2804N KIA

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Technical content

150A，40V N-CHANNELMOSFETKIA SEMICONDUCTORS 2804NKIA SEMICONDUCTORS KIA SEMICONDUCTORS 1.Applications n DC-DCconvertersandOff-lineUPS 2.Features n RDS(on)= 3.0mΩ@VGS= 10 V n Super high dense cell design n Ultra low On-Resistance n Fast recovery body diode n Lead Free and Green devices avallable (RoHS Compliant) 3. Pinconfiguration 1of7 Rev1.0Jun.2016 Pin Function

1 Gate

2 Drain

3 Source

4 Drain

150A，40V N-CHANNELMOSFETKIA SEMICONDUCTORS 2804NKIA SEMICONDUCTORS KIA SEMICONDUCTORS 4. Absolutemaximumratings (TC=25 ºC,unlessotherwisespecified) Parameter Symbol Ratings Units Drain-sourcevoltage VDSS 40 V Gate-sourcevoltage VGSS ±20 V ContinuousdraincurrenetT C=25 ºC1 ID 150 A ContinuousdraincurrenetT C=100 ºC 108 A 300uspulseddraincurrenttestedT C=25 ºC2 IDP 600 A Avalancheenergysinglepulse 3 EAS 400 mJ Powerdissipation TC=25 ºC PD 188 W TC=100 ºC 94 W Maximumjunctiontemperature TJ 175 °C Storagetemperaturerange TSTG -55~+175 °C DiodecontinuousforwardcurrentT C=25 ºC1 IS 150 A 5. Thermalcharacteristics Parameter Symbol Rating Unit Thermalresistance,Junction-to-case θJC 0.8 ºC/W 2of7 Rev1.0Jun.2016

150A，40V N-CHANNELMOSFETKIA SEMICONDUCTORS 2804NKIA SEMICONDUCTORS KIA SEMICONDUCTORS 6. Electricalcharacteristics (TC=25°C,unlessotherwisenotes) Parameter Symbol Conditions Min Typ Max Unit OffCharacteristics Drain-sourcebreakdownvoltage BVDSS VGS=0V,ID=250μA 40 - - V Drain-to-sourceleakagecurrent IDSS VDS=40V,V GS=0V - - 1 μA TJ=85 ºC - - 30 μA Gate-to-sourceleakagecurrent IGSS VGS=20V,VDS=0V - - 100 nA VGS=-20V,VDS=0V - - -100 nA Oncharacteristics Gatethresholdvoltage VGS(th) VDS=VGS,I D=250μA 2.0 3.0 4.0 V Staticdrain-sourceon-resistance 4 RDS(on) VGS=10V,ID=75A - 3.0 4.0 mΩ Dynamiccharacteristics Inputcapacitance Ciss VDS=20V,VGS=0V,f=1.0MHz - 3870 - pFOutputcapacitance Coss - 680 - Reversetransfercapacitance Crss - 363 - Gateseriesresistance RG VDS=0V,VGS=0V,f=1.0MHz - 1.8 - Ω Totalgatecharge Qg VDD=32V,ID=75A,VGS=10V - 95 - nCGate-sourcecharge Qgs - 20 - Gate-drain(Miller)charge Qgd - 30 - Resistiveswitchingcharacteristics Turn-ondelaytime Td(ON) VDD=20V,ID=75A,VGS=10V, RG=4.7Ω - 35 - nSRisetime trise - 106 - Turn-offdelaytime Td(OFF) - 84 - Falltime tfall - 46 - Source-drainbodydiodecharacteristics TJ=25°C,unlessotherwisenotes Diodeforwardvoltage 4 VSD VGS=0V,IS=75A - - 1.2 V Reverserecoverytime trr ISD=75A,diF/dt=100A/μs, - 45 - ns Reverserecoverycharge Qrr - 90 - nC Note:1.Caiculatedcontinuouscurrentbasedonmaximumallowablejunctiontemperature.Limitedby bondingwire. 2.Pulsewidthlimitedbysafeoperatingarea. 3.LimitedbyT Jmax, IAS=40A,V DD=32V,R G=47Ω,StartingT J=25°C. 4.Pulsetest;Pulsewidth< 300μs;dutycycle< 2%. 5.Guaranteedbydesign,notsubjecttoproductiontesting. 6.KIAfinishedproductspecificationspleasecustomerbeforeplacingorder,shouldobtainthelatest versionofthefinishedproductspecifications. 3of7 Rev1.0Jun.2016

150A，40V N-CHANNELMOSFETKIA SEMICONDUCTORS 2804NKIA SEMICONDUCTORS KIA SEMICONDUCTORS 7.Typicalcharacteristics 4of7 Rev1.0Jun.2016

150A，40V N-CHANNELMOSFETKIA SEMICONDUCTORS 2804NKIA SEMICONDUCTORS KIA SEMICONDUCTORS 5of7 Rev1.0Jun.2016

150A，40V N-CHANNELMOSFETKIA SEMICONDUCTORS 2804NKIA SEMICONDUCTORS KIA SEMICONDUCTORS 6of7 Rev1.0Jun.2016

150A，40V N-CHANNELMOSFETKIA SEMICONDUCTORS 2804NKIA SEMICONDUCTORS KIA SEMICONDUCTORS 8.Testcircuitsandwaveforms 7of7 Rev1.0Jun.2016