28N50H KIA
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Technical content
28A，500V N-CHANNELMOSFETKIA SEMICONDUCTORS 28N50HKIA SEMICONDUCTORS KIA SEMICONDUCTORS 1.Description ThisPowerMOSFETisproducedusingKIAadvancedplanarstripeDMOStechnology.Thisadvanced technologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitching performance,andwithstandhighenergypulseintheavalancheandcommutationmode.Thesedevices arewellsuitedforhighefficiencyswitchedmodepowersupplies,activepowerfactorcorrectionbasedon halfbridgetopology. 2.Features n RDS(on)=0.17Ω@ VGS=10V n Low gate charge ( typical 102nC) n Fast switching capability n Avalanche energy specified n Improved dv/dt capability 3. Pinconfiguration 1of5 Rev1.0JAN2014 Pin Function
1 Gate
2 Drain
3 Source
28A，500V N-CHANNELMOSFETKIA SEMICONDUCTORS 28N50HKIA SEMICONDUCTORS KIA SEMICONDUCTORS 4. Absolutemaximumratings (TC=25 ºC,unlessotherwisespecified) Parameter Symbol Ratings Units Drain-sourcevoltage VDSS 500 V Gate-sourcevoltage VGSS +30 V Draincurrentcontinuous TC=25ºC ID 28 A TC=100ºC 16.8 A Draincurrentpulsed(note1) IDP 112 A Avalancheenergy Repetitive(note1) EAR 43 mJ Singlepulse(note2) EAS 1960 mJ Peakdioderecoverydv/dt(note3) dv/dt 4.5 V/ns Totalpowerdissipation TC=25ºC PD 479 W derateabove25 ºC 3.83 W/ºC Junctiontemperature TJ +150 ºC Storagetemperature TSTG -55~+150 ºC *Draincurrentlimitedbymaximumjunctiontemperature. 5. Thermalcharacteristics Parameter Symbol Ratings Units Thermalresistance,junction-ambient RthJA 62.5 ºC/WThermalresistance,case-to-sinktyp. RthCS 0.5 Thermalresistance,Junction-case RthJC 0.26 2of5 Rev1.0JAN2014
28A，500V N-CHANNELMOSFETKIA SEMICONDUCTORS 28N50HKIA SEMICONDUCTORS KIA SEMICONDUCTORS 6. Electricalcharacteristics (TJ=25°C,unlessotherwisespecified) Parameter Symbol Conditions Min Typ Max Units Offcharacteristics Drain-sourcebreakdownvoltage BVDSS VGS=0V,ID=250μA 500 - - V Zerogatevoltagedraincurrent IDSS VDS=500V,V GS=0V - - 1 μA VDS=400V,T C=125 ºC - - 10 μA Gate-bodyleakagecurrent Forward IGSS VGS=30V,VDS=0V - - 100 nA Reverse VGS=-30V,VDS=0V - - -100 nA Breakdownvoltagetemperaturecoefficient △BVDSS/△TJ ID=250μA - 0.6 - V/°C Oncharacteristics Gatethresholdvoltage VGS(th) VDS=VGS,I D=250μA 2.0 - 4.0 V Staticdrain-sourceon-resistance RDS(on) VDS=10V,ID=14A - 0.16 0.2 Ω Forwardtransconductance gFS VDS=40V,ID=14A (note4) - 26 - S Dynamiccharacteristics Inputcapacitance Ciss VDS=25V,VGS=0V, f=1MHz - 4085 - pF Outputcapacitance Coss - 474 - pF Reversetransfercapacitance Crss - 60 - pF Switchingcharacteristics Turn-ondelaytime td(on) VDD=250V,ID=28A, RG=25Ω(note4,5) - 45 - ns Risetime tr - 87 - ns Turn-offdelaytime td(off) - 355 - ns Falltime tf - 130 - ns Totalgatecharge Qg VDS=400V,ID=28A, VGS=10V(note4,5) - 102 - nC Gate-sourcecharge Qgs - 43 - nC Gate-draincharge Qgd - 20 - nC Drain-sourcediodecharacteristics Drain-sourcediodeforwardvoltage VSD VGS=0V,ID=28A - - 1.4 V Continuousdrain-sourcecurrent ISD - - 28 A Pulseddrain-sourcecurrent ISM - - 112 A Reverserecoverytime trr ISD=28A dlSD/dt=100A/μs (note4) - 656 - ns Reverserecoverycharge Qrr - 11.5 - μC Note:1Repetitiverating:pulsewidthlimitedbymaximumjunctiontemperature 2.L=5mH,I AS=28A,VDD=50V,RG=25Ω,staringT J=25ºC 3.I SD<28A,di/dt< 100A/μs,V DD<BVDSS,staringT J=25 ºC 4.Pulsetest:pulsewidth< 300μs,dutycycle< 2% 5.Essentiallyindependentofoperatingtemperature 3of5 Rev1.0JAN2014
28A，500V N-CHANNELMOSFETKIA SEMICONDUCTORS 28N50HKIA SEMICONDUCTORS KIA SEMICONDUCTORS 7.Testcircuitsandwaveforms 4of5 Rev1.0JAN2014
28A，500V N-CHANNELMOSFETKIA SEMICONDUCTORS 28N50HKIA SEMICONDUCTORS KIA SEMICONDUCTORS 5of5 Rev1.0JAN2014