2MBI75S-120_10 FUJI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 6
Technical content
IGBT MODULE (S series) 1200V / 75A / 2 in one package HiFeatures High speed switching Voltage drive Low Inductance module structure
Applications
AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines i Maximum Ratings and Characteristics @ Absolute Maximum Ratings (at Tc=25°C unless otherwise specified) Items Units Collector-Emitter voltage Ves P1200 Vv Gate-Emitter voltage Vers £20 Vv i contnucus Te=80°C Te=25°C Collector current A ie Collector power dissipation cr Ww Junction temperature Ti 150 °C Storage temperature Tstg ~40 to +125 °c isolation voltage (*1) v Mounting (°2) 35 , — reminats ©) [ss Note *4: All terminals should be connected together when isolation test will be done. Note '2: Recommendable value : 2.5-3.5 N-m (M5) @ Electrical characteristics (at Tj= 25°C unless otherwise specified) items Symbols [Conditions Units [min [typ [max | Zero gate voltage collector current flees [We = OV, Ver = 1200V [| - | - | 140 | ma Gate-Emitter leakage current lees [Mer = OV, Ve = #20V [= | = | 02 [ pA Gate-Emitter threshold voltage [eso [Ves = 20V, Ie = 75mA Vv Collector-Emitter saturation vottage eee fe input capacitance [Ces vs. = ov [| = | so00 | = | Output capacitance Coes Me = 10 - 1875 - pF Reverse transfer capacitance [Cres f= 1MHz | - | 1650 | - | [ = [035 [42 ] Turn-on time itr Nees Sov : 025 | 06 eo, [ot =} as : tof |e ian eo Turn-off time = [= [eos [03] Forward on voltage a = 28 3.0 Vv Reverse recovery time fire 75Q 035 Ts @ Thermal resistance characteristics dg eo ee oe ee ene Pee ete ae roe crores eccce er) GN@eetenslem ccc. yc: Items Symbols [Conditions Units ’ [min | typ. | max | A A ny (LGBT re ee ciel eleebiae tet a ee Contact thermal resistance Rihic-f) | with Thermal Compound (*3) [= | 005 | = | Note °3: This is the value which is defined mounting on the additional cooling fin with thermal compound.
@ Characteristics (Representative) Glector cwrent vs. Col lector-Bui iter vol tage Gollectur omrent vs, Col lector-Fai iter vol lume ‘eo T= BC typ.) ‘eo TH ABC typ.) 160 aos aa —-. Se ee — 160 }——___ + oe Os YORE 208) 16¥ Lav i ae) a “0 ae — | - +100 —— fj). - too F_— ~ af hf Z| toe iv 2 rf wf < a ) iL. a Of Bef ff i y i 3 0 ff _ oo a at. 4 JY. 4. ef af— - fr F >i ee ee fe ate fy fl 2 2 4 5 o r 2 a 1 5 Gollector fritter whinge = WE DV Collec tor ~ Hitter voltage : YE LVI Golletor current vs, Collector-Emi iter vol tage Gollector-Bniiter voltage vs. Gate-Emitter voltage V@AN tty.) Tj= BC typ.) 180 fo = : 3 a af J : sop oo Pf fd > Bmp fo Uf fo 2
5 T i Et) eee | ae
: I = a) a ee - 8 2 —— Je 754 | a] oe eel ree wp 4 fj 3 ° <1 o ° t 2 3 ‘ s 5 10 16 20 35 Collector - fmitter volte : YE [ ¥] Gate - Fmilier woltage von [¥] Gapacitance vs. Collectur-Emiiter voltam (typ.) Dymanic Gate charge (typ) V@=OVv, ff Miz, T= BC Veo=@W, Ic=7GA, T= 5 ‘5.0000 1000, 8 | | | F900 pf L a> bie 3 ~ i 2 é i 5 in | 8 0 t+ | - foe . or ae coor, s i z i or : EF Cre 3 g j gy 0 ep pe eg FA | 2 3 g | | 3 | 100 ° —— ° os 0 Ww o os % «6 o 200 100 a0 700 Gollec tor ~ finitter voltage © WE LVI Gate charge ae [1]
