2MBI1000VXB-170E-50

2MBI1000VXB-170E-50 FUJI

Document overview

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Technical content

Features

Low Inductance module structure

Applications

AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25°C unless otherwise specified) Items Symbols Conditions Maximum ratings Units Inverter Collector-Emitter voltage VCES 1700 V Gate-Emitter voltage VGES ±20 V Collector current Ic Continuous Tc=25°C 1400 A Tc=100°C 1000 Ic pulse 1ms 2000 -Ic 1000 -Ic pulse 1ms 2000 Collector power dissipation Pc 1 device 6250 W Junction temperature Tj 175 °COperating junction temperature (under switching conditions) Tjop 150 Case temperature TC 150 Storage temperature Tstg -40 ~ +150 Isolation voltage between terminal and copper base (*1) Viso AC : 1min. 4000 VACbetween thermistor and others (*2) Screw torque (*3) Mounting M5 6.0 N mMain Terminals M8 10.0 Sense Terminals M4 2.1 Note *1: All terminals should be connected together during the test. Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test. Note *3: Recommendable Value : Mounting 3.0 ~ 6.0 Nm (M5) Recommendable Value : Main Terminals 8.0 ~ 10.0 Nm (M8) Recommendable Value : Sense Terminals 1.8 ~ 2.1 Nm (M4) Electrical characteristics (at Tj= 25°C unless otherwise specified) Items Symbols Conditions Characteristics Unitsmin. typ. max. Inverter Zero gate voltage collector current ICES VGE = 0V, VCE = 1700V - - 6.0 mA Gate-Emitter leakage current IGES VCE = 0V, VGE = ±20V - - 1200 nA Gate-Emitter threshold voltage VGE (th) VCE = 20V, IC = 1000mA 6.0 6.5 7.0 V Collector-Emitter saturation voltage VCE (sat) (terminal) (*4) VGE = 15V IC = 1000A V Tj=125°C - 2.50 - Tj=150°C - 2.55 - VCE (sat) (chip) Tj=125°C - 2.40 - Tj=150°C - 2.45 - Input capacitance Cies VCE = 10V, VGE = 0V, f = 1MHz - 94 - nF Turn-on time ton VCC = 900V IC = 1000A VGE = ±15V RG = +1.2/-1.8Ω - 1.25 - µs tr - 0.5 - tr (i) - 0.15 - Turn-off time toff - 1.55 - tf - 0.15 - Forward on voltage VF (terminal) (*4) V GE = 0V IF = 1000A V Tj=125°C - 2.20 - Tj=150°C - 2.15 - VF (chip) Tj=125°C - 2.10 - Tj=150°C - 2.05 - Reverse recovery time trr IF = 1000A - 0.24 - µs Thermistor Resistance R T=25°C - 5000 - ΩT=100°C 465 495 520 B value B T=25/50°C 3305 3375 3450 K Note *1: Please refer to page 6 , there is definition of on-state voltage at terminal. Thermal resistance characteristics Items Symbols Conditions Characteristics Unitsmin. typ. max. Thermal resistance (1device) Rth(j-c) Inverter IGBT - - 0.024 °C/WInverter FWD - - 0.048 Contact thermal resistance (1device) (*5) Rth(c-f) with Thermal Compound - 0.0083 - Note *5: This is the value which is defined mounting on the additional cooling fin with thermal compound.

IGBT Modules2MBI1000VXB-170E-50 http://www.fujielectric.com/products/semiconductor/ Characteristics (Representative) [INVERTER] Dynamic Gate Charge (typ.) Vcc=900V, Ic=1000A, Tj= 25°C Collector current vs. Collector-Emitter voltage (typ.) Tj= 150°C / chip Gate Capacitance vs. Collector-Emitter Voltage (typ.) VGE= 0V, ƒ= 1MHz, Tj= 25°C [INVERTER] Collector current vs. Collector-Emitter voltage (typ.) VGE= 15V / chip [INVERTER] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj= 25°C / chip [INVERTER] [INVERTER][INVERTER] Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip 100 1000 0 10 20 305 Collector-Emitter voltage: VCE [V] Gate Capacitance: Cies, Coes, Cres [nF] Cies Cres Coes 200 400 600 800 1000 1200 1400 1600 1800 2000 0 1 2 3 4 5 Collector-Emitter voltage: V CE [V] Collector current: Ic [A] VGE=20V 15V 12V 10V 200 400 600 800 1000 1200 1400 1600 1800 2000 0 1 2 3 4 5 Collector-Emitter voltage: VCE [V] Collector current: Ic [A] VGE= 20V 12V 15V 10V 200 400 600 800 1000 1200 1400 1600 1800 2000 0 1 2 3 4 5 Collector-Emitter Voltage: V CE [V] Collector Current: Ic [A] 125°CTj=25°C 150°C 5 10 15 20 25 Gate-Emitter Voltage: VGE [V] Collector-Emitter Voltage: VCE [V] Ic=2000A Ic=1000A Ic=500A 0 2000 4000 6000 8000 10000 12000 Gate charge: Qg [nC] Collector-Emitter voltage: VCE [200V/div] Gate-Emitter voltage: VGE [5V/div] VCE VGE 15 25

