2MBI75S FUJI

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

IGBT MODULE ( S-Series ) IIII Features

  • NPT-Technology
  • Square SC SOA at 10 x IC
  • High Short Circuit Withstand-Capability
  • Small Temperature Dependence of the Turn-Off Switching Loss
  • Low Losses And Soft Switching IIII Applications
  • High Power Switching
  • A.C. Motor Controls
  • D.C. Motor Controls
  • Uninterruptible Power Supply IIII Outline Drawing IIII Maximum Ratings and Characteristics IIII Equivalent Circuit
  • Absolute Maximum Ratings ( Tc=25°C) Items Symbols Ratings Units Collector-Emitter Voltage V CES 1200 Gate -Emitter Voltage V GES ± 20 V Continuous 25°C / 80°C IC 100 / 75 Collector 1ms 25°C / 80°C IC PULSE 200 / 150 Current Continuous -I C 75 1ms -I C PULSE 150 A Max. Power Dissipation P C 600 W Operating Temperature T j +150 Storage Temperature T stg -40 ∼ +125 °C Isolation Voltage *1 A.C. 1min. V is 2500 V Mounting *2 3.5Screw Torque Terminals *2 3.5 Nm Note: 1*: All Terminals should be connected together when isolation test will be done. 2*: Recommendable Value; 2.5 ∼ 3.5 Nm (M5)
  • Electrical Characteristics ( at Tj=25°C ) Items Symbols Test Conditions Min. Typ. Max. Units Zero Gate Voltage Collector Current ICES VGE=0V VCE=1200V 1.0 mA Gate-Emitter Leackage Current IGES VCE=0V VGE=± 20V 200 nA Gate-Emitter Threshold Voltage VGE(th) VGE=20V IC=75mA 5.5 7.2 8.5 Tj = 25°C 2.3 2.6 VCollector-Emitter Saturation Voltage VCE(sat) VGE=15V IC=75A Tj =125°C 2.8 Input Capacitance Cies VGE=0V 9’000 Output Capacitance Coes VCE=10V 1’875 pF Reverse Transfer Capacitance Cres f=1MHz 1’650 tON VCC = 600V 0.35 1.2 Turn-on Time tr,x IC = 75A 0.25 0.6 tr,i VGE = ±15V 0.10 tOFF RG =1 6 Ω 0.45 1.0 Turn-off Time tf Inductive Load 0.08 0.3 µs Tj = 25°C 2.3 3.0Diode Forward On-Voltage VF IF=75A; VGE=0V Tj =125°C 2.0 V Reverse Recovery Time trr IF=75A 350 ns
  • Thermal Characteristics Items Symbols Test Conditions Min. Typ. Max. Units Rth(j-c) IGBT 0.21 Thermal Resistance Rth(j-c) Diode 0.47 °C/W Rth(c-f) With Thermal Compound 0.05

Specification is subject to change without notice September 2000