2MBI75VA-120-50 FUJI

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 6

Technical content

Features

Low Inductance module structure

Applications

AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at T C=25°C unless otherwise specified) Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Collector current IC Continuous TC=100°C 75 AIC pulse 1ms 150 -IC 75 -IC pulse 1ms 150 Collector power dissipation PC 1 device 390 W Junction temperature Tj 175 °COperating junction temperature (under switching conditions) Tjop 150 Case temperature TC 125 Storage temperature Tstg -40 ~ 125 Isolation voltage between terminal and copper base (*1) Viso AC : 1min. 2500 VAC Screw torque Mounting (*2) - 5.0 N mTerminals (*3) - 5.0 Note *1: All terminals should be connected together when isolation test will be done. Note *2: Recommendable Value : 3.0-5.0 Nm (M5 or M6) Note *3: Recommendable Value : 2.5-3.5 Nm (M5) Electrical characteristics (at T j= 25°C unless otherwise specified) Items Symbols Conditions Characteristics Unitsmin. typ. max. Zero gate voltage collector current ICES VGE = 0V, VCE = 1200V - - 1.0 mA Gate-Emitter leakage current IGES VCE = 0V, VGE = ±20V - - 200 nA Gate-Emitter threshold voltage VGE (th) VCE = 20V, IC = 72mA 6.0 6.5 7.0 V Collector-Emitter saturation voltage VCE (sat) (terminal) VGE = 15V IC = 75A V Tj=125°C - 2.30 - Tj=150°C 2.35 VCE (sat) (chip) VGE = 15V IC = 75A Tj=125°C - 2.20 - Tj=150°C 2.25 Internal gate resistance RG (int) - - 10 - Ω Input capacitance Cies VCE = 10V, VGE = 0V, f = 1MHz - 6.0 - nF Turn-on time ton VCC = 600V LS = 30nH IC = 75A VGE = ±15V RG = 2.2Ω Tj = 150°C - 600 - nsec tr - 200 - tr (i) - 50 - Turn-off time toff - 600 - tf - 40 - Forward on voltage VF (terminal) VGE = 0V IF = 75A V Tj=125°C - 1.95 - Tj=150°C 1.90 VF (chip) VGE = 0V IF = 75A Tj=125°C - 1.85 - Tj=150°C 1.80 Reverse recovery time trr IF = 75A - 150 - nsec Thermal resistance characteristics Items Symbols Conditions Characteristics Unitsmin. typ. max. Thermal resistance (1device) Rth(j-c) IGBT - - 0.38 °C/WFWD - - 0.58 Contact thermal resistance (1device) (*4) Rth(c-f) with Thermal Compound - 0.050 - Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.

IGBT Modules2MBI75VA-120-50 http://www.fujielectric.com/products/semiconductor/ Characteristics (Representative) 100 120 140 160 0 1 2 3 4 125°CTj=25°C 150°C 5 10 15 20 25 IC=150A IC=75A IC=37.5A 100 120 140 160 0 1 2 3 4 5 VGE=20V 15V 12V 10V 100 120 140 160 0 1 2 3 4 5 V GE= 20V 12V 15V 10V 0.1 100 0 10 20 30 Cies Coes Cres -20 -15 -10 -800 -600 -400 -200 200 400 600 800 VCE VGE Collector current vs. Collector-Emitter voltage (typ.) Tj= 150°C / chip Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25°C / chip Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip Collector current vs. Collector-Emitter voltage (typ.) VCC=600V, IC=75A, Tj= 25°C Gate Capacitance vs. Collector-Emitter Voltage Dynamic Gate Charge (typ.) VGE= 0V, ƒ= 1MHz, Tj= 25°C VGE= 15V / chip Collector-Emitter Voltage: VCE [V] Collector Current: IC [A] Gate-Emitter Voltage: VGE [V] Collector-Emitter Voltage: VCE [V] Collector-Emitter voltage: VCE [V] Collector current: IC [A] Collector-Emitter voltage: VCE [V] Collector current: IC [A] Collector-Emitter voltage: VCE [V] Gate Capacitance: Cies, Coes, Cres [nF] Gate charge: Qg [μC] Gate-Emitter voltage: VGE [V] Collector-Emitter voltage: VCE [V]

