2MBI150NT-120A FUJI
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__ Device Name : IGBT module —Type Name: 2MBI1T50NT-120A_ _ aE Spec. No. i MS5F 4143 283 ze gEcee celss 23322 Fuji Electric Co.,Ltd. Matsumoto Factory os] DATE w : ee se i MS5F41 43 4 =|
Date | fication Ind, Content date Checked | Approved ! Paragragh 10. RG (PS/8) Sep. 1.77] Kevision F tebageshe| 8. Ofama HOSEN erase tentative Riiiy Zeles iH H ft ft fy Fuji Electric Co.Ltd. 2| MS5F4143 274 I ba = a) H04-004-06
- Outline Drawing Unit : mm So 25202, 25402 ,23.5202 NS ia | wl ae ‘ i i ST TT era] Ss Si; | . | | oe) | l i) =I z |p | LS? gig ISAAIESZ aL 3/8 z ch {rs EA | s | Oo i | i le 225 bl 2b Bl 225 “93202 ‘ 108+! . ‘ PEees 5 rere FIR hee our oes) eigge gtspe gigee Z a pal 2 arat® zeae of Isth ' E583 2. Equivalent circuit C2E1 KI Kt as fe) O fe) e) Gl El G2 E2 * NLU (Over Current Limiting Circuit) . Lal | Fuji Electric Co.,Ltd. A MS5F 4143 44 =
- Absolute Maximum Ratings ( at Tc=25°C unless otherwise specified ) collector A current [te 50 Wax power dissipation | re | 1010] ¥_ pee SBS 4 Note : *1 Recommendable value : 2.5~3.5.N+m (M5) or (M6) *2 Recommendable value : 3.5~4.5 N+*m (M6) 4. Electrical characteristics (at Tj=25°C unless otherwise specified) pS Pe Zero gate voltage Ices 2.0 |VcE=OV, Voe=1200V ficiearann | | | |e fear |e 3 : by current 5Rs Fi 2 voltage 3 isi saturation voltage ESEE5 [input capacitance | cies | [27000] [voe=0v HH output capacitance [Coes | [12500 | v=o oF 3 8 3 fe capacitance Bgere Turn-on time [ton [| | 0.65 | 1.2 |Vec=600¥ HG [tr [T0256 [0.6 Jic=150a us Fetes a oe a a OI ca Diode forward on Ve 3.4 |Ir=150A, Voe=OV v ous | | OT hee Reverse recovery time [tre [ [| 360 [iri50q ns Short-circuit withstand Pw 10 Vcc=B800V, VoE=+15V us Powe | TTT fee || 5. Thermal resistance characteristics [Rtn(i-e) | ono fice * 0. 025 the base to cooling pvcol [YT ee] | 3& This is the value which is defined mounting on the additional cooling fin with thermal compound. aT | Fuji Electric Co.,Ltd. | MS5F4143 0 4¢ PR yj} H04-004-03
- Indication on module (€2%a—WRAR) |FEs DBISONT=1208 Coo SON IZON Et bees eset Libot No. \\, Place of manufucturing {code} 7. Applicable category (i/i#GBH) This specification is applied to IGBT module named 2MB1150NT-120A. AMACRBA, GBTELYa—IV2MBI150NT—-120AK8MTS. 8. Storage and transportation notes (R#, ER tL ORBEA) +The IGBT module should be stored at a standard temperature of 5 to 35°C and humidity of 45 to 75%. BEREMBELI. (5~35C. 45~75%) +Store modules in a place with few temperature changes in order to avoid condensation on the module surface. WIE BILORE TE, (EY a—- WRT L) EES zy + Avoid exposure to corrosive gases and dust. Esiés MRE A AORAR. BRROSVMMAHISIe. Hats + Avoid excessive external force on the module. eEege MACHA SBVESKTAEBTSCE, ecg gs + Store modules with unprocessed terminals. EEeet EV a—-NORFIAMLORETRET STE. ECEEE + Do not drop or otherwise shock the modules when transporting. ~22328 MAORMHICGRESALO. BFEVAOLMBVIE, oor Peete 9. Heat sink mounting notes (E-~h2> > IRV LORRREA) fgees ose flan +The mounting surface of the heat sink should be finished to a roughness of EREsE 10um or less and a warp between screw holes of 100um or less. AEVaA-NEMOAVSRAKONRAMOKLT, Meer. MARTE CHE uMAFEDS. . - > Each mounting screw should be fastened using a specified torque after pre~ . fastening using a 1/3 specified torque. HUT RVIL, REOI/3O KID TREE ORE, MED hI CHMET OT Fav. + If the above notes are not met, it has a possibility to break the insulation between the IGBT module’s chips and metal base. LRERBROREN CHERLABS, BIEL a—-VOFy TEBSRN—AMO MURWUR ES ETS FREED DET. 10. Reverse gate bias voltage (7°—hit\\-1 7 A) @56 + Recommendable value of the reverse gale bias voltage : -7V(typ.),-5V(min. ), RG=9=tQ. F—bBNT P ADHERE : -7V (typ. ), -5V (min. ), RG=5. 6Q +The reverse gate bias voltage means the voltage between the gate terminal and the auxiliary emitter terminal of the module. F-hBNT TAME. EY a—-WOT—bweF CMBLS v7 MF MOBETHS. Fuji Electric Co.,Ltd. g MS5 F41 43 = i
