2MBI200UC-120 FUJI

Document overview

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Technical content

Features

Low Inductance module structure

Applications

AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25 °C unless otherwise specified) Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Collector current Ic Continuous Tc=25°C 300 A Tc=80°C 200 Ic pulse 1ms Tc=25°C 600 Tc=80°C 400 -Ic 200 -Ic pulse 400 Collector power dissipation Pc 1 device 1040 W Junction temperature Tj 150 °C Storage temperature Tstg -40 to +125 °C Isolation voltage Between terminal and copper base (*1) Viso AC : 1min. 2500 VAC Screw torque Mounting (*2) 3.5 N·mTerminals (*2) 4.5 Note *1: All terminals should be connected together when isolation test will be done. Note *2: Recommendable value : Mounting : 2.5-3.5 N·m (M5 or M6), Terminals : 3.5-4.5 N·m (M6) Electrical characteristics (at Tj= 25°C unless otherwise specified) Items Symbols Conditions Characteristics Unitsmin. typ. max. Zero gate voltage collector current ICES VGE = 0V, VCE = 1200V - - 2.0 mA Gate-Emitter leakage current IGES VCE = 0V, VGE = ±20V - - 400 nA Gate-Emitter threshold voltage VGE (th) VCE = 20V, IC = 200mA 4.5 6.5 8.5 V Collector-Emitter saturation voltage VCE (sat) (teminal) VGE = 15V IC = 200A VTj=125°C - 2.10 - VCE (sat) (chip) Tj=125°C - 2.00 - Input capacitance Cies VGE = 0V, VCE = 10V, f = 1MHz - 22 - nF Turn-on time ton VCC = 600V IC = 200A VGE = ±15V RG = 3Ω - 0.36 1.20 µs tr - 0.21 0.60 tr (i) - 0.03 - Turn-off time toff - 0.37 1.00 tf - 0.07 0.30 Forward on voltage VF (teminal) VGE = 0V IF = 200A VTj=125°C - 1.80 - VF (chip) Tj=125°C - 1.70 - Reverse recovery time trr IF = 200A - - 0.35 µs Lead resistance, terminal-chip (*3) R lead - 0.53 - mΩ Note *3: Biggest internal terminal resistance among arm. Thermal resistance characteristics Items Symbols Conditions Characteristics Unitsmin. typ. max. Thermal resistance (1device) Rth(j-c) IGBT - - 0.12 °C/WFWD - - 0.20 Contact thermal resistance Rth(c-f) with Thermal Compound (*4) - 0.025 - Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.

Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj= 125°C / chip Dynamic Gate charge (typ.) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25°C / chip Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25°C Vcc=600V, Ic=200A, Tj= 25°C 100 200 300 400 500 0 1 2 3 4 5 Collector current : Ic [A] Collector-Emitter voltage : VCE [V] VGE=20V 15V 12V 10V 100 200 300 400 500 0 1 2 3 4 5 Collector current : Ic [A] Collector-Emitter voltage : VCE [V] VGE=20V 15V 12V 10V 100 200 300 400 500 0 1 2 3 4 5 Collector current : Ic [A] Collector-Emitter voltage : VCE [V] Tj=125°CTj=25°C 5 10 15 20 25 Collector - Emitter voltage : VCE [ V ] Gate - Emitter voltage : VGE [ V ] Ic=400A Ic=200A Ic=100A 0.1 1.0 10.0 100.0 0 10 20 30 Capacitance : Cies, Coes, Cres [ nF ] Collector-Emitter voltage : VCE [V] Cies Coes Cres 0 300 600 900 1200 Collector-Emitter voltage : VCE [ 200V/div ] Gate - Emitter voltage : VGE [ 5V/div ] Gate charge : Qg [ nC ] VGE VCE

Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=3Ω, Tj= 25°C Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=3Ω, Tj=125°C Vcc=600V, Ic=200A, VGE=±15V, Tj= 25°C Switching time vs. Gate resistance (typ.) Switching loss vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=3Ω Vcc=600V, Ic=200A, VGE=±15V, Tj= 125°C Switching loss vs. Gate resistance (typ.) Reverse bias safe operating area (max.) +VGE=15V,-VGE <= 15V, RG >= 3Ω ,Tj <= 125°C 100 1000 10000 0 100 200 300 400 Switching time : ton, tr, toff, tf [ nsec ] Collector current : Ic [ A ] ton toff tr tf 100 1000 10000 0 100 200 300 400 Switching time : ton, tr, toff, tf [ nsec ] Collector current : Ic [ A ] toff ton tr tf 100 1000 10000 1.0 10.0 100.0 Switching time : ton, tr, toff, tf [ nsec ] Gate resistance : Rg [ Ω ] tr tf toff ton 0 100 200 300 400 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Collector current : Ic [ A ] Eon(125°C) Eon(25°C) Eoff(125°C) Err(125°C) Err(25°C) Eoff(25°C) 100 150 1.0 10.0 100.0 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Gate resistance : Rg [ Ω ] Eoff Err Eon 100 200 300 400 500 0 400 800 1200 Collector current : Ic [ A ] Collector - Emitter voltage : VCE [ V ]

Transient thermal resistance (max.) Reverse recovery characteristics (typ.) Vcc=600V, VGE=±15V, Rg=3Ω Forward current vs. Forward on voltage (typ.) chip 100 200 300 400 500 0 1 2 3 4 Forward current : IF [ A ] Forward on voltage : VF [ V ] Tj=125°C Tj=25°C 100 1000 0 100 200 300 400 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] Forward current : IF [ A ] Irr (125°C) Irr (25°C) trr (125°C) trr (25°C) 0.001 0.010 0.100 1.000 0.001 0.010 0.100 1.000 Thermal resistanse : Rth(j-c) [ °C/W ] Pulse width : Pw [ sec ] FWD IGBT

Equivalent Circuit Schematic Outline Drawings, mm H04-004-03 13MS5F 5485 3 2MBI200UC-120 2. Equivalent circuit 1. Outline Drawing ( Unit : mm )

  1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of October 2008. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications. 2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Device warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. Although Fuji Electric Device Technology Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction. 4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements.
  • Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment
  • Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc. 5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Device Technology Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty.
  • Transportation equipment (mounted on cars and ships) • Trunk communications equipment
  • Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature
  • Emergency equipment for responding to disasters and anti-burglary devices • Safety devices
  • Medical equipment 6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation).
  • Space equipment • Aeronautic equipment • Nuclear control equipment
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