2MBI450VN-120-50 FUJI

Document overview

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Technical content

Features

Low Inductance module structure

Applications

AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25 °C unless otherwise specified) Items Symbols Conditions Maximum ratings Units Inverter Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Collector current Ic Continuous Tc=80°C 450 AIc pulse 1ms Tc=80°C 900 -Ic 450 -Ic pulse 1ms 900 Collector power dissipation Pc 1 device 2270 W Junction temperature Tj 175 °COperating junction temperature (under switching conditions) Tjop 150 Case temperature TC 125 Storage temperature Tstg -40 to +125 Isolation voltage between terminal and copper base (*1) Viso AC : 1min. 2500 VACbetween thermi stor and others (*2) Screw torque Mounting (*3) - 3.5 N mTerminals (*4) 4.5 Note *1: All terminals should be connected together during the test. Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test. Note *3: Recommendable value : Mounting : 2.5-3.5 Nm (M5) Note *4: Recommendable value : Terminals : 3.5-4.5 Nm (M6) Electrical characteristics (at Tj= 25°C unless otherwise specified) Items Symbols Conditions Characteristics Unitsmin. typ. max. Inverter Zero gate voltage collector current ICES VGE = 0V, VCE = 1200V - - 3.0 mA Gate-Emitter leakage current IGES VCE = 0V, VGE = ±20V - - 600 nA Gate-Emitter threshold voltage VGE (th) VCE = 20V, IC = 450mA 6.0 6.5 7.0 V Collector-Emitter saturation voltage VCE (sat) (terminal) VGE = 15V IC = 450A V Tj=125°C - 2.65 - Tj=150°C - 2.70 - VCE (sat) (chip) Tj=125°C - 2.05 - Tj=150°C - 2.10 - Input capacitance Cies VCE = 10V, VGE = 0V, f = 1MHz - 41 - nF Turn-on time ton VCC = 600V IC = 450A VGE = ±15V RG = 0.52Ω - 550 1200 nsec tr - 180 600 tr (i) - 120 - Turn-off time toff - 1050 2000 tf - 110 350 Forward on voltage VF (terminal) VGE = 0V IF = 450A V Tj=125°C - 2.45 - Tj=150°C - 2.40 - VF (chip) Tj=125°C - 1.85 - Tj=150°C - 1.80 - Reverse recovery time trr IF = 450A - 200 600 nsec Thermistor Resistance R T=25°C - 5000 - ΩT=100°C 465 495 520 B value B T=25/50°C 3305 3375 3450 K Thermal resistance characteristics Items Symbols Conditions Characteristics Unitsmin. typ. max. Thermal resistance (1device) Rth(j-c) Inverter IGBT - - 0.066 °C/WInverter FWD - - 0.100 Contact thermal resistance (1device) (*5) Rth(c-f) with Thermal Compound - 0.0167 - Note *5: This is the value which is defined mounting on the additional cooling fin with thermal compound.

Characteristics (Representative) Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj= 25°C / chip Gate Capacitance vs. Collector-Emitter Voltage (typ.) Vge= 0V, ƒ= 1MHz, Tj= 25°C Dynamic Gate Charge (typ.) Vcc=600V, Ic=450A, Tj= 25°C [INVERTER] [INVERTER] [INVERTER] [INVERTER] [INVERTER] [INVERTER] Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip Collector current vs. Collector-Emitter voltage (typ.) Tj= 150°C / chip Collector current vs. Collector-Emitter voltage (typ.) Vge= 15V / chip 100 1000 Collector-Emitter voltage: Vce [V] Gate Capacitance: Cies, Coes, Cres [nF] Cies Cres Coes 200 400 600 800 1000 0 1 2 3 4 5 Collector-Emitter voltage: Vce [V] Collector current: Ic [A] Vge=20V 15V 12V 10V 200 400 600 800 1000 0 1 2 3 4 5 Collector-Emitter voltage: Vce [V] Collector current: Ic [A] Vge= 20V 12V 15V 10V 200 400 600 800 1000 0 1 2 3 4 5 Collector-Emitter Voltage: Vce [V] Collector Current: Ic [A] Tj=25°C 125°C 150°C 5 10 15 20 25 Gate-Emitter Voltage: Vge [V] Collector-Emitter Voltage: Vce [V] Ic=900A Ic=450A Ic=225A 0 1000 2000 3000 4000 5000 6000 Gate charge: Qg [nC] Collector-Emitter voltage: Vce [200V/div] Gate-Emitter voltage: Vge [5V/div] Vce Vge 0 5 10 15 20 25 30

IGBT Modules2MBI450VN-120-50 Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=450A, Vge=±15V, Tj=125°C, 150°C Switching time vs. Collector current (typ.) Vcc=600V, Vge=±15V, Rg=0.52Ω, Tj=125°C, 150°CVcc=600V, Vge=±15V, Rg=0.52Ω, Tj=25°C Reverse bias safe operating area (max.) +Vge=15V, -Vge=15V, Rg=0.52Ω, Tj=150°C Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=450A, Vge=±15V, Tj=125°C, 150°C Switching loss vs. Collector current (typ.) Vcc=600, Vge=±15V, Rg=0.52Ω, Tj=125°C, 150°C Switching time vs. Collector current (typ.) [INVERTER] [INVERTER] [INVERTER] [INVERTER] [INVERTER] [INVERTER] 100 1000 10000 0 200 400 600 800 1000 Collector current: Ic [A] Switching time: ton, tr, toff, tf [nsec] tf tr toff ton 100 1000 10000 0 200 400 600 800 1000 Collector current: Ic [A] Switching time: ton, tr, toff, tf [nsec] tf tr toff ton Tj=125oC Tj=150oC 100 1000 10000 0.1 1 10 100 Gate resistance: Rg [Ω] Switching time: ton, tr, toff, tf [nsec] tf tr toff tonTj=125oC Tj=150oC 100 150 0 200 400 600 800 1000 Collector current: Ic [A] Switching loss: Eon, Eoff, Err [mJ/pulse] Eon Eoff Err Tj=125oC Tj=150oC 100 150 200 250 0 1 10 100 Gate resistance: Rg [Ω] Switching loss: Eon, Eoff, Err [mJ/pulse] Eoff Err Eon Tj=125oC Tj=150oC 200 400 600 800 1000 1200 1400 0 500 1000 1500 Collector-Emitter voltage: Vce [V] Collector current: Ic [A]

Temperature characteristic (typ.) [INVERTER] [INVERTER] Transient Thermal Resistance (max.) [INVERTER] Forward Current vs. Forward Voltage (typ.) chip [THERMISTOR] Reverse Recovery Characteristics (typ.) Vcc=600V, Vge=±15V, Rg=0.52Ω, Tj=125°C, 150°C Reverse Recovery Characteristics (typ.) Vcc=600V, Vge=±15V, Rg=0.52Ω, Tj=25°C 200 400 600 800 1000 0 1 2 3 Forward on voltage: Vf [V] Forward current: If [A] 125°C Tj=25°C 150°C 100 1000 10000 0 200 400 600 800 1000 Forward current: If [A] Reverse recovery current: Irr [A] Reverse recovery time: trr [nsec] Irr trr 0.001 0.01 0.1 0.001 0.01 0.1 1 Pulse Width : Pw [sec] Thermal resistanse: Rth(j-c) [°C/W] *** FWD IGBT 0.1 100 -60 -40 -20 0 20 40 60 80 100 120 140 160 Temperature [°C] Resistance : R [kΩ] 100 1000 10000 0 200 400 600 800 1000 Forward current: If [A] Reverse recovery current: Irr [A] Reverse recovery time: trr [nsec] Irr trr Tj=125oC Tj=150oC

IGBT Modules2MBI450VN-120-50 Equivalent Circuit Schematic PN OUT Outline Drawings, mm [ Inverter ] N C P OUT [ Thermistor ]

2MBI450VN-120-50 IGBT Modules WARNING 1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of October 2008. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications. 2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Device warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. Although Fuji Electric Device Technology Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction. 4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements.

  • Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment
  • Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc. 5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Device Technology Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty.
  • Transportation equipment (mounted on cars and ships) • Trunk communications equipment
  • Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature
  • Emergency equipment for responding to disasters and anti-burglary devices • Safety devices
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