2MBI450VH-120-50 FUJI

Document overview

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Technical content

Features

Low Inductance module structure

Applications

AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25°C unless otherwise specified) Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Collector current Ic Continuous Tc=100°C 450 A Tc=25°C 520 Ic pulse 1ms 900 -Ic 450 -Ic pulse 1ms 900 Collector power dissipation Pc 1 device 2400 W Junction temperature Tj 175 °COperating junction temperature (under switching conditions) Tjop 150 Case temperature TC 125 Storage temperature Tstg -40 ~ +125 Isolation voltage Between terminal and copper base (*1) Viso AC : 1min. 2500 VAC Screw torque Mounting (*2) - 6.0 N mTerminals (*3) 5.0 Note *1: All terminals should be connected together during the test. Note *2: Recommendable Value : 3.0-6.0 Nm (M5 or M6) Note *3: Recommendable Value : 2.5-5.0 Nm (M6) Electrical characteristics (at Tj= 25°C unless otherwise specified) Items Symbols Conditions Characteristics Unitsmin. typ. max. Zero gate voltage collector current ICES VGE = 0V, VCE = 1200V - - 2.0 mA Gate-Emitter leakage current IGES VCE = 0V, VGE = ±20V - - 400 nA Gate-Emitter threshold voltage VGE (th) VCE = 20V, IC = 450mA 6.0 6.5 7.0 V Collector-Emitter saturation voltage VCE (sat) (terminal) VGE = 15V IC = 450A V Tj=125°C - 2.45 - Tj=150°C - 2.50 - VCE (sat) (chip) Tj=125°C - 2.15 - Tj=150°C - 2.20 - Input capacitance Cies VCE = 10V, VGE = 0V, f = 1MHz - 36 - nF Turn-on time ton VCC = 600V LS = 30nH IC = 450A VGE = ±15V RG = 1Ω Tj = 150°C - 0.60 - µs tr - 0.20 - tr (i) - 0.05 - Turn-off time toff - 0.80 - tf - 0.08 - Forward on voltage VF (terminal) VGE = 0V IF = 450A V Tj=125°C - 2.15 - Tj=150°C - 2.10 - VF (chip) Tj=125°C - 1.90 - Tj=150°C - 1.85 - Reverse recovery time trr IF = 450A, Tj=150ºC - 0.15 - µs Thermal resistance characteristics Items Symbols Conditions Characteristics Unitsmin. typ. max. Thermal resistance (1device) Rth(j-c) Inverter IGBT - - 0.062 °C/WInverter FWD - - 0.110 Contact thermal resistance (1device) (*4) Rth(c-f) with Thermal Compound - 0.0125 - Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.

IGBT Modules2MBI450VH-120-50 http://www.fujielectric.com/products/semiconductor/ Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip Collector current vs. Collector-Emitter voltage (typ.) Tj= 150°C / chip Collector current vs. Collector-Emitter voltage (typ.) VGE= 15V / chip Gate Capacitance vs. Collector-Emitter Voltage (typ.) VGE= 0V, ƒ= 1MHz, Tj= 25°C Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj= 25°C / chip Dynamic Gate Charge (typ.) Vcc=600V, Ic=450A, Tj= 25°C 100 0 10 20 30 Collector-Emitter voltage: VCE [V] Gate Capacitance: Cies, Coes, Cres [nF] *** Cies Coes Cres 100 200 300 400 500 600 700 800 900 1000 0 1 2 3 4 5 Collector-Emitter voltage: V CE [V] Collector current: Ic [A] VGE=20V 15V 12V 10V 100 200 300 400 500 600 700 800 900 1000 0 1 2 3 4 5 Collector-Emitter voltage: V CE [V] Collector current: Ic [A] VGE= 20V 15V 12V 10V 100 200 300 400 500 600 700 800 900 1000 0 1 2 3 4 5 Collector-Emitter Voltage: V CE [V] Collector Current: Ic [A] 125°CTj=25°C 150°C 5 10 15 20 25 Gate-Emitter Voltage: V GE [V] Collector-Emitter Voltage: VCE [V] Ic=900A Ic=450A Ic=225A 0 1000 2000 3000 4000 5000 Gate charge: Qg [nC] Collector-Emitter voltage: VCE [200V/div] Gate-Emitter voltage: VGE [5V/div] VGE VCE