http://www.fujielectric.com/products/semiconductor/ 100 1000 10000 0 100 200 100 1000 10000 1 10 100 100 120 140 160 0 400 800 1200 1600 1 10 100 Tj=125oC Tj=150oC 0 50 100 150 200 Tj=125oC Tj=150oC 100 1000 10000 0 100 200 toff ton tr tf toff ton tr tf toff ton tr tf Eoff Err Eon Eoff Err Eon Reverse bias safe operating area (max.) Switching time vs. Collector current (typ.) VCC=600V, VGE=±15V, RG=2.2Ω, Tj=125°C Switching loss vs. Collector current (typ.)Switching time vs. Gate resistance (typ.) VCC=600V, IC=75A, VGE=±15V, Tj=125°C Switching time vs. Collector current (typ.) VCC=600V, VGE=±15V, RG=2.2Ω, Tj=150°C +VGE=15V, -VGE=15V, RG=2.2Ω, Tj=150°C VCC=600V, VGE=±15V, RG=2.2Ω, Tj=125, 150°C VCC=600V, IC=75A, VGE=±15V, Tj=125, 150°C Switching loss vs. Gate resistance (typ.) Collector current: IC [A] Switching time: ton, tr, toff, tf [nsec] Gate resistance: RG [Ω] Switching time: ton, tr, toff, tf [nsec] Collector-Emitter voltage: VCE [V] (Main terminals) Collector current: IC [A] Gate resistance: RG [Ω] Switching loss: Eon, Eoff, Err [mJ/pulse] Collector current: IC [A] Switching loss: Eon, Eoff, Err [mJ/pulse] Collector current: IC [A] Switching time: ton, tr, toff, tf [nsec]

IGBT Modules2MBI75VA-120-50 http://www.fujielectric.com/products/semiconductor/ 100 1000 0 100 200 0.001 0.01 0.1 0.001 0.01 0.1 1 FWD IGBT 100 120 140 160 0 1 2 3 125°C 150°C 100 1000 0 100 200 100 120 140 160 0 500 1000 1500 Pmax=75kW τ [sec] 0.0023 0.0301 0.0598 0.0708 Rth IGBT 0.04076 0.10334 0.14599 0.08991 [°C/W] FWD 0.06221 0.15773 0.22282 0.13724 Tj=125°C trr lrr trr lrr VCC=600V, VGE=±15V, RG=2.2Ω, Tj=150°C Transient Thermal Resistance (max.) Reverse Recovery Characteristics (typ.) VCC=600V, VGE=±15V, RG=2.2Ω, Tj=125°C Forward Current vs. Forward Voltage (typ.) chip Reverse Recovery Characteristics (typ.) Forward current: IF [A] Reverse recovery current: Irr [A] Reverse recovery time: trr [nsec] Pulse Width : Pw [sec] Thermal resistanse: Rth(j-c) [°C/W] Forward on voltage: VF [V] Forward current: IF [A] Forward current: IF [A] Reverse recovery current: Irr [A] Reverse recovery time: trr [nsec] FWD safe operating area (max.) Tj=150°C Collector-Emitter voltage: VCE [V] (Main terminals) Reverse recovery current: Irr [A]

http://www.fujielectric.com/products/semiconductor/ C2E1 C2E1 Outline Drawings, mm Equivalent Circuit Schematic

IGBT Modules2MBI75VA-120-50 http://www.fujielectric.com/products/semiconductor/ WARNING 1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of May 2011. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sur to obtain the latest specifications. 2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design failsafe, flame retardant, and free of malfunction. 4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements.

  • Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment
  • Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc. 5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty.
  • Transportation equipment (mounted on cars and ships) • Trunk communications equipment
  • Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature
  • Emergency equipment for responding to disasters and anti-burglary devices • Safety devices
  • Medical equipment 6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation).
  • Space equipment • Aeronautic equipment • Nuclear control equipment
  • Submarine repeater equipment 7. Copyright ©1996-2011 by Fuji Electric Co., Ltd. All rights reserved. No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd. 8. If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product. Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein.