2MBI75N-120 FUJI

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

IGBT MODULE ( N series ) nn Features

  • Square RBSOA
  • Low Saturation Voltage
  • Less Total Power Dissipation
  • Improved FWD Characteristic
  • Minimized Internal Stray Inductance
  • Overcurrent Limiting Function (4~5 Times Rated Current) nn Applications
  • High Power Switching
  • A.C. Motor Controls
  • D.C. Motor Controls
  • Uninterruptible Power Supply nn Outline Drawing nn Maximum Ratings and Characteristics
  • Absolute Maximum Ratings ( T c =25°C ) Items Symbols Ratings Units Collector-Emitter Voltage V CES 1200 V Gate -Emitter Voltage V GES ± 20 V Continuous IC 75 Collector 1ms IC PULSE 150 Current Continuous -I C 75 1ms -I C PULSE 150 Max. Power Dissipation P C 600 W Operating Temperature T j +150 °C Storage Temperature T stg -40 ∼ +125 °C Isolation Voltage A.C. 1min. V is 2500 V Mounting *1 3.5 Terminals *2 3.5 Note: *1:Recommendable Value; 2.5 ∼ 3.5 Nm (M5)
  • Electrical Characteristics ( at T j=25°C ) Items Symbols Test Conditions Min. Typ. Max. Units Zero Gate Voltage Collector Current ICES V GE =0V V CE =1200V 1.0 mA Gate-Emitter Leackage Current IGES V CE =0V V GE = ± 20V 15 µ A Gate-Emitter Threshold Voltage V GE(th) V GE =20V I C =75mA 4.5 7.5 V Collector-Emitter Saturation Voltage V CE(sat) V GE =15V I C =75A 3.3 V Input capacitance C ies V GE =0V 12000 Output capacitance C oes V CE =10V 4350 pF Reverse Transfer capacitance C res f=1MHz 3870 tON V CC =600V 0.65 1.2 tr IC =75A 0.25 0.6 tOFF V GE = ± 15V 0.85 1.5 tf R G =16 Ω 0.35 0.5 Diode Forward On-Voltage V F IF =75A V GE =0V 3.0 V Reverse Recovery Time trr IF =75A 350 ns
  • Thermal Characteristics Items Symbols Test Conditions Min. Typ. Max. Units R th(j-c) IGBT 0.21 Thermal Resistance R th(j-c) Diode 0.47 °C/W R th(c-f) With Thermal Compound 0.05 nn Equivalent Circuit Screw Torque Turn-on Time Turn-off Time µ s A Nm

Switching time vs. Collector current V CC =600V, R G =16 Ω , V GE =±15V, T j=25°C Switching time : t on , t r, t off , t f [nsec] Collector current : I C [A] 0 1 2 3 4 5 100 125 150 175 V GE =20V, 15V, 12V, 10V, Collector-Emitter voltage : V CE [V] Collector current : I C [A] Collector current vs. Collector-Emitter voltage T j=125°C 0 1 2 3 4 5 100 125 150 175 Collector current vs. Collector-Emitter voltage T j=25°C Collector current : I C [A] Collector-Emitter voltage : V CE [V] V GE =20V, 15V, 12V, 10V 0 5 10 15 20 25 37.5A 75A 150A Collector-Emitter vs. Gate-Emitter voltage T j=25°C I C = Collector-Emitter voltage :V CE [V] Gate-Emitter voltage : V GE [V] 0 5 10 15 20 25 Collector-Emitter vs. Gate-Emitter voltage T j=125°C 37.5A 75A 150A I C = Collector-Emitter voltage V CE [V] Gate-Emitter voltage : V GE [V] 0 50 100 150 100 1000 Switching time vs. Collector current V CC =600V, R G =16 Ω , V GE =±15V, T j=125°C t f t r t on t off Switching time : t on , t r, t off , t f [nsec] Collector current : I C [A]

0,001 0,01 0,1 1 0,01 0,1 IGBT Diode Transient thermal resistance Thermal resistance : R th(j-c) [°C/W] Pulse width : PW [sec] 0 200 400 600 800 1000 200 400 600 800 1000 800V 600V V CC =400V Dynamic input characteristics T j=25°C Collector-Emitter voltage : V CE [V] Gate charge : Q G [nC] 10 100 100 1000 t f t r t off t on Switching time vs. R G V CC =600V, I C =75A, V GE =±15V, T j=25°C Switching time : t on , t r, t off , t f [nsec] Gate resistance : R G [ Ω ] 0 1 2 3 4 5 100 150 T j=125°C 25°C Forward current vs. Forward voltage V GE =OV Forward current : I F [A] Forward voltage : V F [V] 0 50 100 150 100 I rr 25°C t rr 25°C t rr 125°C I rr 125°C Reverse recovery characteristics t rr , I rr vs. I F Reverse recovery current : I rr [A] Reverse recovery time : t rr [nsec] Forward current : I F [A] 0 200 400 600 800 1000 1200 100 200 300 400 500 600 700 RBSOA (Repetitive pulse) SCSOA (non-repetitive pulse) Reversed biased safe operating area +V GE =15V, -V GE < 15V, T j< 125°C, R G > 16 Ω Collector current : I C [A] Collector-Emitter voltage : V CE [V]

0,1 C res C oes C ies Capacitance vs. Collector-Emitter voltage T j=25°C Capacitance : C ies , C oes , C res [nF] Collector-Emitter Voltage : V CE [V] 0 50 100 150 E rr 25°C E rr 125°C Switching loss vs. Collector current V CC =600V, R G =16 Ω , V GE =±15V Switching loss : E on , E off , E rr [mJ/cycle] Collector Current : I C [A] E on 25°C E on 125°C E off 25°C E off 125°C Fuji Electric GmbH Fuji Electric (UK) Ltd. Lyoner Straße 26 Commonwealth House

2 Chalkhill Road Hammersmith

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