http://www.fujielectric.com/products/semiconductor/ Reverse bias safe operating area (max.) +VGE=15V, -VGE=15V, RG=1Ω, Tj=150°C Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=450A, VGE=±15V, Tj=125°C Switching loss vs. Collector current (typ.) Vcc=600V, VGE=±15V, RG=1Ω, Tj=125°C, 150°C Switching time vs. Collector current (typ.)Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, RG=1Ω, Tj=125°C Vcc=600V, VGE=±15V, Rg=1Ω, Tj=150°C Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=450A, VGE=±15V, Tj=125°C, 150°C 100 1000 10000 0 200 400 600 800 1000 Collector current: Ic [A] Switching time: ton, tr, toff, tf [nsec] toffton tr tf 100 1000 10000 0 200 400 600 800 1000 Collector current: Ic [A] Switching time: ton, tr, toff, tf [nsec] toff ton tr tf 100 1000 10000 0.1 1 10 100 Gate resistance: RG [Ω] Switching time: ton, tr, toff, tf [nsec] toff ton tr tf 100 0 200 400 600 800 1000 Collector current: Ic [A] Switching loss: Eon, Eoff, Err [mJ/pulse] Eon Eoff Err Tj=125oC Tj=150oC 100 150 200 0 1 10 100 Gate resistance: RG [Ω] Switching loss: Eon, Eoff, Err [mJ/pulse] Eoff Err Eon Tj=125oC Tj=150oC 100 200 300 400 500 600 700 800 900 1000 0 500 1000 1500 Collector-Emitter voltage: V CE [V] Collector current: Ic [A]

IGBT Modules2MBI450VH-120-50 http://www.fujielectric.com/products/semiconductor/ Reverse Recovery Characteristics (typ.) Vcc=600V, VGE=±15V, RG=1Ω, Tj=150°C Reverse Recovery Characteristics (typ.) Vcc=600V, VGE=±15V, RG=1Ω, Tj=125°C Transient Thermal Resistance (max.) Forward Current vs. Forward Voltage (typ.) chip Forward current: IF [A] Reverse recovery current: Irr [A] Reverse recovery time: trr [nsec] Pulse Width : PW [sec] Thermal resistanse: Rth(j-c) [°C/W] *** Forward current: IF [A] Reverse recovery current: Irr [A] Reverse recovery time: trr [nsec] 100 200 300 400 500 600 700 800 900 1000 0 1 2 3 Forward on voltage: V F [V] Forward current: IF [A] 125°C Tj=25°C 150°C 100 1000 10000 0 200 400 600 800 1000 Irr trr 100 1000 10000 0 200 400 600 800 1000 Irr trr 0.001 0.01 0.1 0.001 0.01 0.1 1 FWD IGBT

http://www.fujielectric.com/products/semiconductor/ C2E1 Outline Drawings, mm Equivalent Circuit Schematic

IGBT Modules2MBI450VH-120-50 http://www.fujielectric.com/products/semiconductor/ WARNING 1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of May 2011. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sur to obtain the latest specifications. 2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design failsafe, flame retardant, and free of malfunction. 4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements.

  • Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment
  • Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc. 5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty.
  • Transportation equipment (mounted on cars and ships) • Trunk communications equipment
  • Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature
  • Emergency equipment for responding to disasters and anti-burglary devices • Safety devices
  • Medical equipment 6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation).
  • Space equipment • Aeronautic equipment • Nuclear control equipment
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