2808A KIA

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Technical content

150A，80V N-CHANNEL MOSFET KIA SEMICONDUCTORS 2808A KIA SEMICONDUCTORS KIA SEMICONDUCTORS 1. Features  RDS(on)=4.0mΩ（typ.）@ VGS=10V  100% avalanche tested  Reliable and rugged  Lead free and green device available（RoHS Compliant） 2. Applications  Switching application  Power management for inverter systems 3.Symbol 1 of 6 Pin Function

1 Gate

2 Drain

3 Source

150A，80V N-CHANNEL MOSFET KIA SEMICONDUCTORS 2808A KIA SEMICONDUCTORS KIA SEMICONDUCTORS 4. Absolute maximum ratings (TA=25°C,unless otherwise noted) Parameter Symbol Rating Units Drain-source voltage VDSS 80 V Gate-source voltage VGSS +25 V Maximum junction temperature TJ 175 ºC Storage temperature range TSTG -55 to175 ºC Diode continuous forward current TC=25ºC IS 150 A Continuous drain current TC=25ºC ID 150 A TC=100ºC 114 A Pulse drain current* TC=25ºC IDM 660 A Avalanche energy,single pulsed L=0.5mH EAS 1.1* J Maximum power dissipation TC=25 ºC PD 214 W TC=100ºC 107 W Note:* Repetitive rating;pulse width limited by junction temperature Drain current is limited by junction temperature *VD=64V 5. Thermal characteristics Parameter Symbol Rating Unit Thermal resistance,Junction-ambient RθJA 62.5 ºC/W Thermal resistance,Junction-case RθJC 0.7 ºC/W 2 of 6

150A，80V N-CHANNEL MOSFET KIA SEMICONDUCTORS 2808A KIA SEMICONDUCTORS KIA SEMICONDUCTORS 6. Electrical characteristics (TA=25°C,unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Units Drain-source breakdown voltage BVDSS VGS=0V,IDS=250μA 80 - - V Zero gate voltage drain current IDSS VDS=80V, VGS=0V - - 1 μA TJ=85°C - - 10 Gate threshold voltage VGS(th) VDS=VGS, ID=250μA 2.0 3.0 4.0 V Gate leakage current IGSS VGS=+25V, VDS=0V - - +100 nA Drain-source on-state resistance RDS(on) VGS=10V,ID=85A - 4.0 4.5 mΩ Gate resistance Rg VDS=0V, VGS=0V,f=1MHz - 1.8 - Ω Diode forward voltage VSD * ISD=85A, VGS=0V - 0.8 1.2 V Reverse recovery time trr ISD=85A , dlSD/dt=100A/μs - 30 - nS Reverse recovery charge Qrr - 52 - nC Input capacitance Ciss VDS=25V,VGS=0V, f=1MHz - 6109 - pF Output capacitance Coss - 995 - Reverse transfer capacitance Crss - 530 - Turn-on delay time td(on) VDD=40V, IDS=85A, RG=6Ω,VGS=10V - 28 - ns Rise time tr - 18 - Turn-off delay time td(off) - 42 - Fall time tf - 54 - Total gate charge Qg VDS=64V, VGS=10V IDS=85A - 152 - nC Gate-source charge Qgs - 25 -- Gate-drain charge Qgd - 53 -- Note*:Pulse test;pulse width<300us duty cycle<2%. 3 of 6

150A，80V N-CHANNEL MOSFET KIA SEMICONDUCTORS 2808A KIA SEMICONDUCTORS KIA SEMICONDUCTORS 7.Test circuits and waveforms 4 of 6

150A，80V N-CHANNEL MOSFET KIA SEMICONDUCTORS 2808A KIA SEMICONDUCTORS KIA SEMICONDUCTORS 5 of 6

150A，80V N-CHANNEL MOSFET KIA SEMICONDUCTORS 2808A KIA SEMICONDUCTORS KIA SEMICONDUCTORS 6 of 6