2MBI100NC-120 FUJI

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

IGBT MODULE ( N series ) nn Features

  • Square RBSOA
  • Low Saturation Voltage
  • Less Total Power Dissipation
  • Improved FWD Characteristic
  • Minimized Internal Stray Inductance
  • Overcurrent Limiting Function (4~5 Times Rated Current) nn Applications
  • High Power Switching
  • A.C. Motor Controls
  • D.C. Motor Controls
  • Uninterruptible Power Supply nn Outline Drawing nn Maximum Ratings and Characteristics
  • Absolute Maximum Ratings ( T c =25°C ) Items Symbols Ratings Units Collector-Emitter Voltage V CES 1200 V Gate -Emitter Voltage V GES ± 20 V Continuous IC 100 Collector 1ms IC PULSE 200 Current Continuous -I C 100 1ms -I C PULSE 200 Max. Power Dissipation P C 780 W Operating Temperature T j +150 °C Storage Temperature T stg -40 ∼ +125 °C Isolation Voltage A.C. 1min. V is 2500 V Mounting *1 3.5 Terminals *1 3.5 Note: *1:Recommendable Value; 2.5 ∼ 3.5 Nm (M5)
  • Electrical Characteristics ( at T j=25°C ) Items Symbols Test Conditions Min. Typ. Max. Units Zero Gate Voltage Collector Current ICES V GE =0V V CE =1200V 2.0 mA Gate-Emitter Leackage Current IGES V CE =0V V GE = ± 20V 30 µ A Gate-Emitter Threshold Voltage V GE(th) V GE =20V I C =100mA 4.5 7.5 V Collector-Emitter Saturation Voltage V CE(sat) V GE =15V I C =100A 3.3 V Input capacitance C ies V GE =0V 16000 Output capacitance C oes V CE =10V 5800 pF Reverse Transfer capacitance C res f=1MHz 5160 tON V CC =600V 0.65 1.2 tr IC =100A 0.25 0.6 tOFF V GE = ± 15V 0.85 1.5 tf R G =9.1 Ω 0.35 0.5 Diode Forward On-Voltage V F IF =100A V GE =0V 3.0 V Reverse Recovery Time trr IF =100A 350 ns
  • Thermal Characteristics Items Symbols Test Conditions Min. Typ. Max. Units R th(j-c) IGBT 0.16 Thermal Resistance R th(j-c) Diode 0.33 °C/W R th(c-f) With Thermal Compound 0.025 nn Equivalent Circuit Screw Torque Turn-on Time Turn-off Time µ s A Nm

Switching time vs. Collector current V CC =600V, R G =9.1 Ω , V GE ±15V, T j=25°C Switching time : t ON , t r, t OFF , t f [nsec] Collector current : I C [A] 0 1 2 3 4 5 100 150 200 250 Collector-Emitter voltage : V CE [V] Collector current : I C [A] Collector current vs. Collector-Emitter voltage T j=125°C 0 1 2 3 4 5 100 150 200 250 V GE =20V,15V,12V,10V Collector current vs. Collector-Emitter voltage T j=25°C Collector current : I C [A] Collector-Emitter voltage : V CE [V] V GE =20V,15V,12V,10V 0 5 10 15 20 25 50A 100A 200A Collector-Emitter vs. Gate-Emitter voltage T j=25°C I C = Collector-Emitter voltage :V CE [V] Gate-Emitter voltage : V GE [V] 0 5 10 15 20 25 Collector-Emitter vs. Gate-Emitter voltage T j=125°C 50A 100A 200A I C = Collector-Emitter voltage V CE [V] Gate-Emitter voltage : V GE [V] 0 50 100 150 200 100 1000 Switching time vs. Collector current V CC =600V, R G =9.1 Ω , V GE =±15V, T j=125°C t f t r t ON t OFF Switching time : t ON , t r, t OFF , t f [nsec] Collector current : I C [A]

0,001 0,01 0,1 1 0,001 0,01 0,1 IGBT Diode Transient Thermal Resistance Thermal resistance : R th(j-c) [°C/W] Pulse Width : PW [s] 0 400 800 1200 200 400 600 800 1000 800V 600V V CC =400V Dynamic Input Characteristics T j=25°C Collector-Emitter Voltage : V CE [V] Gate Charge : Q G [nC] 100 1000 t f t r t OFF t ON Switching Time vs. R G V CC =600V, I C =100A, V GE =±15V, T j=25°C Switching Time : t ON , t r, t OFF , t f [ns] Gate Resistance : R G [ Ω ] 0 1 2 3 4 5 100 150 200 250 T j=125°C 25°C Forward Current vs. Forward Voltage V GE =0V Forward Current : I F [A] Forward Voltage : V F [V] 0 50 100 150 200 100 I rr 25°C t rr 25°C t rr 125°C I rr 125°C Reverse Recovery Characteristics t rr , I rr vs. I F Reverse Recovery Current : I rr [A] Reverse Recovery Time : t rr [ns] Forward Current : I F [A] 0 200 400 600 800 1000 1200 200 400 600 800 1000 RBSOA (Repetitive pulse) SCSOA (non-repetitive pulse) Reversed Biased Safe Operating Area +V GE =15V, -V GE < 15V, T j< 125°C, R G > 9.1 Ω Collector Current : I C [A] Collector-Emitter Voltage : V CE [V] Gate-Emitter Voltage : V GE [V]

Capacitance vs. Collector-Emitter voltage T j=25°C Capacitance : C ies , C oes , C res [nF] Collector-Emitter Voltage : V CE [V] 0 50 100 150 200 E rr 25°C E rr 125°C Switching loss vs. Collector current V CC =600V, R G =9.1 Ω , V GE =±15V Switching loss : E ON ,E OFF ,E rr [mJ/cycle] Collector Current : I C [A] E ON 25°C E ON 125°C E OFF 25°C E OFF 125°C Fuji Electric GmbH Fuji Electric (UK) Ltd. Lyoner Straße 26 Commonwealth House

2 Chalkhill Road Hammersmith

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