2MBI200VB-120-50 FUJI

Document overview

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Technical content

Features

Low Inductance module structure

Applications

AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at T C=25°C unless otherwise specified) Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Collector current IC Continuous TC=100°C 200 IC pulse 1ms 400 -IC 200 -IC pulse 1ms 400 Collector power dissipation PC 1 device 1500 W Junction temperature Tj 175 °COperating junction temperature (under switching conditions) Tjop 150 Case temperature TC 125 Storage temperature Tstg -40 ~ 125 Isolation voltage between terminal and copper base (*1) Viso AC : 1min. 2500 VAC Screw torque Mounting (*2) - 3.5 N mTerminals (*3) - 3.5 Note *1: All terminals should be connected together during the test. Note *2: Recommendable Value : 2.5-3.5 Nm (M5 or M6) Note *3: Recommendable Value : 2.5-3.5 Nm (M5) Electrical characteristics (at T j= 25°C unless otherwise specified) Items Symbols Conditions Characteristics Unitsmin. typ. max. Zero gate voltage collector current ICES VGE = 0V, VCE = 1200V - - 2.0 mA Gate-Emitter leakage current IGES VCE = 0V, VGE = ±20V - - 400 nA Gate-Emitter threshold voltage VGE (th) VCE = 20V, IC = 200mA 6.0 6.5 7.0 V Collector-Emitter saturation voltage VCE (sat) (terminal) VGE = 15V IC = 200A V Tj=125°C - 2.25 - Tj=150°C 2.30 VCE (sat) (chip) VGE = 15V IC = 200A Tj=125°C - 2.05 - Tj=150°C 2.1 Internal gate resistance RG (int) - - 3.8 - Ω Input capacitance Cies VCE = 10V, VGE = 0V, f = 1MHz - 18.2 - nF Turn-on time ton VCC = 600V IC = 200A VGE = ±15V RG = 2.7Ω Tj = 150°C - 600 - nsec tr - 200 - tr (i) - 50 - Turn-off time toff - 800 - tf - 80 - Forward on voltage VF (terminal) VGE = 0V IF = 200A V Tj=125°C - 2.00 - Tj=150°C 1.95 VF (chip) VGE = 0V IF = 200A Tj=125°C - 1.85 - Tj=150°C 1.80 Reverse recovery time trr IF = 200A - 150 - nsec Thermal resistance characteristics Items Symbols Conditions Characteristics Unitsmin. typ. max. Thermal resistance (1device) Rth(j-c) IGBT - - 0.100 °C/WFWD - - 0.160 Contact thermal resistance (1device) (*4) Rth(c-f) with Thermal Compound - 0.025 - Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.

IGBT Modules2MBI200VB-120-50 http://www.fujielectric.com/products/semiconductor/ Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj= 150°C / chip Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25°C / chip Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip Collector current vs. Collector-Emitter voltage (typ.) VCC=600V, IC=200A, Tj= 25°C Gate Capacitance vs. Collector-Emitter Voltage Dynamic Gate Charge (typ.) VGE= 0V, ƒ= 1MHz, Tj= 25°C VGE= 15V / chip 100 200 300 400 500 0 1 2 3 4 Collector-Emitter Voltage: VCE [V] Collector Current: IC [A] 125°CTj=25°C 150°C 5 10 15 20 25 Gate-Emitter Voltage: VGE [V] Collector-Emitter Voltage: VCE [V] IC=400A IC=200A IC=100A 100 200 300 400 500 0 1 2 3 4 5 Collector-Emitter voltage: VCE [V] Collector current: IC [A] VGE=20V 15V 12V 10V 100 200 300 400 500 0 1 2 3 4 5 Collector-Emitter voltage: V CE [V] Collector current: IC [A] VGE= 20V 15V 12V 10V 0.1 100 0 10 20 30 Collector-Emitter voltage: VCE [V] Gate Capacitance: Cies, Coes, Cres [nF] *** Cies Coes Cres -20 -15 -10 -2 -1 0 1 2 Gate charge: Q g [ μC] Gate-Emitter voltage: VGE [V] -800 -600 -400 -200 200 400 600 800 Collector-Emitter voltage: VCE [V] VGE VCE

