2MBI200S-120 FUJI

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Features

  • High speed switching
  • Voltage drive
  • Low inductance module structure

Applications

  • Inverter for Motor drive
  • AC and DC Servo drive amplifier
  • Uninterruptible power supply
  • Industrial machines, such as Welding machines Thermal resistance characteristics Thermal resistance – – 0.085 – – 0.18 – 0.025 – IGBT Diode the base to cooling fin °C/W °C/W °C/W *2 : This is the value which is defined mounting on the additional cooling fin with thermal compound Equivalent Circuit Schematic G1 E1 G2 E2 C1 E2 C2E1 Item Symbol Characteristics Conditions Unit Min. Typ. Max. Rth(j-c) Rth(j-c) Rth(c-f)* Maximum ratings and characteristics Absolute maximum ratings (at Tc=25°C unless otherwise specified) Item Symbol Collector-Emitter voltage V CES Gate-Emitter voltaga V GES Collector Continuous Tc=25°C I C current T c=80°C 1ms Tc=25°C IC pulse Tc=80°C C 1ms -I C pulse Max. power dissipation P C Operating temperature T j Storage temperature T stg Isolation voltage *1 Vis Screw torque Mounting * 2 Terminals *2 Rating 1200 ±20 300 200 600 400 200 400 1500 +150 -40 to +125 AC 2500 (1min. ) 3.5 4.5 Unit V V A A A A A A W V N·m N·m *1 : Aii terminals should be connected together when isolation test will be done *2 : Recommendable value : Mounting 2.5 to 3.5 N·m(M5 or M6) Terminals 3.5 to 4.5 N·m(M6) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Forward on voltage Reverse recovery time I CES IGES VGE(th) VCE(sat) Cies Coes Cres ton tr tr(i) toff tf VF trr – – 1.0 – – 0.4 5.5 7.2 8.5 – 2.3 2.6 – 2.8 – – 24000 – – 5000 – – 4400 – – 0.35 1.2 – 0.25 0.6 – 0.1 – – 0.45 1.0 – 0.08 0.3 – 2.3 3.0 – 2.0 – – – 0.35 VGE=0V, VCE=1200V VCE=0V, VGE=±20V VCE=20V, IC=200mA Tc=25° C VGE=15V, IC=200A Tc=125°C V GE=0V VCE=10V f=1MHz V CC=600V IC=200A VGE=±15V RG=4.7 ohm Tj=25°C IF=200A, VGE=0V Tj=125°C I F=200A mA µA V V pF µs V µs Electrical characteristics (at Tj=25°C unless otherwise specified) Symbol Characteristics Conditions Unit Min. Typ. Max.

Characteristics (Representative) 012345 100 200 300 400 500 10V 12V15VVGE= 20V Collector current vs. Collector-Emiiter voltage Tj= 25°C (typ.) Collector current : Ic [ A ] Collector - Emitter voltage : VCE [ V ] 012345 100 200 300 400 500 10V 12V15VVGE= 20V Collector current vs. Collector-Emiiter voltage Tj= 125°C (typ.) Collector - Emitter voltage : VCE [ V ] Collector current : Ic [ A ] 012345 100 200 300 400 500 Tj= 25°C Tj= 125°C Collector current vs. Collector-Emiiter voltage VGE=15V (typ.) Collector - Emitter voltage : VCE [ V ] Collector current : Ic [ A ] 5 1 01 52 02 5 Ic=100A Ic= 200A Ic= 400A Collector-Emiiter voltage vs. Gate-Emitter voltage Tj= 25°C (typ.) Collector - Emitter voltage : VCE [ V ] Gate - Emitter voltage : VGE [ V ] 0 5 10 15 20 25 30 35 500 1000 5000 10000 100000 Capacitance vs. Collector-Emiiter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25°C Capacitance : Cies, Coes, Cres [ pF ] Collector - Emitter voltage : VCE [ V ] Coes Cres Cies 0 500 1000 1500 2000 200 400 600 800 1000 Dynamic Gate charge (typ.) Vcc=600V, Ic=200A, Tj= 25°C Gate charge : Qg [ nC ] Collector - Emitter voltage : VCE [ V ] Gate - Emitter voltage : VGE [ V ]

Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg= 4.7ohm, Tj= 25°C Switching time : ton, tr, toff, tf [ nsec ] Collector current : Ic [ A ] 0 100 200 300 100 500 1000 tf tr ton toff Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg= 4.7ohm, Tj= 125°C Collector current : Ic [ A ] Switching time : ton, tr, toff, tf [ nsec ] 1 10 100 100 500 1000 5000 toff ton tr tf Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=200A, VGE=±15V, Tj= 25°C Gate resistance : Rg [ohm] Switching time : ton, tr, toff, tf [ nsec ] 0 100 200 300 400 Err(25°C) Eoff(25°C) Eon(25°C) Err(125°C) Eoff(125°C) Eon(125°C) Switching loss vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=4.7ohm Switching loss : Eon, Eoff, Err [ mJ/pulse ] Collector current : Ic [ A ] 1 10 100 120 160 Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=200A, VGE=±15V, Tj= 125°C Switching loss : Eon, Eoff, Err [ mJ/pulse ] Gate resistance : Rg [ohm] Eon Err Eoff 0 200 400 600 800 1000 1200 1400 100 150 200 250 300 350 400 450 Reverse bias safe operating area +VGE=15V, -VGE=<15V, Rg=>4.7ohm, Tj=<125°C Collector - Emitter voltage : VCE [ V ] Collector current : Ic [ A ]

Outline Drawings, mm mass : 370g 01234 100 200 300 400 500 Tj=25°CTj=125°C Forward current vs. Forward on voltage (typ.) Forward current : IF [ A ] Forward on voltage : VF [ V ] 0 100 200 300 100 500 Irr(125°C) Irr(25°C) trr(25°C) trr(125°C) Reverse recovery characteristics (typ.) Vcc=600V, VGE=±15V, Rg=4.7ohm Forward current : IF [ A ] Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] 0.001 0.01 0.1 1 1E-3 0.01 0.05 0.1 Transient thermal resistance Thermal resistanse : Rth(j-c) [ °C/W ] Pulse width : Pw [ sec ] FWD IGBT