2MBI200U2A-060_0409 FUJI

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Features

  • High speed switching
  • Voltage drive
  • Low inductance module structure

Applications

  • Inverter for Motor drive
  • AC and DC Servo drive amplifier
  • Uninterruptible power supply
  • Industrial machines, such as Welding machines Maximum ratings and characteristics Absolute maximum ratings (at Tc=25°C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Turn-on time Turn-off time Forward on voltage Reverse recovery time Lead resistance, terminal-chip* ICES IGES VGE(th) VCE(sat) (terminal) V CE(sat) (chip) C ies ton tr tr(i) toff tf VF (terminal) V F (chip) t rr R lead – – 1.0 – – 200 6.2 6.7 7.7 – 2.15 2.45 – 2.40 – – 1.85 – – 2.10 – –1 4 – – 0.40 1.20 – 0.22 0.60 – 0.16 – – 0.48 1.20 – 0.07 0.45 – 1.90 2.30 – 1.95 – – 1.60 – – 1.65 – – – 0.35 – 1.39 – VGE=0V, VCE=600V VCE=0V, VGE=±20V VCE=20V, IC=200mA VGE=15V, IC=200A VCE=10V, VGE=0V, f=1MHz VCC=300V IC=200A VGE=±15V RG= 16 Ω VGE=0V IF=200A IF=200A mA nA V V nF µs V µs mΩ Electrical characteristics (at Tj=25°C unless otherwise specified) Thermal resistance characteristics Thermal resistance Contact Thermal resistance – – 0.19 – – 0.32 – 0.05 – IGBT FWD With thermal compound °C/W °C/W °C/W Equivalent Circuit Schematic *1 : All terminals should be connected together when isolation test will be done. *2 : Recommendable value : Mounting 2.5 to 3.5N·m(M5), Terminal 2.5 to 3.5 N·m(M5) Symbols Conditions Characteristics Unit Min. Typ. Max. Rth(j-c) Rth(j-c) Rth(c-f)* IGBT Module U-Series *4 : This is the value which is defined mounting on the additional cooling fin with thermal compound. Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C *3:Biggest internal terminal resistance among arm. Items Symbols Conditions Characteristics Unit Min. Typ. Max. Item Symbol Collector-Emitter voltage V CES Gate-Emitter voltage V GES Collector current I C ICp -IC -IC pulse Collector Power Dissipation P C Junction temperature T j Storage temperature T stg Isolation voltage between terminal and copper base *1 V iso Screw Torque Mounting * 2 Terminals *2 Rating 600 ±20 200 400 200 400 660 +150 -40 to +125 2500 3.5 3.5 Unit V V A W VAC N·m Conditions Continuous 1ms 1 device AC:1min.

2MBI200U2A-060 IGBT Module Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj= 125°C / chip Capacitance vs. Collector-Emitter voltage (typ.) Dynamic Gate charge (typ.) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip Tj=25°C / chip Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Vcc=300V, Ic=200A, Tj= 25°C 100 200 300 400 500 012345 Collector current : Ic [A] Collector-Emitter voltage : VCE [V] VGE=20V 15V 12V 10V 100 200 300 400 500 012345 Collector current : Ic [A] Collector-Emitter voltage : VCE [V] VGE=20V 15V 12V 10V 100 200 300 400 500 012345 Collector current : Ic [A] Collector-Emitter voltage : VCE [V] Tj=125°CTj=25°C 5 1 01 52 02 5 Collector - Emitter voltage : VCE [ V ] Gate - Emitter voltage : VGE [ V ] Ic=400A Ic=200A Ic=100A 0.1 1.0 10.0 100.0 01 0 2 0 3 0 Capacitance : Cies, Coes, Cres [ nF ] Collector-Emitter voltage : VCE [V] Cies Coes Cres 0 200 400 600 800 Collector-Emitter voltage : VCE [ 100V/div ] Gate - Emitter voltage : VGE [ 5V/div ] Gate charge : Qg [ nC ] VGE VCE

2MBI200U2A-060 IGBT Module Vcc=300V, Ic=200A, VGE=±15V, Tj= 125°C Reverse bias safe operating area (max.) Switching time vs. Collector current (typ.) Vcc=300V, VGE=±15V, Rg=16Ω , Tj= 25°C Vcc=300V, Ic=200A, VGE=±15V, Tj= 25°C Switching time vs. Collector current (typ.) Vcc=300V, VGE=±15V, Rg=16Ω , Tj=125°C Switching time vs. Gate resistance (typ.) Switching loss vs. Collector current (typ.) Vcc=300V, VGE=±15V, Rg=16Ω Switching loss vs. Gate resistance (typ.) +VGE=15V,-VGE <= 15V, RG >= 16Ω ,Tj <= 125°C 100 1000 10000 0 100 200 300 400 Switching time : ton, tr, toff, tf [ nsec ] Collector current : Ic [ A ] tr tf toff ton 100 1000 10000 0 100 200 300 400 Switching time : ton, tr, toff, tf [ nsec ] Collector current : Ic [ A ] tr tf toff ton 100 1000 10000 1.0 10.0 100.0 Switching time : ton, tr, toff, tf [ nsec ] Gate resistance : Rg [ Ω ] tr tf toff ton 0 100 200 300 400 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Collector current : Ic [ A ] Eon(125°C) Eon(25°C) Eoff(125°C) Err(125°C) Err(25°C) Eoff(25°C) 1.0 10.0 100.0 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Gate resistance : Rg [ Ω ] Eoff Err Eon 100 200 300 400 500 0 200 400 600 800 Collector current : Ic [ A ] Collector - Emitter voltage : VCE [ V ]

2MBI200U2A-060 IGBT Module Outline Drawings, mm M232 Transient thermal resistance (max.) Reverse recovery characteristics (typ.) Vcc=300V, VGE=±15V, Rg=16Ω a Forward current vs. Forward on voltage (typ.) chip 100 200 300 400 500 0123 Forward current : IF [ A ] Forward on voltage : VF [ V ] Tj=125°C Tj=25 °C 100 1000 0 100 200 300 400 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] Forward current : IF [ A ] Irr (125°C) Irr (25°C) trr (125°C) trr (25°C) 0.001 0.010 0.100 1.000 0.001 0.010 0.100 1.000 Thermal resistanse : Rth(j-c) [ °C /W ] Pulse width : Pw [ sec ] FWD IGBT