2MBI600U4G-120 FUJI

Document overview

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Technical content

Features

Low Inductance module structure

Applications

AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25°C unless otherwise specified) Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Collector current Ic Continuous Tc=25°C 800 A Tc=80°C 600 Ic pulse 1ms Tc=25°C 1600 Tc=80°C 1200 -Ic 600 -Ic pulse 1ms 1200 Collector power dissipation Pc 1 device 3670 W Junction temperature Tj 150 °CStorage temperature Tstg -40 ~ +125 Isolation voltage Between terminal and copper base (*1) Viso AC : 1min. 4000 VAC Screw torque Mounting (*2) M6 5.75 N mTerminals (*3) M8 10 M4 2.5 Note *1: All terminals should be connected together when isolation test will be done. Note *2: Recommendable Value : Mounting 4.25~5.75 Nm (M6) Note *3: Recommendable Value : Main Terminals 8~10 Nm (M8) Sense Terminals 1.7~2.5 Nm (M4) Electrical characteristics (at Tj= 25°C unless otherwise specified) Items Symbols Conditions Characteristics Unitsmin. typ. max. Zero gate voltage collector current ICES VGE = 0V, VCE = 1200V - - 1.0 mA Gate-Emitter leakage current IGES VCE = 0V, VGE = ±20V - - 1200 nA Gate-Emitter threshold voltage VGE (th) VCE = 20V, IC = 600mA 5.5 6.5 7.5 V Collector-Emitter saturation voltage VCE (sat) (main terminal) VGE = 15V IC = 600A VTj=125°C - 2.28 - VCE (sat) (chip) Tj=125°C - 2.10 - Input capacitance Cies VCE = 10V, VGE = 0V, f = 1MHz - 68 - nF Turn-on ton VCC = 600V RGon = 6.8Ω IC = 600A RGoff = 2Ω VGE = ±15V Tj = 125ºC - 1.35 - µstr - 0.65 - Turn-off toff - 0.80 - tf - 0.20 - Forward on voltage VF (main terminal) VGE = 0V IF = 600A VTj=125°C - 1.93 - VF (chip) Tj=125°C - 1.75 - Reverse recovery trr IF = 600A - 0.45 - μs Lead resistance, terminal-chip (*4) R lead - 0.29 - mΩ Note *4: Biggest internal terminal resistance among arm. Thermal resistance characteristics Items Symbols Conditions Characteristics Unitsmin. typ. max. Thermal resistance (1device) Rth(j-c) IGBT - - 0.034 °C/WFWD - - 0.060 Contact thermal resistance (1device) Rth(c-f) with Thermal Compound (*5) - 0.006 - Note *5: This is the value which is defined mounting on the additional cooling fin with thermal compound.

IGBT Modules2MBI600U4G-120 http://www.fujielectric.com/products/semiconductor/ Characteristics (Representative) Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25°C Dynamic Gate charge (typ.) VCC=600V, IC=600A, Tj= 25°C Tj=25ºC,chip Tj=25ºC,chip VGE=+15V,chip Collector current vs. Collector-Emitter voltage (typ.) Collector current vs. Collector-Emitter voltage (typ.) Tj= 125°C, chip Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) 200 400 600 800 1000 1200 1400 Collector current : Ic [A] Collector-Emitter voltage : VCE [V] VGE=20V 15V 12V 10V 200 400 600 800 1000 1200 1400 Collector current : Ic [A] Collector-Emitter voltage : VCE [V] VGE=20V 15V 12V 10V 200 400 600 800 1000 1200 1400 Collector current : Ic [A] Collector-Emitter voltage : VCE [V] Tj=125°CTj=25°C 5 10 15 20 25 Collector - Emitter voltage : VCE [ V ] Gate - Emitter voltage : VGE [ V ] Ic=1200A Ic=600A Ic=300A 100 1000 0 10 20 30 Capacitance : Cies, Coes, Cres [ nF ] Collector-Emitter voltage : VCE [V] Cies Coes Cres 200 400 600 800 1000 0 500 1000 1500 2000 2500 3000 Gate charge : Qg [ nC ] Collector-Emitter voltage : VCE[V] Gate-Emitter voltage:VGE[V] VCE VGE

http://www.fujielectric.com/products/semiconductor/ Switching time vs. Gate resistance (typ.) Switching loss vs. Collector current (typ.) Vcc=600V, Ic=600A,VGE=±15V, Tj=125°C Switching loss vs. Gate resistance (typ.) Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, RGon=6.8Ω, RGoff=2Ω, Tj= 125°C ±VGE=15V ,Tj = 125°C / chip Vcc=600V, Ic=600A,VGE=±15V, Tj=125°C Reverse bias safe operating area (max.) Vcc=600V, VGE=±15V, RGon=6.8Ω, RGoff=2Ω, Tj= 125°C 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 200 400 600 800 1000 Switching time : ton, tr, toff, tf [ us ] Collector current : Ic [ A ] ton toff tf tr 0.0 1.0 2.0 3.0 4.0 5.0 6.0 0 4 8 12 16 20 24 28 32 36 Swtching time : ton, tr, toff, tf [ us ] Gate resistance : RG [ Ω ] tr tf toff ton 100 125 150 175 200 225 250 0 200 400 600 800 1000 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Collector current : Ic [ A ] , Forward current : IF [ A ] Eon Eoff Err 100 150 200 250 300 350 400 450 500 0 4 8 12 16 20 24 28 32 36 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Gate resistance : RG [ Ω ] Eoff Err Eon 200 400 600 800 1000 1200 1400 0 200 400 600 800 1000 1200 1400 Collector current : Ic [ A ] Collector - Emitter voltage : VCE [ V ]

IGBT Modules2MBI600U4G-120 http://www.fujielectric.com/products/semiconductor/ Transient thermal resistance (max.) Forward current vs. Forward on voltage (typ.) chip Vcc=600V, VGE=±15V, RG=6.8Ω, Tj=125ºC Reverse recovery characteristics (typ.) 200 400 600 800 1000 1200 1400 Forward current : IF [ A ] Forward on voltage : VF [ V ] Tj=25ºC Tj=125ºC 100 150 200 250 300 350 400 450 0 200 400 600 800 1000 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Reverse recovery time : trr [us] Reverse recovery current : Irr [ A ] Forward current : IF [ A ] trr Irr 0.001 0.010 0.100 1.000 0.001 0.010 0.100 1.000 Thermal resistanse : Rth(j-c) [ °C/W ] Pulse width : PW [ sec ] FWD IGBT

http://www.fujielectric.com/products/semiconductor/ Outline Drawings, mm Equivalent Circuit Schematic main emitter main collector gate sense emitter sense collector main emitter main collector sense collector sense emitter gate

IGBT Modules2MBI600U4G-120 http://www.fujielectric.com/products/semiconductor/ WARNING 1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of May 2011. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sur to obtain the latest specifications. 2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design failsafe, flame retardant, and free of malfunction. 4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements.

  • Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment
  • Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc. 5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty.
  • Transportation equipment (mounted on cars and ships) • Trunk communications equipment
  • Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature
  • Emergency equipment for responding to disasters and anti-burglary devices • Safety devices
  • Medical equipment 6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation).
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