2MBI200NB-120-01 FUJI

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Features

  • VCE(sat) classified for easy parallel connection
  • High speed switching
  • Voltage drive
  • Low inductance module structure

Applications

  • Inverter for Motor drive
  • AC and DC Servo drive amplifier
  • Uninterruptible power supply
  • Industrial machines, such as Welding machines Maximum ratings and characteristics Absolute maximum ratings (at Tc=25°C unless otherwise specified) Item Symbol Collector-Emitter voltage VCES Gate-Emitter voltage VGES Collector Continuous IC current 1ms IC pulse -IC 1ms -IC pulse Max. power dissipation PC Operating temperature Tj Storage temperature Tstg Isolation voltage Vis Screw torque Mounting *1 Terminals *2 Rating 1200 ±20 200 400 200 400 1500 +150 -40 to +125 AC 2500 (1min.) 3.5 4.5 Unit V V A A A A W V N·m N·m Item Symbol Characteristics Conditions Unit Min. Typ. Max. Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Diode forward on voltage Reverse recovery time I CES IGES VGE(th) VCE(sat) C ies C oes C res ton tr toff tf VF trr – – 2.0 – – 30 4.5 – 7.5 – – 3.3 – 32000 – – 11600 – – 10320 – – 0.65 1.2 – 0.25 0.6 – 0.85 1.5 – 0.35 0.5 – – 3.0 – – 0.35 VGE =0V , VCE =1200V VCE =0V, VGE =±20V VCE =20V, IC =200mA VGE =15V, IC =200A VGE =0V VCE =10V f=1MHz V CC =600V IC =200A VGE =±15V R G =4.7ohm IF=200A, VGE =0V IF=200A mA µA V V pF µs V µs Electrical characteristics (at Tj=25°C unless otherwise specified) Thermal resistance characteristics Item Symbol Characteristics Conditions Unit Min. Typ. Max. Rth(j-c) Thermal resistance Rth(j-c) Rth(c-f)* – – 0.085 – – 0.18 – 0.025 – IGBT Diode the base to cooling fin °C/W °C/W °C/W * : This is the value which is defined mounting on the additional cooling fin with thermal compound Equivalent Circuit Schematic ¤ Current control circuit G1 E1 G2 E2 C1 E2 C2E1 *1 : Recommendable value : 2.5 to 3.5 N·m (M5) or (M6) *2 : Recommendable value : 3.5 to 4.5 N·m (M6) VCE(sat) classification Rank Lenge Conditions F 2.25 to 2.50V A 2.40 to 2.65V Ic = 200A B 2.55 to 2.80V V GE = 15V C 2.70 to 2.95V Tj = 25°C D 2.85 to 3.10V E 3.00 to 3.30V

Not recommend for new design. 2MBI200NB-120-01 IGBT Module Characteristics (Representative) Collector current vs. Collector-Emitter voltage Tj=25°C Collector current vs. Collector-Emitter voltage Tj=125°C Collector-Emitter vs. Gate-Emitter voltage Tj=25°C Collector-Emitter vs. Gate-Emitter voltage Tj=125°C Switching time vs. Collector current Vcc=600V, RG=4.7 ohm, VGE=±15V , Tj=25°C Switching time vs. Collector current Vcc=600V , RG=4.7 ohm, VGE=±15V , Tj=125°C Collector-Emitter voltage : VCE [V] Collector-Emitter voltage : VCE [V] Collector current : Ic [A] Collector current : Ic [A] 500 400 300 200 100 500 400 300 200 100 0 1 2 3 4 50 1 2 3 4 5 Collector-Emitter voltage : VCE [V] Collector-Emitter voltage : VCE [V] 0 5 10 15 20 25 0 5 10 15 20 25 Gate-Emitter voltage : VGE [V] Gate-Emitter voltage : VGE [V] Switching time : ton, tr, toff, tf [n sec.] 1000 100 0 100 200 300 400 Collector current : Ic [A] 0 100 200 300 400 Collector current : Ic [A] Switching time : ton, tr, toff, tf [n sec.] 1000 100

Not recommend for new design. 2MBI200NB-120-01 IGBT Module Switching time vs. RG Vcc=600V , Ic=200A, VGE=±15V, Tj=25°C Dynamic input characteristics Tj=25°C Gate resistance : RG [ohm] Gate charge : Qg [nC] 0 500 1000 1500 2000 2500 100 1000 1000 800 600 400 200 Switching time : ton, tr, toff, tf [n sec.] Collector-Emitter voltage : VCE [V] Forward current : IF [A] 500 400 300 200 100 0 1 2 3 4 5 Gate-Emitter voltage : VGE [V] Forward voltage : VF [V] Reverse recovery current : Irr [A] Reverse recovery time : trr [n sec.] Forward current vs. Forward voltage VGE=0V Reverse recovery characteristics trr, Irr, vs. IF Forward current : IF [A] 100 Thermal resistance : Rth (j-c) [°C/W] T ransient thermal resistance 0.01 0.1 0.001 0.01 0.1 1 Pulse width : PW [sec.] Reversed biased safe operating area +VGE=15V, -VGE = 15V , Tj = 125°C, RG = 4.7ohm 0 100 200 300 400 < <> 2000 1600 1200 400 0 200 400 600 800 1000 1200 Collector-Emitter voltage : VCE [V] Collector current : Ic [A] 0.001 800

Not recommend for new design. 2MBI200NB-120-01 IGBT Module Outline Drawings, mm Switching loss vs. Collector current Vcc=600V, RG=4.7 ohm, VGE=±15V Switching loss : Eon, Eoff, Err [mJ/cycle] Collector current : Ic [A] 0 100 200 300 400 Collector-Emitter voltage : VCE [V] 0 5 10 15 20 25 30 35 100Capacitance : Cies, Coes, Cres [nF] Capacitance vs. Collector-Emitter voltage Tj=25°C