2MBI200HH-120-50 FUJI

Document overview

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Technical content

Features

Low Inductance module structure

Applications

Soft-switching Application Industrial machines, such as Welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25°C unless otherwise specified) Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Collector current Ic Continuous Tc=25°C 300 A Tc=80°C 200 Ic pulse 1ms Tc=25°C 600 Tc=80°C 400 -Ic 75 -Ic pulse 1ms 150 Collector Power Dissipation Pc 1 device 1790 W Junction temperature Tj +150 °CStorage temperature Tstg -40 ~ +125 Isolation voltage Between terminal and copper base (*1) Viso AC : 1min. 2500 VAC Screw torque Mounting (*2) - 3.5 N mTerminals (*3) 4.5 Note *1: All terminals should be connected together when isolation test will be done. Note *2: Recommendable Value : Mounting 2.5 to 3.5 Nm (M5 or M6) Note *3: Recommendable Value : Terminals 3.5 to 4.5 Nm (M6) Electrical characteristics (at Tj= 25°C unless otherwise specified) Items Symbols Conditions Characteristics Unitsmin. typ. max. Zero gate voltage collector current ICES VGE = 0V, VCE = 1200V - - 2.0 mA Gate-Emitter leakage current IGES VCE = 0V, VGE = ±20V - - 400 nA Gate-Emitter threshold voltage VGE (th) VCE = 20V, IC = 200mA 5.7 6.2 6.7 V Collector-Emitter saturation voltage VCE (sat) (terminal) VGE = 15V IC = 200A VTj=125°C - 4.25 - VCE (sat) (chip) Tj=125°C - 4.00 - Input capacitance Cies VCE = 10V, VGE = 0V, f = 1MHz - 18 - nF Turn-off time toff VCC = 600V, IC = 200A VGE = ±15V, RG = 1.6Ω Ls = 20nH - 0.30 0.60 µs tf 0.05 0.20 Forward on voltage VF (terminal) VGE = 0V IF = 75A VTj=125°C - 2.00 - VF (chip) Tj=125°C - 1.85 - Lead resistance, terminal-chip (*4) R lead - 1.20 - mΩ Note *4: Biggest internal terminal resistance among arm. Thermal resistance characteristics Items Symbols Conditions Characteristics Unitsmin. typ. max. Thermal resistance (1device) Rth(j-c) IGBT - - 0.07 °C/WFWD - - 0.46 Contact Thermal resistance (1 device) (*5) Rth(c-f) with Thermal Compound - 0.025 - Note *5: This is the value which is defined mounting on the additional cooling fin with thermal compound.

IGBT Modules2MBI200HH-120-50 http://www.fujielectric.com/products/semiconductor/ Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25oC / chip Collector current vs. Collector-Emitter voltage (typ.) Tj=25oC / chip Collector current vs. Collector-Emitter voltage (typ.) Tj=125oC / chip Dynamic Gate charge (typ.)Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f=1MHz, Tj=25ºC Vcc=600V, Ic=200A, Tj=25oC 100 200 300 400 500 0 1 2 3 4 5 6 7 8 Collector-Emitter voltage : V CE [ V ] Collector current : Ic [ A ] 100 200 300 400 500 0 1 2 3 4 5 6 7 8 Collector-Emitter voltage : VCE [ V ] Collector current : Ic [A ]Collector-Emitter voltage : VCE [ V ]Collector- Emitter voltage : VCE[ 200V/div ] Gate-Emitter voltage : VGE [ 5V/div ] 100 200 300 400 500 0 1 2 3 4 5 6 7 Collector-Emitter voltage : VCE [ V ] Collector current : Ic [ A ]Capacitance : Cies, Coes, Cres [ nF ] 5 10 15 20 25 Gate-Emitter voltage : VGE [ V ] 0.1 1.0 10.0 100.0 0 10 20 30 Collector-Emitter voltage : VCE [ V ] 0 200 400 600 Gate charge : Qg [ nC ] VGE=20V 15V 12V 10V VGE=20V 15V 12V 10V Tj=25ºC Tj=125ºC Cies VCE VGE Coes Cres Ic=400A Ic=200A Ic=100A

http://www.fujielectric.com/products/semiconductor/ Switching loss vs. Gate resistance (typ.) Reverse bias safe operating area (max.) Vcc=600V, Ic=200A, VGE=±15V, Tj=125ºC Vcc=600V, VGE=±15V, RG=1.6Ω +VGE=15V, -VGE <= 15V, RG >= 1.6Ω, Tj <= 125ºC Switching loss vs. Collector current (typ.) Vcc=600V, Ic=200A, VGE=±15V,Tj=25ºC Switching time vs. Gate resistance (typ.) ).pyt( tnerruc rotcelloC .sv emit gnihctiwS).pyt( tnerruc rotcelloC .sv emit gnihctiwS Vcc=600V, VGE=±15V, RG=1.6Ω,Tj=25ºC Vcc=600V, VGE=±15V, RG=1.6Ω,Tj=125ºC 100 1000 10000 0 100 200 300 400 Collector current : Ic [ A ] 100 1000 10000 0 100 200 300 400 Collector current : Ic [ A ] 100 1000 10000 0.1 1.0 10.0 100.0 Gate resistance : RG [ Ω ] 0 50 100 150 200 250 300 350 400 Collector current : Ic [ A ] 0.1 1.0 10.0 100.0 Gate resistance : RG [ Ω ] Switching loss : Eoff [ mJ/pulse ] Switching time : toff, tf [ nsec ] Switching time : toff, tf [ nsec ] 100 200 300 400 500 0 400 800 1200 1600 Collector-Emitter voltage : VCE [ V ] Collector current : Ic [ A ] Switching loss : Eoff [ mJ/pulse ] Switching time : toff, tf [ nsec ] toff tf toff Eoff tf toff Eoff(125ºC) Eoff(25ºC) tf

IGBT Modules2MBI200HH-120-50 http://www.fujielectric.com/products/semiconductor/ Forward current vs. Forward on voltage (typ.) Transient thermal resistance (max.) chip 100 150 200 0 1 2 3 4 Forward on voltage : VF [ V ] Forward current : IF [ A ] Thermal resistance : Rth(j-c) [ ºC/W ] 0.001 0.010 0.100 1.000 0.001 0.010 0.100 1.000 Pulse width : PW [ sec ] Tj=25ºC Tj=125ºC FWD IGBT

http://www.fujielectric.com/products/semiconductor/ C2E1 Outline Drawings, mm Equivalent Circuit Schematic

IGBT Modules2MBI200HH-120-50 http://www.fujielectric.com/products/semiconductor/ WARNING 1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of May 2011. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sur to obtain the latest specifications. 2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design failsafe, flame retardant, and free of malfunction. 4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements.

  • Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment
  • Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc. 5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty.
  • Transportation equipment (mounted on cars and ships) • Trunk communications equipment
  • Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature
  • Emergency equipment for responding to disasters and anti-burglary devices • Safety devices
  • Medical equipment 6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation).
  • Space equipment • Aeronautic equipment • Nuclear control equipment
  • Submarine repeater equipment 7. Copyright ©1996-2011 by Fuji Electric Co., Ltd. All rights reserved. No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd. 8. If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product. Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein.