2MBI300NT-120-02 FUJI

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Device Name : IGBT module Type Name : 2HBI 300NT-120 -02 e332 23325 Babs 388s seers gece EgSe2 Fuji Electric Co.,Ltd. Matsumoto Factory | Fu Electic Contd | ont ka 77a Aoage ___1it Electric : [veel Feb, -2 “YB Marte ak :| MS5F 3939 == : H04-004-07

Date | fication Ind. Content date Drawn | Checked | Approved fa.2.4 = | lee | | ta : PS/t f—r-18.'97| Revision | & | Rewas gote bias veIngy 7 Rola B Mouse SE, Esae Z&3 23 ERTEs SPE3e a | | Ff] s fl Fuji Electric Co,Ltd g|MS5§F3939 3, H04-004-06

2MBI300NT—-120-02 1. Outline Drawing Unit : mm i 7, 8 7, 6 {ti tl Ie i Hts ets rE \\ VA . 2eise 93t02z ‘ 4-065 SEess vos! 23255 Tite 3M6 naive G test) Prrre TePTOES 238i Qa Qa | 4 ee . TF —- f 3833? g 2. Equivalent circuit C2E1 —=+ E2 aa) Glo oD 62B * NLU (Over Current Limiting Circuit) Fuji Electric Co_Lid. 2| MS5F3939 xu FH: 104-004-083

. 3. Absolute Maximum Ratings ( at Tc=25°C unless otherwise specified ) lCollector-fmitter voltage | Vers | 1200 TV Gate-Enitter witage | ves | =20 | V] [_ Continous [te | 300 Collector [ims | Ie pulse | 600 current {| te 300 [ie ie pulse 00 J lMax. power dissipation | PC_— | ast Screw torque pee at fag a Note : +1 Recommendable value : 2.5~3.5.N-m (M5) or (M6) . #2 Reconmendable value : 3.5~4.5.N-m (36) 4. Electrical characteristics (at Tj=25°C unless otherwise specified) Items | Symbols Conditions Units sure ete ey eS] sai Zero gate voltage | | oe Voe=1200¥ mA a3 5 23 Collector current |_| S3i8g Gate-Emitter leakage (=| | IF VcE=0V, VoE== 20V HA Hate voltage st rg z saturation voltage zesie [input capacitance | Cies | [52000 | WWce=0v E3335 [output capacitance | Coes | | 21000 | vce=10v 223 ae capacitance

23922 Turn-on time [ton fT 12 Wree=6o0v

[tr [0.25 [0.6 Ftc=300a ES Turn-off time | torf [| [| [1.5 |Wce=t15v Diode forward on VF | 34 fr Vce=0V v [Reverse recovery time [err [ [| 350 [Ir-300a_ ns | er capability RG=1.2Q 5. Thermal resistance characteristics Items Symbols Conditions thits POP re ey Pn] 058 es Thermal resistance [Ren(j-e) | [0.135 diode | 3X This is the value which is defined mounting on the additional cooling fin with thermal compound. aaa”) eeweanen) 4, ee os aot ~ ta S MS tl Fuji Electric Cs.lid. g 5F3939 4, E-C04-03

T— 7 po eyo LS rs \\ua Ke, \\__Plase of mewtestechy icode) 7. Applicable category (@ASSS) This specification is applied to IGBT module named 2¥BI300NT-120-02. BRAGRER BIS 72-1 2MBI300NT—120-0 2EATS. 8. Storege and trensportation notes (RB, EMLOZEBR +The IGBT module should be stored at a standard temperature of 5 to 35°C and humidity of 45 to 75%. BERESBELW. (5~35'C, 45~75%) * Store modules in a place with few temperature changes in order to avoid condensation on the module surface. SEE BERBRRLORE LL. (S7%=—ARMHRELAWIL) zes5 . * Avoid exposure to corrosive geses and dust. ae? ie BREN ADRES, BROSVSRIREIS—O 2, zesse + Avoid excessive external force on the module. = 5r2s RakPeGhPSAWLIK+REBTSOL, ” 2333 + Store modules with unprocessed terminals. £3935 SVa—-NOBFRRMLIORACREFS OL. EZTEE -Do not drop or otherwise shock the modules when transporting. Tr 2Erig RROEMSCRRESALY,. EFSEROLAWISL, Z0s2s pies 2533? ; 222 9. Heat sink mounting notes (c —bY> “7 ROG LOZ SED azz: +The mounting surface of the heat sink should bé’finished to a roughness of 10m or less and a varp between screw holes of 100m or less. RIV a-NERY TI SHBRKORABOHLTIZ, BK10p eV, BART ; THHEE100y DAF ETS, ‘ *Each mounting screw should be fastened using a specified torque efter pre- fastening using 2 1/3 specified torque. RTA, REO/30 7 TREC ORE. REO hI CHBEROTE ey + If the above notes are not met, it has a possibility to break the insulation between the IGBT module's chips and metal base. - ERE RS RO RBA CHBALKBS. IBIS a—-A OF ySLERX<—A2MO CRRREETS MEERH VET, @ 10. Revers gate bias voltage (4°-} <A 726) @ -Recommendable value of the revers gate bias voltage : ~7V(typ.), —5V(min.) RG=27.Q Fo bBA 7 ABEORIRA = -7V(typ.), -5V ain.) RG“2TA @ ‘The revers gate bias voltage means the voltage between the gate terminal and the auxiliary emitter termina] of the modules. GbR TABEL, FV s2—-NOF— bet LBM. y PRFMOBETHS, si Tat + : = i Fuji Electric Co,Ltd. 2| MS 5 F 3939 oh H04-004-03