; : LL. Setting dead-time (Fy F917 AOR) ” + Recommendable value of the dead-time : 3s (min) . Fy FIA WOH > 3ys (min) . co pre OQpnereeny | ST A | Vcr oe : | : E EsEPe Upper arm
23225 Gate voltage ON OFF ON
22253 L . aaa Lower erm | | EEESe Gate voltage OFF | OFF
7 T “OT
° ° . s T Fuji Electric Co,Lid | MS5F 4143 % = 7 104-0040
Collector current ve, Collector~Emitter voltage . Collector current vs. Colleotor-Emitter voltage Tj=25°C Tj=135°C
400 T 400 T T
H H | VGE=20¥, 15V, 12¥. ‘tov : i VOE=20V, 15¥, 12V, 10¥ & H “YG: : H $ Y H H H
5 F 7 i 4 4
Col lactor-Emitter voltage : VCE [V] Col lector-Emitter voltage ; VCE [V) Switching time vs. Collector current Switching time vs, Collector current Voo=700¥, RG=5.62, VGE+i5V/-5¥, Tj=25°C Voo=700V, RG=5.6Q. VGE=+15V/~5¥, Tj=135°C < SUEESESSESESIEEE Said en So eee a SE SyRSS 3 il os ih i po ye 7 ee a ae p85 28 7 Tt fteeenadesenened ee ee ee f5s ae N00 fe: eermennnfinemnnniarrmmnnbercrnecnd 1 100 feeceeeceegremmsefernnrre ectnrcntfemeen des asks < + i : : + 2 . # oe sre teste 5 ae a . gece 4 i i H E 4 E i E a 2 a a Se a ce Be a ag Bev ae ee ~ 2232s 3 F i i 3 i i i i i sre rad 10 10 euge iy 100 200 300 0 100 200 300 Ege zt Collector current : Ie (A) Collector current : lo [A] ae eké SEEre Switohing loss va, Collector current Capacitance va. Collactor-Emitter voltage z & ges Voo=700V, RO=5.69, VGE=+15V/-5¥ Tj=28°C BES 70 Ssg8e o i H Hi H * t i t Prevnees ? ? + a i bed Ett 13680] "200 Peennrardesnraenrdeeanedumamnrdernnansbrnannderte 3 i Bon 138°EE ber 7 g f f : ? ? - } ib i ‘ ps ‘Eon 25°C i ? H iH t A = Coos Fo G= Err 25°C. scored moe conned 0 50 100 150 200 250 300 0 5 10 15 20 25 30 35 Collector Current lo fa) Col lactor-Emitter Voltage vee [Vv] i] [ac] ji Electr 4] MS5F4143 77 Fuji Electric Co.,Ltd. g o CI a QO Ti H04-004-03
Switching time ve. RO Dynamic input character!stice Voo=700¥, lo=150A, VGE=+tS¥/-5Y, Tj=25°C T25'C bot i en ee ee ee toff { 1 Hi i 1 { Yoo=s H Cob if : L i i | | | 7 ton i t i i i 4 i a <u Fa | Popp EG A ee 3s Hi i | | fi i | | 1 10 0 200 400 600 800 1000 1200 1400 1600 1800 2000 Gate resistance : RG [2] Gate charge : Og — [nC] Forward current vs. Forward voltege Reverse recovery characteristics YGE=0V trr, irr ve. IF 300, i | tease ase =: | i pee . | : i =s i - + re s} Sey 7) a | Le ye eee L j | 135°C Bgees| i | | | 3 i t ier geass 2 1 i / © I asc 23 i ge é : l 2 4 | 3 g£g22 2 | : => | A ee ee a a 5 | | eee i \\ Se: i : 1 : _ EBS: Sa a Aas Ga at EH | | : 3 8 a Fi 3 0 1 2 3 4 5 0 100 200 300 gee EuaE = Forward voltage : VF (¥] Fornard current : IF (A) Peete Ease Reversed biased safe operating area Transient thermal resistance +WGE<15Y, -VGESISV, T)S135°C ® pelt sda [ (non-repétitive putse) A 3 r : 4 = 800} Ponce + - poo Ei | ] : i i i LA 3 i | a es es ee eens eens Some Wes : foment | SEE ELS. 8 a09pmmmmny oe i CoN I i i 200) aaa Ga 0.001 al 0.001 0.0t Ot 1 i) 200 400 600 800 1000 1200 Pulse width : PH [eee] Gol lector-Emitter voltage : ¥ce [¥) Fuji Electric Co.,Ltd. TS5F Ai 43 % 4 Ll