2MBI150NE-120 FUJI

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

IGBT MODULE ( N series ) nn Features

  • Square RBSOA
  • Low Saturation Voltage
  • Less Total Power Dissipation
  • Improved FWD Characteristic
  • Minimized Internal Stray Inductance
  • Overcurrent Limiting Function (4~5 Times Rated Current) nn Applications
  • High Power Switching
  • A.C. Motor Controls
  • D.C. Motor Controls
  • Uninterruptible Power Supply nn Outline Drawing nn Maximum Ratings and Characteristics
  • Absolute Maximum Ratings ( T c =25°C ) Items Symbols Ratings Units Collector-Emitter Voltage V CES 1200 V Gate -Emitter Voltage V GES ± 20 V Continuous IC 150 Collector 1ms IC PULSE 300 Current Continuous -I C 150 1ms -I C PULSE 300 Max. Power Dissipation P C 1100 W Operating Temperature T j +150 °C Storage Temperature T stg -40 ∼ +125 °C Isolation Voltage A.C. 1min. V is 2500 V Mounting *1 3.5 Terminals *2 4.5 Note: *1:Recommendable Value; 2.5 ∼ 3.5 Nm (M5) or (M6) *2:Recommendable Value; 3.5 ∼ 4.5 Nm (M6)
  • Electrical Characteristics ( at T j=25°C ) Items Symbols Test Conditions Min. Typ. Max. Units Zero Gate Voltage Collector Current ICES V GE =0V V CE =1200V 2.0 mA Gate-Emitter Leackage Current IGES V CE =0V V GE = ± 20V 30 µ A Gate-Emitter Threshold Voltage V GE(th) V GE =20V I C =150mA 4.5 7.5 V Collector-Emitter Saturation Voltage V CE(sat) V GE =15V I C =150A 3.3 V Input capacitance C ies V GE =0V 24000 Output capacitance C oes V CE =10V 8700 pF Reverse Transfer capacitance C res f=1MHz 7740 tON V CC =600V 0.65 1.2 tr IC =150A 0.25 0.6 tOFF V GE = ± 15V 0.85 1.5 tf R G =5.6 Ω 0.35 0.5 Diode Forward On-Voltage V F IF =150A V GE =0V 3.0 V Reverse Recovery Time trr IF =150A 350 ns
  • Thermal Characteristics Items Symbols Test Conditions Min. Typ. Max. Units R th(j-c) IGBT 0.11 Thermal Resistance R th(j-c) Diode 0.33 °C/W R th(c-f) With Thermal Compound 0.025 nn Equivalent Circuit Screw Torque Turn-on Time Turn-off Time µ s A Nm

Switching time vs. Collector current Vcc=600V, RG=5.6 Ω , V GE =±15V, Tj=25°C Switching time : ton, tr, toff, tf [nsec] Collector current : Ic [A] 0 1 2 3 4 5 100 200 300 V GE =20V,15V,12V,10V, Collector-Emitter voltage : V CE [V] Collector current : Ic [A] Collector current vs. Collector-Emitter voltage Tj=125°C 0 1 2 3 4 5 100 200 300 Collector current vs. Collector-Emitter voltage Tj=25°C Collector current : Ic [A] Collector-Emitter voltage : V CE [V] V GE =20V,15V,12V,10V 0 5 10 15 20 25 75A 150A 300A Collector-Emitter vs. Gate-Emitter voltage Tj=25°C Ic= Collector-Emitter voltage :V CE [V] Gate-Emitter voltage : V GE [V] 0 5 10 15 20 25 Collector-Emitter vs. Gate-Emitter voltage Tj=125°C 75A 150A 300A Ic= Collector-Emitter voltage V CE [V] Gate-Emitter voltage : V GE [V] 0 100 200 300 100 1000 Switching time vs. Collector current Vcc=600V, R G =5.6 Ω , V GE =±15V, Tj=125°C tf tr ton toff Switching time : ton, tr, toff, tf [nsec] Collector current : Ic [A]

0,001 0,01 0,1 1 0,001 0,01 0,1 IGBT Diode Transient thermal resistance Thermal resistance : Rth(j-c) [°C/W] Pulse width : PW [sec] 0 500 1000 1500 2000 200 400 600 800 1000 800V 600V Vcc=400V Dynamic input characteristics Tj=25°C Collector-Emitter voltage : V CE [V] Gate charge : Qg [nC] 100 1000 tf tr toff ton Switching time vs. RG Vcc=600V, Ic=150A, V GE =±15V, Tj=25°C Switching time : ton, tr, toff, tf [nsec] Gate resistance : RG [ Ω ] 0 1 2 3 4 5 100 200 300 Tj=125°C 25°C Forward current vs. Forward voltage V GE =OV Forward current : IF [A] Forward voltage : V F [V] 0 100 200 300 100 Irr 25°C trr 25°C trr 125°C Irr 125°C Reverse recovery characteristics trr, Irr vs. I F Reverse recovery current : Irr [A] Reverse recovery time : trr [nsec] Forward current : I F [A] 0 200 400 600 800 1000 1200 200 400 600 800 1000 1200 1400 RBSOA (Repetitive pulse) SCSOA (non-repetitive pulse) Reversed biased safe operating area +VGE=15V, -V GE < 15V, Tj < 125°C, R G > 5.6 Ω Collector current : Ic [A] Collector-Emitter voltage : V CE [V]

Capacitance vs. Collector-Emitter voltage Tj=25°C Capacitance : Cies, Coes, Cres [nF] Collector-Emitter Voltage : V CE [V] 0 50 100 150 200 250 300 Err 25°C Err 125°C Switching loss vs. Collector current Vcc=600V, R G =5.6 Ω , V GE =±15V Switching loss : Eon,Eoff,Err [mJ/cycle] Collector Current : Ic [A] Eon 25°C Eon 125°C Eoff 25°C Eoff 125°C Fuji Electric GmbH Fuji Electric (UK) Ltd. Lyoner Straße 26 Commonwealth House

2 Chalkhill Road Hammersmith

D-60528 Frankfurt/M London W6 8DW, UK Tel. : 069 - 66 90 29 - 0 Tel. : 0181 - 233 11 30 Fax. : 069 - 66 90 29 - 56 Fax. : 0181 - 233 11 60 P.O. Box 702708 - Dallas, TX 75370 Phone (972) 233-1589 Fax (972) 233-0481 - www.collmer.com