Switching time vs. Collector current (typ.) Switching time vs. Collector current (typ.) 1000 Veo=6007, YGE=+15V, Re= 16Q, Tj= 25°C. 1000 Veo=600V, YGE=+18V, Re= 16Q, Tj= 125°C -* _° st & § 30 30 Q a a eT) ° Pr a eT Collector current + Te [A] Collector current Te fa) Switching time vs, Gate resistance (typ.) Switching loss vs. Collector current (typ.) Veoc=600V, Tc-75A, VGE=+15V, Tj= 25°C Vee=600V, VGE=+16V, Rg=16Q. 000 0 ton _ Fon (25%) g wotf 3 [ i . : w 35 A : © seal fo | § i : Fa | pence g : W g Z| Za eof(1250) 3 ° VA cece > / a6 LA Pa erties) 2 10 | A Lo | 2 ToT ae 2 JF Ere @5C). ot ° Av t 10 100 300 o 0 4 6 80 100 120 140 Gate resistence : Rg [ Q] Collector current. Ie [al Switching loss vs. Gate resistance (typ.) Reverse bias safe operating area Voo=600V, Ie~75A, VGE=+15V, Tj- 125T +VGE=15V, -VGESL5V, Re2=16Q, TjS125T 60 200 3 |
5 LEE Lal a - 180
2 a0 : zg 100 7 i | 3 I ° : Err oLiik ° 1 0 100 500 0 200 400 600-600 1000 1200 1400 Gate resistance : Re (Q] Collector - Emitter voltage : ¥CE CY]
Forvard current. vs. Forward on voltage (typ) Reverse recovery characteristics (typ. ) Voc600V, VGE=+15V, Ry=16Q 10 500 i 160}. — T3425. THB | i i op fy [F | a | SE Puecesey | = woh a Al... oe | Stop Le a “onl — eres & ’ . : l Ew cee t FA : > 28 pH ft fa ee 3 \\ ge er @50) ° eA w ° 1 2 3 4 0 4 om 100 120 Formard on vol tage: Ww OE¥ ) Forward current 7 iF [A] Transieat thermal resistame zt vw z Zoo. 0. 06 a Eoo i é tea 0.001 0. 0.1 i Pulse width = Pw 7 se J
i Outline Drawings, mm Yours ing hele i ee) 16 i oe Helmer = [e7 wen [eed || | | es | | [esse ! game : 35 _lue type iermina.s_ Terminals {COMP No 110 equ valent) | | i lof “(E @ Equivalent Circuit Schematic Cl E2 | C2E1 | G1 El G2 E2
- This Catalog contains the product specifications, characteristics, data, materials, and structures as of October 2008. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications. 2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Device warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. Although Fuji Electric Device Technology Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty, It is recommended to make your design fail-safe, flame retardant, and free of malfunction. 4, The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. + Computers: + OA equipment + Communications equipment (terminal devices) + Measurement equipment + Machine tools + Audiovisual equipment + Electrical home appliances + Personal equipment + Industrial robots ete. 5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Device Technology Co. Ltd, to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji’s product incorporated in the equipment becomes faulty. + Transportation equipment (mounted on cars and ships) + Trunk cornmunications equipment * Traffic-signal control equipment + Gas leakage detectors with an auto-shut-off feature + Emergency equipment for responding to disasters and anti-burglary devices + Safety devices + Medical equipment 6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). * Space equipment + Aeronautic equipment + Nuclear control equipment + Submarine repeater equipment 7. Copyright ©1996-2008 by Fuji Electric Device Technology Co., Ltd. All rights reserved. No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Device Technology Co., Ltd. 8. Ifyou have any question about any portion in this Catalog, ask Fuji Electric Device Technology Co., Ltd. or its sales agents before using the product. Neither Fuji Electric Device Technology Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein