2MBI200NT-120-02 FUJI
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Device Name : IGBT module Type Name : 2MBL200 NT - 120-02 283as ESSE SSi2e Fuji Electric Co.,Ltd. Matsumoto Factory [i k= 3/ VA Regal | = eine Coie 3| MS5F3938 0 FH ~ H04-004-07
| Date [Sse [in| Content [sei | Drawn cess ssa a ts/7 fer. 18.477 [Revision | a | Revers gate bias voltage, ppt: bp | SE, Fuji Electric Co,Ltd. :| MS5F3938 x“ —~ H04-004-06
- Outline Drawing Unit : mm Se 2570.2 , 28:02 123.5202, a wl. wll | MF POT TIT TIT | _ fT Tg a rg ~ ey tl | Tl ; 122s 3i 2b Bb 225 E253 “93402 ' ‘ i g223e ' 108+! 23322 3-46 pratere
52222 FaaFaaee coon
ai05s | -ERTEE 25535 8 arare® Zsise ca oo aes 22332 2. Equivalent circuit C2E1 fe} ° a cl ==! F2 bf Te Gl EI G2 ER * NLU (Over Current Limiting Circuit) ‘ S a Fuji Electric Co Lid. :| MS5F 3938 x + 04-04-03
- Absolute Maximum Ratings (at Tc=25°C unless otherwise specified ) | [tens Synbols ; ves =20 | i | Continuous [ie 200 : Collector = | dns] Te pulse {00st current, [te 200 [tas [=e pulse [a0 lax. power dissipation [Po] 1680. FJ Operating temperature | Ti | SD —«dYSC teint 2-4] | Note : *1 Recommendable value : 2.5~3.5N-m (M5) or (M6) #2 Recommendable value : 3.5~4.5N-m (M6) 4. Electrical characteristics ( at Tj=25°C unless otherwise specified) Items Symbols Conditions [ters : [ min. | typ. [ max. | E353 Zero gate voltage P= [| [ee pe Vce=1200¥ | ai
32335 Collector current
e328 lGate-Emitter leakage Pm] fT [| Vce=0V, Voe== 200 BA 2esey current 23223 voltage
23525 Collector-Emitter Vee (sat) Vce=15V, Ic=2004 v
Baeez Joutput capacitance [Goes |_| 15000[ __|¥ce=10v oF 23 3s capacitance a iif: Turn-on time [ton [| | 0.65 | 1.2 |Wee=600v a [tr ff 0.25 | 0.6 |tc-2008 es Turn-off time | toff [| [0.85 | 1.5 Woe=+I5v ae a Diode forward on VF 3.4 {IF=200A, Voz=0V v foie | | freee Reverse recovery tine [wr | [| 360 i208 Short-circuit withstand Vec=800V, Voz=-15V us fascia TET Pee | 5. Thermal resistance characteristics ae a ae Fo Bd the base to cooling 3X This is the value which is defined mounting on the additional cooling fin with thermal compound. FA trian D, a S i Fuji Electric Co.Ltd. 2} MS5F3938 a= > ve ¥04-004-63
! ~— H mec 2U3I200NT~120- 02 H DUD mesos : i | 7. Applicable category (BASE) | This specification is applied to IGBT module named 2MBI200NT-120-02. i FRAME, BIS 7=— 2MB1200NT-1 20-O2KRATS. 2MS 1 200NT~120~021 8. Storage and transportation notes (2F, HELO Swe) +The IGBT module should be stored 2t a standard temperature of 5 to 35°C and humidity of 45 to 75%. BEREBBZELW, (5~35'C, 45~75%) * Store modules in a place with few temperature changes in order to avoid sore condensation on the module surface.
2328 BRMRBEALORELL, (SV¥a—ARMSHSRLAWTL)
Peers + Avoid exposure to corrosive gases and dust. 2is32 MEN AOREBZH, BROSVBMIBEISIL, zee 22 + Avoid excessive external force on the module. g:d2 NAKWEBDP SAVE ICTSEETSLIL, zeiz3 * Store modules with unprocessed terminals. $2555 EV S—NOBFIRMLORECRET SIL. gi523 *Do not drop or otherwise shock the modules when transporting. 32a RROMRRILBRESALO, EFECRVLAWIL, 32322 E27! | 9. Heat sink mounting notes (E— ho > 7 ROH Loe rises “The mounting surface of the heat sink should be finished to 2 roughness of - 104m or less and a warp between screw holes of 100ym or less. REV a—-NERI GI SSSKORH BOLL, BK0n DLE, RATA Bl CES nw FETS, +. *Each mounting screw should be fastened using a specified torque after pre- fastening using 2 1/3 specified torque. BAITRIL, BEDI3O bi CREE ORE, BED bLO CHER CT ey, * If the above notes are not met, it has a possibility to break the insulation between the IGBT module's chips and meta] base. LEE BE AOSEACHEALARS. WBE 2—N OF yo TLERX<— ano BRRALETS URES DET, @ 10. Revers gate. bias voltage (_ }- x <4 TREE) @ -Recommendable value of the revers gate bias voltage : -7V(typ.), -5V(min.) RG-47.0 F-PUAA 7 ABEOWIEE © -7V(typ.), -5V(min.) RG 4.70 @ -The revers gate bias voltage means the voltage between the gate terminal and the auxiliary emitter terminal of the modules. . F— bP T ABE, TV2—-NVOF— MBF LMI y PMIMOBETCHS. a Z] Tad | Fuji Electric Co,Ltd (2) MS 5F3938 A H04-004-03
ayeas'e tense 500 : : 7 0 $09 7 7 r 5 I : Veter isr ray, tor Meconisnin, ar} | = i = boy 2 4 i 2 i i ~ 300 Lt 2550 i | © 00 “100 4 e424 4 ° ° ° 1 2 3 4 s ° A 2 3 cs s Colleczor-Emizzer voltare : YSE ™m Collecter-fmlizer velzare > YoE mM Switching time ve. Collector curreat Seltching time vs. Collector current Yees?00¥, R6=1. 80. WEE*15¥/-SY, Tje25°C Yees700Y, RG=1.82, YGEe=1SV/-SY, Tjet35"o a = seid [ ¥ 5 = —— 7 iets]. (os Z Ln ae Seo eeis | z Hl poo g a 1 — S2sie | > fl i = i i ane i ! i = 00 i i | Hig]: = : ———— eee ESF $3923 |2 aS a ne I Perez | 2 i i | 2 S322 | + i H | . zei2¢ |. i . ‘ a % 253! > 100 200 300 zoo 00 700 300 “00 gs a Cottector eurrent : te [A), Collector current : te [4) aS 55 Switching lous ve. Cotlecter cerrant ~ ~ jake ter velzare . FFE: Yeen?00v. Reata9 , vEEsISY/—sY Tiease = , pate z A A f Et eq oo u a £ i 4 ° 100 200, 300 400, LJ s 10 is 20 25 20 25 } Collector current tle = (A) Celtvcter-atzter Veltare : Yet [¥} | gs 3 8 pais o . & By Fuji Electric Colid. s| MS5F39 bp a4 a 5 7m cRe H04—-004-03
Seitching tive va RG Opnssic inovt chacscteristicn YeesT00v, 16-2008, VeEsT5¥/-3¥,T)e25°C Tas tert veegtoov . . a coor : ey z ee nn // Aa 1000 a + 3 y = “I = i i | | i z i z 7 ' 1 10 0 500 1000 1500 2000 2500-3000 Gate cesintance : RG [2] Gate charee > Of (aC) Forvard current vs. Forvard voltate Reverse recovery characteriaticn Woe-oy wre tere We 500 3852 i | | I > | 23s ool i = | ie | i Suis 0 H 7 i 2: ee sae : S3iig | = i i i te eee fbsae TZ i Tense wef Ts - ler ZES EE | tod eae en en Pn Re ie sizes | 2 i i | FOE POUL a ar $5425 5 i i >= i i FSFES | Scoop / t zr ft: po | : -EBREE z i i BS - + i : A - z5e3t 100] it, —— : t L i 2525 i : aE i 3825? L { : é Hl Besse o 10 eg5as ° 1 2 3 « 3 0 00 200 300 400 23222 waste Forward voltage : VF (¥) Forward current : if iA} Reversed biated sate overating area Transient theraal resistance SNGEISY, -WOESISY, THS135°C. A6Z1.8D
2 FE 9800 nn
2 Try as aye sesoa A
2 : a oon-repetitive pulse) yoo ooo eed ZG : ‘, 0.001 ms pulse vigth s 78 (see) Collector-Emitter voltage : Yee [¥) - 2 3 8 Tai} se ae S _ Fuji Electric Co,Ltd. 2| MS5F39 iy Ele _ mic Te eangtea3