2MBI600U2E-060 FUJI

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Features

  • High speed switching
  • Voltage drive
  • Low inductance module structure

Applications

  • Inverter for Motor drive
  • AC and DC Servo drive amplifier
  • Uninterruptible power supply
  • Industrial machines, such as Welding machines Maximum ratings and characteristics Absolute maximum ratings (at Tc=25°C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Turn-on time Turn-off time Forward on voltage Reverse recovery time Lead resistance, terminal-chip* ICES IGES VGE(th) VCE(sat) (terminal) V CE(sat) (chip) C ies ton tr tr(i) toff tf VF (terminal) V F (chip) t rr R lead – – 3.0 – – 600 6.2 6.7 7.7 – 2.15 2.45 – 2.40 – – 1.85 – – 2.10 – –4 3 – – 0.40 1.20 – 0.22 0.60 – 0.16 – – 0.48 1.20 – 0.07 0.45 – 1.90 2.30 – 1.95 – – 1.60 – – 1.65 – – – 0.35 – 0.45 – VGE=0V, VCE=600V VCE=0V, VGE=±20V VCE=20V, IC=600mA VGE=15V, IC=600A VCE=10V, VGE=0V, f=1MHz VCC=300V IC=600A VGE=±15V RG= 4.7 Ω VGE=0V IF=600A IF=600A mA nA V V nF µs V µs mΩ Electrical characteristics (at Tj=25°C unless otherwise specified) Thermal resistance characteristics Thermal resistance Contact Thermal resistance – – 0.052 – – 0.086 – 0.0167 – IGBT FWD With thermal compound °C/W °C/W °C/W Equivalent Circuit Schematic *1 : All terminals should be connected together when isolation test will be done. *2 : Recommendable value : Mounting 2.5 to 3.5N·m(M5 or M6), Terminal 3.5 to 4.5 N·m(M6) Symbols Conditions Characteristics Unit Min. Typ. Max. Rth(j-c) Rth(j-c) Rth(c-f)* IGBT Module U-Series *4 : This is the value which is defined mounting on the additional cooling fin with thermal compound. Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C *3:Biggest internal terminal resistance among arm. Items Symbols Conditions Characteristics Unit Min. Typ. Max. Item Symbol Collector-Emitter voltage V CES Gate-Emitter voltage V GES Collector current I C ICp -IC -IC pulse Collector Power Dissipation P C Junction temperature T j Storage temperature T stg Isolation voltage between terminal and copper base *1 V iso Screw Torque Mounting * 2 Terminals *2 Rating 650 ±20 600 1200 600 1200 2400 +150 -40 to +125 2500 3.5 4.5 Unit V V A W VAC N·m Conditions Continuous 1ms 1 device AC:1min.

2MBI600U2E-060 IGBT Module Characteristics (Representative) Vcc=300V, Ic=600A, Tj= 25°C Collector current vs. Collector-Emitter voltage (typ.) Tj= 125°C / chip Capacitance vs. Collector-Emitter voltage (typ.) Dynamic Gate charge (typ.) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip Tj=25°C / chip Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) 200 400 600 800 1000 1200 1400 012345 Collector current : Ic [A] Collector-Emitter voltage : VCE [V] VGE=20V 15V 12V 10V 200 400 600 800 1000 1200 1400 012345 Collector current : Ic [A] Collector-Emitter voltage : VCE [V] VGE=20V 15V 12V 10V 200 400 600 800 1000 1200 1400 01234 Collector current : Ic [A] Collector-Emitter voltage : VCE [V] Tj=125°CTj=25°C 5 1 01 52 02 5 Collector - Emitter voltage : VCE [ V ] Gate - Emitter voltage : VGE [ V ] Ic=1200A Ic=600A Ic=300A 0.1 1.0 10.0 100.0 01 0 2 0 3 0 Capacitance : Cies, Coes, Cres [ nF ] Collector-Emitter voltage : VCE [V] Cies Coes Cres 0 500 1000 1500 2000 2500 Collector-Emitter voltage : VCE [ 200V/div ] Gate - Emitter voltage : VGE [ 5V/div ] Gate charge : Qg [ nC ] VGE VCE

2MBI600U2E-060 IGBT Module Vcc=300V, Ic=600A, VGE=±15V, Tj= 125°C Reverse bias safe operating area (max.)Switching loss vs. Gate resistance (typ.) +VGE=15V,-VGE <= 15V, RG >= 4.7Ω ,Tj <= 125°C Switching time vs. Collector current (typ .) Vcc=300V, VGE=±15V, Rg=4.7Ω , Tj= 25°C Vcc=300V, Ic=600A, VGE=±15V, Tj= 25°C Switching time vs. Collector current (typ .) Vcc=300V, VGE=±15V, Rg=4.7Ω , Tj=125°C Switching time vs. Gate resistance (typ.) Switching loss vs. Collector current (typ.) Vcc=300V, VGE=±15V, Rg=4.7Ω 100 1000 10000 0 200 400 600 800 1000 Switching time : ton, tr, toff, tf [ nsec ] tr tf toff ton 100 1000 10000 0 200 400 600 800 1000 Switching time : ton, tr, toff, tf [ nsec ] tr tf toff ton 100 1000 10000 1.0 10.0 100.0 Switching time : ton, tr, toff, tf [ nsec ] tr tftoff ton 0 400 800 1200 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Eon(125°C) Eon(25°C) Eoff(125°C) Err(125°C) Err(25°C) Eoff(25°C) 1.0 10.0 100.0 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Eoff Err Eon 400 800 1200 0 200 400 600 800 Collector current : Ic [ A ]

2MBI600U2E-060 IGBT Module Outline Drawings, mm M247 a Transient thermal resistance (max.) Reverse recovery characteristics (typ.) Vcc=300V, VGE=±15V, Rg=4.7Ω a Forward current vs. Forward on voltage (typ.) chip 200 400 600 800 1000 1200 1400 0123 Forward current : IF [ A ] Forward on voltage : VF [ V ] Tj=125°CTj=25°C 100 1000 0 400 800 1200 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] Forward current : IF [ A ] Irr (125°C) Irr (25°C) trr (125°C) trr (25°C) 0.001 0.010 0.100 1.000 0.001 0.010 0.100 1.000 Thermal resistanse : Rth(j-c) [ °C/W ] Pulse width : Pw [ sec ] FWD IGBT