2MBI200UC-120 ETC1

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Features

  • High speed switching
  • Voltage drive
  • Low inductance module structure

Applications

  • Inverter for Motor drive
  • AC and DC Servo drive amplifier
  • Uninterruptible power supply
  • Industrial machines, such as Welding machines Maximum ratings and characteristics Absolute maximum ratings (at Tc=25°C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Turn-on time Turn-off time Forward on voltage Reverse recovery time Lead resistance, terminal-chip*3 I CES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) C ies ton tr tr(i) toff tf VF (terminal) V F (chip) t rr R lead – – 2.0 – – 400 4.5 6.5 8.5 – 1.85 2.20 – 2.10 – – 1.75 2.10 – 2.00 – –2 2 – – 0.36 1.20 – 0.21 0.60 – 0.03 – – 0.37 1.00 – 0.07 0.30 – 1.70 2.00 – 1.80 – – 1.60 1.90 – 1.70 – – – 0.35 – 0.53 – VGE=0V, VCE=1200V VCE=0V, VGE=±20V VCE=20V, IC=200mA VGE=15V, IC=200A VCE=10V, VGE=0V, f=1MHz VCC=600V IC=200A VGE=±15V RG=3 Ω VGE=0V IF=200A IF=200A mA nA V V nF µs V µs mΩ Electrical characteristics (at Tj=25°C unless otherwise specified) Thermal resistance characteristics Thermal resistance Contact Thermal resistance – – 0.12 – – 0.20 – 0.025 – IGBT FWD With thermal compound °C/W °C/W °C/W Equivalent Circuit Schematic *1 : All terminals should be connected together when isolation test will be done. *2 : Recommendable value : Mounting 2.5 to 3.5 N·m(M5 or M6), Terminals 3.5 to 4.5N·m(M6) Symbols Conditions Characteristics Unit Min. Typ. Max. Rth(j-c) Rth(j-c) Rth(c-f)* IGBT Module U-Series *4 : This is the value which is defined mounting on the additional cooling fin with thermal compound. G1 E1 G2 E2 C2E1 Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C *3:Biggest internal terminal resistance among arm. Items Symbols Conditions Characteristics Unit Min. Typ. Max. Item Symbol Collector-Emitter voltage V CES Gate-Emitter voltaga V GES Collector current I C ICp -IC -IC pulse Collector Power Dissipation P C Junction temperature T j Storage temperature T stg Isolation voltage between terminal and copper base *1 V iso Screw Torque Mounting * 2 Terminals *2 Rating 1200 ±20 300 200 600 400 200 400 1040 +150 -40 to +125 2500 3.5 4.5 Unit V V A W VAC N·m Conditions Continuous 1ms 1 device AC:1min. Tc=25°C Tc=80°C Tc=25°C Tc=80°C

Characteristics (Representative) VGE=0V, f= 1MHz, Tj= 25°C Vcc=600Vɼ Ic=200AɼTj= 25°C Collector current vs. Collector-Emitter voltage (typ.) Collector-Emitter voltag e vs. Gate-Emitter voltag e (typ.) Tj= 125°C / chip Capacitance vs. Collector-Emitter voltage (typ.) Dynamic Gate charge (typ.) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip Tj=25°C / chip 100 200 300 400 500 012345 Collector current : Ic [A] Collector-Emitter voltage : VCE [V] V G E=20V 15V 12V 10V 100 200 300 400 500 012345 Collector current : Ic [A] Collector-Emitter voltage : V CE [V ] V G E=20V 15V 12V 10V 100 200 300 400 500 012345 Collector current : Ic [A] Collector-Emitter voltage : VCE [V] Tj= 125° CTj= 25° C 5 1 01 52 02 5 Collector - Emitter voltage : VCE [ V ] Gat e - Em it t er v o lt age : VGE [ V ] Ic=400A Ic=200A Ic=100A 0.1 1.0 10.0 100.0 01 0 2 0 3 0 Capacitance : Cies, Coes, Cres [ nF ] Collector-Emitter voltage : VCE [V] Cies Coes Cres 0 300 600 900 1200 Collector-Emitter voltage : VCE [ 200V/div ] Gate - Emitter voltage : VGE [ 5V/div ] G ate charge : Qg [ nC ] VGE VCE

Vcc=600V, Ic=200A, VGE=±15V, Tj= 125°C Reverse bias safe operating area (max.) Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=3Ω, Tj= 25°C Vcc=600V, Ic=200A, VGE=±15V, Tj= 25°C Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=3Ω, Tj=125°C Switching time vs. Gate resistance (typ.) Switching loss vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=3Ω Switching loss vs. Gate resistance (typ.) +VGE=15V,-VGE <= 15V, RG >= 3Ω ,Tj <= 125°C 100 1000 10000 0 100 200 300 400 Switching time : ton, tr, toff, tf [ nsec ] Collector current : Ic [ A ] ton toff tr tf 100 1000 10000 0 100 200 300 400 Switching time : ton, tr, toff, tf [ nsec ] Collector current : Ic [ A ] toff ton tr tf 100 1000 10000 1.0 10.0 100.0 Switching time : ton, tr, toff, tf [ nsec ] Gate resistance : Rg [ Ω ] tr tf toff ton 0 100 200 300 400 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Collector current : Ic [ A ] Eon(125°C) Eon(25°C) Eoff(125° Err(125°C) Err(25°C) Eoff(25°C) 100 150 1.0 10.0 100.0 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Gate resistance : Rg [ Ω ] Eoff Err Eon 100 200 300 400 500 0 400 800 1200 Collector current : Ic [ A ] Collector - Emitter voltage : VCE [ V ]

Outline Drawings, mm M234 Transient thermal resistance (max.) Reverse recovery characteristics (typ.) Vcc=600V, VGE=±15V, Rg=3Ω Forward current vs. Forward on voltage (typ.) chip 100 200 300 400 500 01234 Forward current : IF [ A ] Forward on voltage : VF [ V ] Tj=125°C Tj=25°C 100 1000 0 100 200 300 400 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] Forward current : IF [ A ] Irr (125°C) Irr (25°C) trr (125°C) trr (25°C) 0.001 0.010 0.100 1.000 0.001 0.010 0.100 1.000 Thermal resistanse : Rth(j-c) [ °C/W ] Pulse width : Pw [ sec ] FWD IGBT