http://www.fujielectric.com/products/semiconductor/ Reverse bias safe operating area (max.) Switching time vs. Collector current (typ.) VCC=600V, VGE=±15V, RG=2.7Ω, Tj=125°C Switching loss vs. Collector current (typ.)Switching time vs. Gate resistance (typ.) VCC=600V, IC=200A, VGE=±15V, Tj=125°C Switching time vs. Collector current (typ.) VCC=600V, VGE=±15V, RG=2.7Ω, Tj=150°C +VGE=15V, -VGE=15V, RG=2.7Ω, Tj=150°C VCC=600, VGE=±15V, RG=2.7Ω, Tj=125, 150°C VCC=600V, IC=200A, VGE=±15V, Tj=125, 150°C Switching loss vs. Gate resistance (typ.) 100 1000 10000 0 100 200 300 400 500 Collector current: IC [A] Switching time: ton, tr, toff, tf [nsec] toff ton tr tf 100 1000 10000 1 10 100 Gate resistance: RG [Ω] Switching time: ton, tr, toff, tf [nsec] toff ton tr tf 100 200 300 400 500 0 400 800 1200 1600 Collector-Emitter voltage: V CE [V] (Main terminals) Collector current: IC [A] 1 10 100 Gate resistance: RG [Ω] Switching loss: Eon, Eoff, Err [mJ/pulse] Eoff Err Eon Tj=125°C Tj=150°C 0 100 200 300 400 500 Collector current: IC [A] Switching loss: Eon, Eoff, Err [mJ/pulse] Eon Eoff Err Tj=125°C Tj=150°C 100 1000 10000 0 100 200 300 400 500 Collector current: IC [A] Switching time: ton, tr, toff, tf [nsec] toff ton tr tf

IGBT Modules2MBI200VB-120-50 http://www.fujielectric.com/products/semiconductor/ VCC=600V, VGE=±15V, RG=2.7Ω, Tj=150°C Transient Thermal Resistance (max.) Reverse Recovery Characteristics (typ.) VCC=600V, VGE=±15V, RG=2.7Ω, Tj=125°C Forward Current vs. Forward Voltage (typ.) chip Reverse Recovery Characteristics (typ.) FWD safe operating area (max.) Tj=150°C 100 1000 0 100 200 300 400 500 Forward current: IF [A] Reverse recovery current: Irr [A] Reverse recovery time: trr [nsec] trr Irr 0.001 0.01 0.1 0.001 0.01 0.1 1 Pulse Width : Pw [sec] Thermal resistanse: Rth(j-c) [°C/W] *** FWD IGBT 100 200 300 400 500 0 1 2 3 Forward on voltage: V F [V] Forward current: IF [A] 125°C Tj=25°C 150°C 100 1000 0 100 200 300 400 500 Forward current: IF [A] Reverse recovery current: Irr [A] Reverse recovery time: trr [nsec] trr Irr 100 200 300 400 500 0 500 1000 1500 Collector-Emitter voltage: VCE [V] (Main terminals) Reverse recovery current: Irr [A] Pmax=240kW τ(i) [sec] 0.001 0.019 0.050 0.063 Rth(i) IGBT 0.00940 0.02235 0.03855 0.02991 [°C/W] FWD 0.01504 0.03576 0.06168 0.04786

http://www.fujielectric.com/products/semiconductor/ C2E1 C2E1 Outline Drawings, mm Equivalent Circuit Schematic

IGBT Modules2MBI200VB-120-50 http://www.fujielectric.com/products/semiconductor/ WARNING 1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of May 2011. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sur to obtain the latest specifications. 2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design failsafe, flame retardant, and free of malfunction. 4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements.

  • Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment
  • Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc. 5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty.
  • Transportation equipment (mounted on cars and ships) • Trunk communications equipment
  • Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature
  • Emergency equipment for responding to disasters and anti-burglary devices • Safety devices
  • Medical equipment 6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation).
  • Space equipment • Aeronautic equipment • Nuclear control equipment
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