2910N KIA

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130A，100V N-CHANNELMOSFETKIA SEMICONDUCTORS 2910NKIA SEMICONDUCTORS KIA SEMICONDUCTORS 1.Applications n HighefficiencysynchronousrectificationinSMPS n High speed power switching 2.Features n RDS(on)=7.0mΩ@VGS= 10 V n Super high dense cell design n Ultra low On-Resistance n 100% avalanche tested n Lead Free and Green devices available (RoHS Compliant) 3. Pinconfiguration 1of6 Rev1.0Jun.2016 Pin Function

1 Gate

2 Drain

3 Source

4 Drain

130A，100V N-CHANNELMOSFETKIA SEMICONDUCTORS 2910NKIA SEMICONDUCTORS KIA SEMICONDUCTORS 4. Absolutemaximumratings (TC=25 ºC,unlessotherwisespecified) Parameter Symbol Ratings Units Drain-sourcevoltage VDSS 100 V Gate-sourcevoltage VGSS ±25 V ContinuousdraincurrenetT C=25 ºC2 ID 130 A ContinuousdraincurrenetT C=100 ºC2 99 A 300uspulseddraincurrenttestedT C=25 ºC1 IDP 560 A Avalancheenergysinglepulse 3 EAS 552 mJ Powerdissipation TC=25 ºC PD 300 W TC=100 ºC 150 W Maximumjunctiontemperature TJ 175 °C Storagetemperaturerange TSTG -55~+175 °C DiodecontinuousforwardcurrentT C=25 ºC IS 140 A 5. Thermalcharacteristics Parameter Symbol Rating Unit Thermalresistance,Junction-to-case θJC 0.5 ºC/W Thermalresistance,Junction-to-ambient θJA 62.5 ºC/W 2of6 Rev1.0Jun.2016

130A，100V N-CHANNELMOSFETKIA SEMICONDUCTORS 2910NKIA SEMICONDUCTORS KIA SEMICONDUCTORS 6. Electricalcharacteristics (TC=25°C,unlessotherwisenotes) Parameter Symbol Conditions Min Typ Max Unit OffCharacteristics Drain-sourcebreakdownvoltage BVDSS VGS=0V,ID=250μA 100 - - V Drain-to-sourceleakagecurrent IDSS VDS=100V,V GS=0V - - 1 μA TJ=125 ºC - - 30 μA Gate-to-sourceleakagecurrent IGSS VGS=25V,VDS=0V - - 100 nA VGS=-25V,VDS=0V - - -100 nA Oncharacteristics Gatethresholdvoltage VGS(th) VDS=VGS,I D=250μA 2.0 - 4.0 V Staticdrain-sourceon-resistance 4 RDS(on) VGS=10V,ID=70A - 7.0 9.0 mΩ Gatechargecharacteristics 5 Totalgatecharge Qg VDS=80V,ID=70A,VGS=10V - 130 - nCGate-sourcecharge Qgs - 32 - Gate-drain(Miller)charge Qgd - 55 - Dynamiccharacteristics 5 Gateseriesresistance RG VDS=0V,VGS=0V,f=1.0MHz - 1 - Ω Turn-ondelaytime Td(ON) VDD=50V,ID=70A,VGEN=10V, RG=5Ω - 24 - nSRisetime trise - 91 - Turn-offdelaytime Td(OFF) - 75 - Falltime tfall - 65 - Inputcapacitance Ciss VDS=50V,VGS=0V,f=1.0MHz - 6800 - pFOutputcapacitance Coss - 630 - Reversetransfercapacitance Crss - 350 - Source-drainbodydiodecharacteristics TJ=25°C,unlessotherwisenotes Diodeforwardvoltage 4 VSD VGS=0V,IS=70A - - 1.2 V Reverserecoverytime trr ISD=70A,diF/dt=100A/μs, - 43 - ns Reverserecoverycharge Qrr - 67 - nC Note:1.Pulsewidthlimitedbysafeoperatingarea. 2.Caiculatedcontinuouscurrentbasedonmaximumallowablejunctiontemperature.Thepackage limitationcurrentis75A 3.LimitedbyT Jmax, IAS=47A,V DD=48V,R G=50Ω,StartingT J=25°C. 4.Pulsetest;Pulsewidth< 300μs;dutycycle< 2%. 5.Guaranteedbydesign,notsubjecttoproductiontesting. 6.KIAfinishedproductspecificationspleasecustomerbeforeplacingorder,shouldobtainthelatest versionofthefinishedproductspecifications. 3of6 Rev1.0Jun.2016

130A，100V N-CHANNELMOSFETKIA SEMICONDUCTORS 2910NKIA SEMICONDUCTORS KIA SEMICONDUCTORS 7.Typicalcharacteristics 4of6 Rev1.0Jun.2016

130A，100V N-CHANNELMOSFETKIA SEMICONDUCTORS 2910NKIA SEMICONDUCTORS KIA SEMICONDUCTORS 5of6 Rev1.0Jun2016

130A，100V N-CHANNELMOSFETKIA SEMICONDUCTORS 2910NKIA SEMICONDUCTORS KIA SEMICONDUCTORS 8.Testcircuitsandwaveforms 6of6 Rev1.0Jun2016