to TO-82 Outline Features:

  • Gold Alloy Process
  • No forward bias secondary breakdown to

100 Volts

  • High reverse bias S.O.A. for inductive loads
  • Low thermal resistance with copper base
  • 150 watt dissipation
  • Protection from thermal fatigue with hard solder and molydenum construction
  • 25 volt VEBO
  • LOW V CE Isat)
  • Lifetime Guarantee Inches Millimeters iymbo A d 0D, <t>0, e H L N q Q s ... Mm. .500 .045 .140 1.240 .730 .360 .180 .014 .140 .130 .550 .550 .810 .105 .480 .050 ViB-24 Max. .560 .060 .170 1.280 .770 1.125 .400 .200 .025 .170 .190 .590 .590 .850 .140 .520 .070 UNF-2A Min. 12.70 1.14 3.56 31.50 18.54 9.14 4.57 .36 3.56 3.30 13.97 13.97 20.57 2.67 12.19 1.27 Max. 14.22 1.52 4.32 32.51 19.56 28.58 10.16 5.08 .64 4.32 4.83 14.99 14.99 21.59 3.56 13.21 1.78 Finish—Nickel Plate. Approx. Weight—.9 02. (25 g). 1. Complete threads to extend to within 2'/4 threads of seating plane. 2. Contour and angular orientation of terminals is undefined. 3. Pitch.diameter of Y,.-24 UNf-2A (coated) threads (ASA B1.1-1 960). Applications:
  • High Power Switching
  • Amplifiers
  • Servo Systems
  • Regulators
  • Modulators TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960

7.5 Amperes

VCEO isos) 2N1015 + 2N1016 + 30 2N1015A + 2N1016A+ 60 2N1015B + 2N1016B+ 100 2N1015C+ 2N1016C* 150 2N1015D* 2N1016D+ 200 2N1015E+ 2N1016E+ 250 Maximum Ratings and Characteristics T c = 25°C unless specified * Operating and storage temperature Collector-emitter sustaining voltage * Emitter-base voltage * Continous collector current * Continous base current * Thermal resistance * Power dissipation Tc = 45°C Power dissipation Tc = 100°C VcEO(sus) VEBO Ic IB Rejc FT Pr JEDEC 2IM1015. 2IM1016 — 65 TO 150

30 TO 250

7.5 .87 150 «• ^H Volts Volts Amps Amps °C/W Watts Watts

  • JEDEC Registered Parameters NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors

Electrical Characteristics TC=25°C unless otherwise specified Symbol Minimum Typical Max. Units 2N1016/2N1016 Collector current at VCEX = VCE (from max.-ratings), Tj = 150°C, VBE = -1.5 Vdc ICEX •• 2 *20 mAdc Switching time, delay plus rise time td+tr • • 3 .... jusec Second breakdown. Collector Current, VCE = 100V., Tc = 45°C RB = 50 ohms, VBE =-6.0 volts, Ic = 2.0 Amperes, Joules Gain-bandwidth, VCE = 10 volts, Ic = 0.5 Amps, Kilohertz ft 250 • • Khz

2 N1015

DC current gain at VCE=4 Vdc, lc = 2 Adc hpE *10 14 2N1016 DC current gain at VCE =4 Vdc, Ic = 5 Adc nFE *10 18 *JEDC registered parameters. Typical Characteristics so ao . . : :. _•. \\ • - V X Ser 2NIOI5 Series i es *S>i. ~ -": : - =

  • ' ' : : : : :: — = ::-^:: "^n " f"^w === — VCE* Tc=2 ^E= - - - . » Volts 5?C EEE :-j f^r : : t ; ; -. - :-: .. — ._ -+'•'••_ :~'i ;- rr -l'~!
  • .-;.; : : = rr — 2 45678 Collector Current,ICiAmperes Typical dc gain versus collector current at Tc = 25°C. -- ~ .'_".:"::: '• — i\\2 :•„: :~.~r m m ;.rrr_ _:-_:- |-1 1 =•3 S -r— r m -H— m —i1- 1 1 - • t-/^- ~~- U.^^- :::: 1.5 Bose Voltage, VBE,Volts Typical base voltage vs. Collector Current characteristics at To = 25°C. SAFE OPERATING AREA 1.0 0.5 0.1 MAX. IC — o^l Maximum Forward Bias Safe Operating Area Single Non-repetitive Pu se Tc = 45°C These forward Bias Curves S s \\y be used for all Transistors except the maximum collector-emitter voltage cannot be exceeded. I III s vC ? ^\\5* X^j N $ X !\\\\ iu X 100 200 Collector Emitter Voltage, VCE. Volts