http://www.fujielectric.com/products/semiconductor/ [INVERTER] [INVERTER] Switching time vs. Gate resistance (typ.) Vcc=900V, Ic=1000A, VGE=±15V, Tj=125°C, 150°C Switching loss vs. Collector current (typ.) Vcc=900V, VGE=±15V, RG=+1.2/-1.8Ω, Tj=125°C, 150°C [INVERTER] Reverse bias safe operating area (max.) Vcc=900V, VGE=±15V, RG=+1.2/-1.8Ω, Tj=125°C, 150°C Switching time vs. Collector current (typ.) [INVERTER] [INVERTER][INVERTER] Switching time vs. Collector current (typ.) Vcc=900V, VGE=±15V, RG=+1.2/-1.8Ω, Tj=25°C +VGE=15V, -VGE=15V, RG=+1.2/-1.8Ω, Tj=150°CVcc=900V, Ic=1000A, VGE=±15V, Tj=125°C, 150°C Switching loss vs. Gate resistance (typ.) 100 1000 10000 0 500 1000 1500 2000 2500 Collector current: Ic [A] Switching time: ton, tr, toff, tf [nsec] tf tr toff ton 100 1000 10000 0 500 1000 1500 2000 2500 Collector current: Ic [A] Switching time: ton, tr, toff, tf [nsec] tf tr toff ton Tj=125oC Tj=150oC 100 1000 10000 0111.0 Gate resistance: RG [Ω] Switching time: ton, tr, toff, tf [nsec] tf tr toff ton Tj=125oC Tj=150oC 100 200 300 400 500 600 700 800 900 0 500 1000 1500 2000 2500 Collector current: Ic [A] Switching loss: Eon, Eoff, Err [mJ/pulse] EonEoff Err Tj=125oC Tj=150oC 200 400 600 800 1000 1200 0110 Gate resistance: R G [Ω] Switching loss: Eon, Eoff, Err [mJ/pulse] Eoff Err Eon Tj=125oC Tj=150oC 500 1000 1500 2000 2500 0 500 1000 1500 2000 Collector-Emitter voltage: VCE [V] Collector current: Ic [A] Notice) Please refer to page 6. There is definision of V CE.

IGBT Modules2MBI1000VXB-170E-50 http://www.fujielectric.com/products/semiconductor/ Reverse Recovery Characteristics (typ.) Vcc=900V, VGE=±15V, RG=+1.2/-1.8Ω, Tj=125°C, 150°C [THERMISTOR] [INVERTER] ]RETREVNI[]RETREVNI[ Transient Thermal Resistance (max.) Forward Current vs. Forward Voltage (typ.) chip Reverse Recovery Characteristics (typ.) Vcc=900V, VGE=±15V, RG=+1.2/-1.8Ω, Tj=25°C Temperature characteristic (typ.) Forward on voltage: VF [V] Forward current: IF [A] 100 1000 10000 0 500 1000 1500 2000 2500 Forward current: IF [A] Reverse recovery current: Irr [A] Reverse recovery time: trr [nsec] Irr trr 0.001 0.01 0.1 0.001 0.01 0.1 1 Pulse Width : Pw [sec] Thermal resistanse: Rth(j-c) [°C/W] IGBT FWD 0.1 100 -60 -40 -20 0 20 40 60 80 100 120 140 160 Temperature [°C] Resistance : R [kΩ] 100 1000 10000 0 500 1000 1500 2000 2500 Forward current: IF [A] Reverse recovery current: Irr [A] Reverse recovery time: trr [nsec] Irr trr Tj=125oC Tj=150oC 200 400 600 800 1000 1200 1400 1600 1800 2000 0 1 2 3 4 125°C Tj=25°C 150°C

http://www.fujielectric.com/products/semiconductor/ LABEL2 (Fuji internal control codes) * This label may be eliminated without notification. LABEL [ Inverter ] Main C1 Main E2 Main C2E1 Sense C1 Sense C2E1 Sense E2 [ Thermistor ] TH1 TH2 Outline Drawings, mm Equivalent Circuit Schematic

IGBT Modules2MBI1000VXB-170E-50 http://www.fujielectric.com/products/semiconductor/ Definition of on-state voltage at terminal and switching characteristics Main C1 Main E2 Main C2E1 Sense C1 Sense C2E1 Sense E2 VCE (terminal) of Upper arm VCE (terminal) of Lower arm Fuji defined VCE value of terminal by using Sense C1 and Sense C2E1 for Upper arm and Sense C2E1 and Sense E2 for Lower arm . Switching characteristics of VCE also is defined between Sense C1 and Sense C2E1 for Upper arm and Sense C2E1 and Sense E2 for Lower arm . Please use these terminals whenever measure spike voltage and on-state voltage .

http://www.fujielectric.com/products/semiconductor/ WARNING 1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of May 2011. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sur to obtain the latest specifications. 2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design failsafe, flame retardant, and free of malfunction. 4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements.

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