2807N KIA

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150A，75V N-CHANNELMOSFETKIA SEMICONDUCTORS 2807NKIA SEMICONDUCTORS KIA SEMICONDUCTORS 1.Applications n DC-DCconvertersandOff-lineUPS n High efficiency synchronous rectification in SMPS 2.Features n RDS(on)=5.0mΩ@VGS= 10 V n Super high dense cell design n Ultra low On-Resistance n 100% avalanche tested n Lead Free and Green devices avallable (RoHS Compliant) 3. Pinconfiguration 1of7 Rev1.1Jun.2016 Pin Function

1 Gate

2 Drain

3 Source

150A，75V N-CHANNELMOSFETKIA SEMICONDUCTORS 2807NKIA SEMICONDUCTORS KIA SEMICONDUCTORS 4. Absolutemaximumratings (TC=25 ºC,unlessotherwisespecified) Parameter Symbol Ratings Units Drain-sourcevoltage VDSS 75 V Gate-sourcevoltage VGSS ±25 V ContinuousdraincurrenetT C=25 ºC1 ID 150 A ContinuousdraincurrenetT C=100 ºC1 111 A 300uspulseddraincurrenttestedT C=25 ºC2 IDP 600 A Avalancheenergysinglepulse 3 EAS 784 mJ Powerdissipation TC=25 ºC PD 350 W TC=100 ºC 175 W Maximumjunctiontemperature TJ 175 °C Storagetemperaturerange TSTG -55~+175 °C DiodecontinuousforwardcurrentT C=25 ºC1 IS 150 A 5. Thermalcharacteristics Parameter Symbol Rating Unit Thermalresistance,Junction-to-case θJC 0.5 ºC/W 2of7 Rev1.1Jun.2016

150A，75V N-CHANNELMOSFETKIA SEMICONDUCTORS 2807NKIA SEMICONDUCTORS KIA SEMICONDUCTORS 6. Electricalcharacteristics (TC=25°C,unlessotherwisenotes) Parameter Symbol Conditions Min Typ Max Unit OffCharacteristics Drain-sourcebreakdownvoltage BVDSS VGS=0V,ID=250μA 75 - - V Drain-to-sourceleakagecurrent IDSS VDS=75V,V GS=0V - - 1 μA TJ=85 ºC - - 30 μA Gate-to-sourceleakagecurrent IGSS VGS=25V,VDS=0V - - 100 nA VGS=-25V,VDS=0V - - -100 nA Oncharacteristics Gatethresholdvoltage VGS(th) VDS=VGS,I D=250μA 2.0 3.0 4.0 V Staticdrain-sourceon-resistance 4 RDS(on) VGS=10V,ID=75A - 5.0 6.0 mΩ Dynamiccharacteristics 5 Inputcapacitance Ciss VDS=37.5V,VGS=0V,f=1.0MHz - 7200 - pFOutputcapacitance Coss - 700 - Reversetransfercapacitance Crss - 460 - Gateseriesresistance RG VDS=0V,VGS=0V,f=1.0MHz - 1.4 - Ω Totalgatecharge Qg VDS=60V,ID=75A,VGS=10V - 145 - nCGate-sourcecharge Qgs - 42 - Gate-drain(Miller)charge Qgd - 54 - Resistiveswitchingcharacteristics 5 Turn-ondelaytime Td(ON) VDD=37.5V,ID=75A,VGS=10V, RG=3.75Ω - 26 - nSRisetime trise - 96 - Turn-offdelaytime Td(OFF) - 72 - Falltime tfall - 66 - Source-drainbodydiodecharacteristics TJ=25°C,unlessotherwisenotes Diodeforwardvoltage 4 VSD VGS=0V,IS=75A - - 1.2 V Reverserecoverytime trr ISD=75A,diF/dt=100A/μs, - 42 - ns Reverserecoverycharge Qrr - 64 - nC Note:1.Calculatedcontinuouscurrentbasedonmaximumallowablejunctiontemperature.Package limitationcurrentis75A. 2.Pulsewidthlimitedbysafeoperatingarea. 3.LimitedbyT Jmax, IAS=56A,V DD=48V,R G=50Ω,StartingT J=25°C. 4.Pulsetest;Pulsewidth< 300μs;dutycycle< 2%. 5.Guaranteedbydesign,notsubjecttoproductiontesting. 6.KIAfinishedproductspecificationspleasecustomerbeforeplacingorder,shouldobtainthelatest versionofthefinishedproductspecifications. 3of7 Rev1.1Jun.2016

150A，75V N-CHANNELMOSFETKIA SEMICONDUCTORS 2807NKIA SEMICONDUCTORS KIA SEMICONDUCTORS 7.Typicalcharacteristics 4of7 Rev1.1Jun.2016

150A，75V N-CHANNELMOSFETKIA SEMICONDUCTORS 2807NKIA SEMICONDUCTORS KIA SEMICONDUCTORS 5of7 Rev1.1Jun.2016

150A，75V N-CHANNELMOSFETKIA SEMICONDUCTORS 2807NKIA SEMICONDUCTORS KIA SEMICONDUCTORS 6of7 Rev1.1Jun.2016

150A，75V N-CHANNELMOSFETKIA SEMICONDUCTORS 2807NKIA SEMICONDUCTORS KIA SEMICONDUCTORS 8.Testcircuitsandwaveforms 7of7 Rev1.1Jun.2016