Tjerse Yenas'¢ | i i " yeteton gy, aor watenonssrisy, or ! 600 : u - : 00 7 : = : j i i i = i i i i ¥ 400 u - 7 7 E400 ; - 7 - : : i FA Y = { | : fy = i i = 200 ty 3200 7 > ; - 2 y i j j i | | i i i i H . ° H ! H i ° 1 2 3 * 3 ° 1 2 3 « 5 Collector-Eeizzer voltage > YZE [Y) Sollestor-Exizzer veltere : YE [Y} Seitening time vs, Collector current Switching time es. Collector curreat ——— z — = | i = i 3 00 1000 [—— us — = rds 2 == a a = oS: gtsz : a B ai ¥. jo 7 A fi —_— > PE?iS |] 50 f- SS S—= os as OO

2 Ee EL SSS ————

Hii) 2 Sooo Oe 2522: ’ t 10 - u 2 ZBeis o 200 400 600 ° 209 «0 c 3835? Solbeczor current : le (A) Collector current : te [AY rg22t S22: Switching loss vs. Collector current Sapacitence vs. Solleczar-imizzer velzare ., EERE Yees7O0Y, R6e1.20 . VEtes18V/-5Y Tets'¢

155 H A t T T H 7 T 7 + 7

z i i I i Ett 135°c] “S00 —_ : i i i : a i i f = H i Hi = 17 1 j Fy 7 7 ee = | i I é i { i i : : i i £1 i i E FJ | i i se T 3 : i i i | i 3

2 Bettas 3 | { i i ; cree I

° 100 200=S—CSOSCOS*~SOSSC*~OCg S10 SSCS tollester current 21s tA} Colbestor—teizzer Vorzape : WEE IV, ees r= see a | Fuji Electric Colic. 3| MS5F3939 Y= ° Bl 7 ee ee

. Switching tive ve. AG Dynamic input characteristics Yee=600¥, 1c=300A, YGE==15¥, Tj=28°C Tas z i . : cet ton f= ggg OO NE

1000 LL ig i i i |

= pout a : ob fd S | { i { fi : 2 z l i = 7 Hi T L { i : 2 % 100 LH. i = i fi [ i i i i = {aS LID LSL III pS a i i i i i 1 (oI i L i | I i 1 10 0-500 2000 2500 3000 3500 40b0 Gate resistance : RG (2) Gate chore + Oe (nC) Forvard current vs. Forvard voltage Reverse recovery characteriazics vee=0¥ ter, Ine vs. IF SEER i Tisias'¢ 25°C) | 1 ee >a ? . i ge2se] | | | l nes | , Mer assaa] = i i i i ye 7 1as'¢ 3283 | | | | ed j i ZSEPE | 2 400 1 fa dE i we f2235 | = i i Se i | g2522) = | : | ae | i tre e2s82] § | i i 7 | - se 2552s] = 1 | i z2 i t -ERFEE | | | i 33, : BEEZ | 5 200 : f ee Eid alt gigas fl | i fe i e5sgs | | i g2 [ocr i BSEse ‘ i i a | nn 33323 | | | cS ne EEg2S ° = 28355 ° 1 2 3 ‘ 3 o 200 400 600 23ei: Forward voltage : VF (¥] Forward current : $F iA) Reversed biased safe operezing area Transient thermal resistence *YGENISY, -YGESISY. T)S125°C, REZ2.7O 3000 5 ~ ——T ~ 7 Diode 2500 : bo - Sere L i i { H 4 = oa en od 1 i | | q i = TTL mld +4 = 2000 Yscson | t 5 2 oan cy et : L | Gnon-repetitive pulse) | 4 : Se eee TIEEE= ¥ 1000 ee ee Sen Se ee on neh | . “RBSOA CRapetitive pulse) | 0.001 ° - L 0.001 0.01 0.1 1 o 200 400, 600 800 4000, 1200 Pulse width : PM [sec] Collector-Emitter voltage : We [¥) g al oe coon = Fuji Electric Co,Lid. $ MS5F3939 = Fa |—| i NEISD4-03