25N06 ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor 25N06
- FEATURES
- Drain Current I D= 25A@ TC=25℃
- Drain Source Voltage : V DSS= 60V(Min)
- Static Drain-Source On-Resistance : R DS(on) = 0.065Ω(Max)
- Fast Switching
- APPLICATIONS
- Switching regulators
- Switching converters,motor drivers,relay drivers
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 25 A IDM Drain Current-Single Plused 80 A PD Total Dissipation @TC=25℃ 75 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃
- THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.25 ℃/W PDF pdfFactory Pro www.fineprint.cn
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 2 isc N-Channel MOSFET Transistor 25N06
- ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID=250µA 60 V VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA 2.0 4.0 V VSD Diode Forward On-voltage IS= 25A ;VGS= 0 1.5 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 12.5A 0.065 Ω IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS=60V; VGS= 0 10 µA PDF pdfFactory Pro www.fineprint.cn