26T

26T NELLSEMI

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Technical content

www.nellsemi.com Page 1 of 6 SEMICONDUCTOR 26T Series RoHS RoHS GA2 TRIACs, 25A 1 2 3 TO-220AB (lnsulated) (26TxxAI) TO-220AB (non-Insulated) SYMBOL IT(RMS)RMS on-state current (full sine wave) TO-3P UNITVALUE ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITIONS T = 105ºCc G 2TO-263 (D PAK) (26TxxH)

FEATURES

APPLICATIONS

Low thermal resistance with clip bonding Low thermal resistance insulation ceramic for insulated TO-220AB & TO-3P package High commutation (4 quadrant) or very High commutation (3 quadrant) capability 26T series are UL certified (File ref: E320098) MAIN FEATURES SYMBOL VALUE UNIT IT(RMS) V /VDRM RRM IGT(Q1) 25 A V mA35 to 50 600 to 1200 A1 A2 G TO-3P (Insulated) (26TxxBI) (26TxxA) A1 A2 G TO-3P (non-Insulated) (26TxxB) Snubberless and Standard Packages are RoHS compliant Applications include the ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits, etc., or for phase control operation in light dimmers, motor speed controllers, and silmilar. The snubberless versions are especially recommended for use on inductive loads, due to their high commutation performances. The 26T series provides an insulated tab (rated at 2500V ). RMS ITSM Non repetitive surge peak on-state current (full cycle, T initial = 25°C)j A I t22I t Value for fusing 340 2A s dI/dt Critical rate of rise of on-state current I = 2xl , t ≤100nsG GT r IGMPeak gate current 4 PG(AV)Average gate power dissipation 1 W A/µs A A 250 260 F =50 Hz F =60 Hz t = 20 ms t = 16.7 ms t = 10 msp F =100 Hz T =125ºCj T =125ºCj T =125ºCj T =20 µsp TO-220AB insulated T = 75ºCc TstgStorage temperature range Operating junction temperature range - 40 to + 150 - 40 to + 125 ºC Tj TO-263/TO-220AB/TO-3P insulated T = 100ºCc 2(A2) 3(G) 1(A1)

www.nellsemi.com Page 2 of 6 SEMICONDUCTOR RoHS RoHS 26T Series I - II - III IV MAX. 100 mA ALL ALL MAX. I - III - IV MAX. mA II MIN. MIN. V (2)TM MAX. Vt0(2) Threshold voltage MAX. Dynamic resistance MAX. IDRM IRRM MAX. mA Note 1: Minimum l is guaranted at 5% of l max.GT GT Note 2: For both polarities of A2 referenced to A1. QUADRANT 26Txxxx V = 12 V, R = 30ΩD L V = V , R = 3.3KΩ, D DRM L T = 125°Cj I = 500 mAT I = 1.2 IG GT V = 67% V , gate open, T = 125°CD DRM j (dI/dt)c =13.3 A/ms, T = 125°Cj 1.3 0.2 V V mA V/µs V/µs 160 500 I = 35 A, TM t = 380 µsP T = 125°Cj T = 25°Cj T = 125°Cj T = 125°Cj T = 25°Cj 1.55 0.85 V V µA mΩ STATIC CHARACTERISTICS UNITVALUE UNITTEST CONDITIONS TEST CONDITIONS SYMBOL SYMBOL Standard (4 quadrants) I (1)GT VGT VGD (2)IH (2)dV/d t IL (2)(dV/dt)c (2)Rd B (T ºC unless otherwise specified)J= 25 ELECTRICAL CHARACTERISTICS V = VD DRM V = VR RRM 26Txxxx Unit I (1)GT I - II - III VGT I - II - III VGD I - II - III (2)IH MAX. I - III MAX. mA II (2)dV/dt MIN. (dI/dt)c (2) A/ms IL MAX. MIN. V = 12 V, R = 30ΩD L V = V , R = 3.3KΩD DRM L T = 125°Cj I = 500 mAT I = 1.2 IG GT V = 67% V gate open ,T = 125°CD DRM, j Without snubber, T = 125°Cj 1.3 0.2 100 1000 mA V V mA V/µs TEST CONDITIONS QUADRANTSYMBOL BW 500 CW SNUBBERLESS and Logic level (3 quadrants) (T ºC unless otherwise specified)J= 25 ELECTRICAL CHARACTERISTICS THERMAL RESISTANCE Rth(j-c) Junction to case (AC) 0.8 UNITVALUESYMBOL TO-3P TO-263/TO-220AB 0.6 Rth(j-a) Junction to ambient 1.7 °C/W TO-3P Insulated TO-220AB Insulated TO-220AB Insulated, TO-220AB 0.9 2S = 1 cm TO-263 TO-3P, TO-3P Insulated S = Copper surface under tab.

ORDERING INFORMATION

ORDERING TYPE MARKING PACKAGE WEIGHT ,BASE Q TY DELIVERY MODE TO-220AB 2.0g 50 Tube SEMICONDUCTOR RoHS RoHS 26T Series PRODUCT SELECTOR PART NUMBER VOLTAGE (xx) SENSITIVITY PACKAGE 600 V 50 mA 35 mA 50 mA 1200 V 26TxxA-B/ 26TxxAl-B 26TxxA-CW/26TxxAl-CW 26TxxA-BW/26TxxAl-BW TYPE TO-220AB TO-220ABSnubberless V V V V V V 800 V V V V AI: Insulated TO-220AB package Standard Snubberless BI: Insulated TO-3P package 50 mA26TxxB-B/26TxxBl-B TO-3PVV VV VV V V V 35 mA 50 mA Snubberless26TxxB -CW/26TxxBl-CW 26TxxB -BW/26TxxBl-BW Snubberless 50 mA26TxxH-B VV VV VV V V V 35 mA 50 mA Snubberless26TxxH -CW 26TxxH -BW Snubberless 2D PAK 2D PAK 1000 V V V V V V V V V V Standard Standard 2D PAK TO-3P TO-3P TO-220AB www.nellsemi.com Page 3 of 6 ORDERING INFORMATION SCHEME Triac series Current Voltage 26 = 25A 06 = 600V 08 = 800V BW = 50mA Snubberless Package type 10 = 1000V A = TO-220AB (non-insulated) AI = TO-220AB ( insulated) I Sensitivity GT 2H = TO-263 (D PAK) B = TO-3P (non-insulated) BI = TO-3P ( )insulated CW = 35mA Snubberless 12 = 1200V

26 T 06 A - BW

B = 50mA Standard 26TxxAI-yy 26TxxAI-yy 2.3g 50 Tube 26TxxB-yy 26TxxB-yy TO-3P 4.3g 30 26TxxBI-yy 26TxxBI-yy 4.8g 30 Tube Note: xx = voltage, yy = sensitivity 26TxxH-yy 26TxxH-yy 2D PAK 2.0g 50 TO-3P (insulated) TO-220AB (insulated) Tube Tube

www.nellsemi.com Page 4 of 6 26T Series Fig.1 Maximum power dissipation versus RMS on-state current (full cycle) Fig.2 RMS on-state current versus case temperature (full cycle) P (W) I (A)T(RMS) 125100755025 2Fig.3 D PAK RMS on-state current versus ambient temperature (printed circuit board FR4, copper thickness: 35µm)(full cycle) Fig.4 Relative variation of thermal impedance versus pulse duration. 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 1E-3 1E-2 1E-1 1E+0 K=[Z /R ]th th 5E+21E+21E+11E+01E-11E-20 25 50 75 100 125 I (A)T(RMS) 100 I (A) Fig.5 On-state characteristics (maximum values). 100 150 200 250 I (A)TSM Fig.6 Surge peak on-state current versus number of cycles. 1 10 100 1000 300 I (A)T(RMS) 0 5 10 15 20 25 TO-220AB ( )insulated TO-220AB TO-263 TO-3P(insulated) TO-3P T (°C)C 4.0

2 D PAK

2(S=1cm ) T (°C)amb Zth(j-c) TO-263AB TO-220AB TO-220AB (insulated) Zth(j-a) TO-3P(insulated) tp(s)1E-3 300 T max.j V = 0.85 Vto R = 16 mΩd T =T maxj j T =25°Cj V (V)TM Number of cycles Repetitive T =75°Cc Non repetitive T initial=25°Cj t=20ms One cycle Zth(j-a)

www.nellsemi.com Page 5 of 6 26T Series 100 1000 3000 -40 -20 0 20 40 60 80 100 120 140 0.0 0.5 1.0 1.5 2.0 2.5 Fig.9 Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values). Fig.7 Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms.2 and corresponding value of l t. Fig.8 Relative variation of gate trigger current,holding current and latching current versus junction temperature (typical values). 2 2l (A), l t(A s)TSM l ,l ,l [T ] / l ,l ,l [T =25°C]GT H L j GT H L j 0.4 0.8 1.2 1.6 2.4 2.0 2.2 (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c 0.1 1.0 10.0 100.0 0.01 0.10 1.00 10.00 Fig.10 Relative variation of critical rate of decrease of main current versus Tj 0 4 8 12 2016 0 25 50 75 100 125 2Fig.11 D PAK thermal resistance junction to ambient versus copper surface under tab (printed circuit board FR4, copper thickness: 35µm) Rth(j-a)(°C/W) 24 3228 36 40 t (ms)p 2I t ITSM T initial=25°Cj dI/dt limitation: 50A/µs I & IH L IGT T (°C)j CW/BWB (dV/dt)c (V/µs) 1.8 1.4 1.0

0.6 T (°C)j

2S(cm ) TO-263

www.nellsemi.com Page 6 of 6 SEMICONDUCTOR RoHS RoHS Case Style 26T Series 2.87 (0.113) 2.62 (0.103) 9.40 (0.370) 9.14 (0.360) 10.54 (0.415) MAX. 16.13 (0.635) 15.87 (0.625) PIN 4.06 (0.160) 3.56 (0.140) 1.45 (0.057) 1.14 (0.045) 2.67 (0.105) 2.41 (0.095) 2.65 (0.104) 2.45 (0.096) 5.20 (0.205) 4.95 (0.195) 0.90 (0.035) 0.70 (0.028) 3.91 (0.154) 3.74 (0.148) 4.70 (0.185) 4.44 0.1754 ( ) 1.39 (0.055) 1.14 (0.045) 3.68 (0.145) 3.43 (0.135) 8.89 (0.350) 8.38 (0.330) 29.16 (1.148) 28.40 (1.118) 14.22 (0.560) 13.46 (0.530) 0.56 (0.022) 0.36 (0.014) 2.79 (0.110) 2.54 (0.100) 15.32 (0.603) 14.55 (0.573) TO-220AB 2TO-263(D PAK) 2.79 (0.110) 0.36 (0.014) 2.79 (0.110) 2.29 (0.090) 1.40 (0.055) 1.19 (0.047) 0 to 0.254 (0 to 0.01) 1.40 (0.055) 1.14 (0.045) 4.83 (0.190) 4.06 (0.160) 10.45 (0.411) 9.65 (0.380) 6.22 (0.245) 9.14 (0.360) 8.13 (0.320) 15.00 (0.591) 0.940 (0.037) 0.686 (0.027) 2.67 (0.105) 2.41 (0.095) 5.20 (0.205) 4.95 (0.195) 15.85 (0.624) 3.56 (0.140) 0.53 (0.021) TO-3P 2.90 (0.114) 2.70 (0.106) 0.70 (0.028) 0.50 (0.020) 1.55 (0.061) 1.45 (0.057) 4.60 (0.181) 4.40 (0.173) 5.65 (0.222) 5.40 (0.213) 5.65 (0.222) 5.40 (0.213) 15.60 (0.614) 14.35 (0.565) 16.50 (0.650) 15.80 (0.622) 21.10 (0.831) 20.40 (0.803) Φ4.17 (0.164) 4.08 (0.160) 15.50 (0.610) 15.10 (0.594) R 4.60 (0.181) 3.65 (0.144) 3.40 (0.134) 1.40 (0.055) 1.20 (0.047) 1 2 3 2(A2) 3(G) 1(A1)