2MBI200P-140 FUJI

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 5

Technical content

IGBT MODULE ( P-Series ) nn Features

  • Square SC SOA at 10 x I C
  • Simplified Parallel Connection
  • Narrow Distribution of Characteristics
  • High Short Circuit Withstand-Capability nn Applications
  • High Power Switching
  • A.C. Motor Controls
  • D.C. Motor Controls
  • Uninterruptible Power Supply nn Outline Drawing nn Maximum Ratings and Characteristics nn Equivalent Circuit
  • Absolute Maximum Ratings ( T c =25°C ) Items Symbols Ratings Units Collector-Emitter Voltage V CES 1400 V Gate -Emitter Voltage V GES ± 20 V Continuous TC=25°C 300 Continuous TC=80°C 200 Collector 1ms TC=25°C 600 Current 1ms TC=80°C 400 -I C 200 1ms -I C PULSE 400 Max. Power Dissipation P C 1500 W Operating Temperature T j +150 °C Storage Temperature T stg -40 ∼ +125 °C Isolation Voltage A.C. 1min. V is 2500 V Mounting *1 3.5 Terminals *2 4.5 Note: *1:Recommendable Value; 2.5 ∼ 3.5 Nm (M5) or (M6) *2:Recommendable Value; 3.5 ∼ 4.5 Nm (M6)
  • Electrical Characteristics ( at T j=25°C ) Items Symbols Test Conditions Min. Typ. Max. Units Zero Gate Voltage Collector Current ICES V GE =0V V CE =1400V 2.0 mA Gate-Emitter Leackage Current IGES V CE =0V V GE = ± 20V 400 µ A Gate-Emitter Threshold Voltage V GE(th) V GE =20V I C =200mA 6.0 8.0 9.0 V T j= 25°C V GE =15V I C =200A 2.7 3.0 T j=125°C V GE =15V I C =200A 3.3 Input capacitance C ies V GE =0V 20000 Output capacitance C o es V CE =10V 3000 pF Reverse Transfer capacitance C res f=1MHz 1300 tON V CC =600V 1.2 tr IC =200A 0.6 tOFF V GE = ± 15V 1.0 tf R G =4.7 Ω 0.3 Diode Forward On-Voltage V F IF =200A V GE =0V 2.4 3.3 V Reverse Recovery Time trr IF =200A 350 ns
  • Thermal Characteristics Items Symbols Test Conditions Min. Typ. Max. Units R th(j-c) IGBT 0.085 Thermal Resistance R th(j-c) Diode 0.180 °C/W R th(c-f) With Thermal Compound 0.025 Screw Torque V CE(sat)Collector-Emitter Saturation Voltage Turn-on Time Turn-off Time V µ s IC IC PU LSE A Nm

15VV GE =20V Collector Current vs. Collector-Emitter Voltage T j=25°C Collector Current : I C [A] Collector-Emitter Voltage : V CE [V] 0 1 2 3 4 5 6 100 200 300 400 500 10V 11V 12V 15VV GE =20V Collector Current vs. Collector-Emitter Voltage T j=125°C Collector Current : I C [A] Collector-Emitter Voltage : V CE [V] 0 5 10 15 20 25 I C =400A I C =200A I C =100A Collector-Emitter vs. Gate-Emitter Voltage T j=25°C Collector Emitter Voltage : V CE [V] Gate-Emitter Voltage : V GE [V] 0 5 10 15 20 25 I C =400A I C =200A I C =100A Collector-Emitter vs. Gate-Emitter Voltage T j=125°C Collector Emitter Voltage : V CE [V] Gate-Emitter Voltage : V GE [V] 0 100 200 300 400 100 1000 t r t f t off t on Switching Time vs. Collector Current V CC =600V, R G =4,7 Ω , V GE =±15V, T j=25°C Switching Time : t on , t r , t off , t f [nsec] Collector Current: I C (A) 0 100 200 300 400 100 1000 t r t f t off t on Switching Time vs. Collector Current V CC =600V, R G =4,7 Ω , V GE =±15V, T j=25°C Switching Time : t on , t r , t off , t f [nsec] Collector Current: I C (A)

Switching Time vs. R G V CC =600V, I C =200A, V GE =±15V, T j=25°C Gate Resistance : R G [ Ω ] Switching Time : t on, t r, t off, t f [nsec] 0 500 1000 1500 200 400 600 800 1000 V CC =400, 600, 800V Gate-Emitter Voltage : V GE [V] Collector Current vs. Collector-Emitter Voltage T j=25°C Collector-Emitter-Voltage : V GE [V] Gate Charge: Q g (nC) 0 1 2 3 4 100 200 300 400 500 25°CT j=125°C Forward Voltage vs. Forward Current V GE =0V Forward Current : I F [A] Forward Voltage : V F [V] 0 100 200 300 400 100 1000 I rr = 25°C trr = 25°C I rr =125°C t rr =125°C Reverse Recovery Characteristics t rr , I rr vs. I F Reverse Recovery Current : I rr [A] Reverse Recovery Time : t rr [nsec] Forward Current : I F [A] 10 -3 10 -2 10 -1 10 0 10 -3 10 -2 10 -1 IGBT FWD Transient Thermal Resistance Thermal Resistance : R th(j-c) [°C/W] Pulse Width : P W [sec] 0 200 400 600 800 1000 1200 1400 1600 500 1000 1500 2000 2500 RBSOA (Repetitive pulse) SCSOA (non-repetitive pulse) Reverse Biased Safe Operating Area +V GE =15V, -V GE ≤15V, T j≤125°C, R G ≥4,7 Ω Collector Current : I C [A] Collector-Emitter Voltage : V CE [V]

Switching Loss vs. Collector Current V CC =600V, R G =4,7 Ω , V GE =±15V E on 125°C E on 25°C E off 125°C E off 25°C E rr 125°C E rr 25°C Switching Loss : E on , E off , E rr [mJ/cycle] Collector Current : I C [A] 0 5 10 15 20 25 30 35 0,1 100 C res C oes C ies Capacitance vs. Collector-Emitter Voltage T j=25°C Capacitance: C ies , C oes , C res [nF] Collector Emitter Voltage : V CE [V]

For more information, contact: Collmer Semiconductor, Inc. P.O. Box 702708 Dallas, TX 75370 972-233-1589 972-233-0481 Fax http://www.collmer.com