25DR

25DR NELLSEMI

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High surge current capability Stud cathode and stud anode version Wide current range TYPICAL APPLICATIONS SEMICONDUCTOR RoHS RoHS Page 1 of 5 Glass Passivated Standard Recovery Diodes Nell High Power Products Voltage up to 1600V VRRM RoHS compliant 25D(R)Series (Stud Version), 25A DO-203AA(DO-4) Battery charges Converters Power supplies Machine tool controls PRODUCT SUMMARY IF(AV) 25A MAJOR RATINGS AND CHARACTERISTICS PARAMETER UNIT VVRRM IFSM IF(AV) 2I t TJ 2A s A A ºC TEST CONDITIONS VALUES IF(RMS) TC ºC A 120 356 373 634 578 200 to 1600 -65 to 175 50 HZ 60 HZ 50 HZ 60 HZ Range ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS VOLTAGETYPE NUMBER CODE VRRM,MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM,MAXIMUM NON-REPETITIVE PEAK VOLTAGE V VR(BR),MIMIMUM AVALANCHE VOLTAGE V(1) VRRM,MAXIMUM AT TJ=175°C mA 25D( R ) 200 400 600 800 1000 1200 1600 275 500 725 950 1200 1400 1800 500 750 950 1150 1350 (1) Avalanche version only available from VRRM 400V to 1600V Note 1750 Glass passivated chips www.nellsemi.com

THERMAL AND MECHANICAL SPECIFCATIONS TEST CONDITIONS VALUES Maximum average forward current at case temperature IF(AV) 180 ° conduction, half sine wave IF(RMS)Maximum RMS forward current 25 A 120 ºC K/WMaximum on-repetitive peak reverse power 10μs square pulse, T J = TJ maximum Maximum peak, one-cycle forward, non-reptitive surge current IFSM t = 10ms t = 8.3 ms t = 10ms t = 8.3 ms t = 10ms t = 8.3 ms t = 10ms t = 8.3 ms No voltage reapplied 100%V RRM reapplied No voltage reapplied 100%V RRM reapplied 2I t Sinusoidal half wave, initial T J = TJ maximum 356 373 300 314 634 578 450 410 2A s A A 6337t = 0.1 to 10 ms, no voltage reapplied 2I √t Maximum l²t for fusing Maximum l² √t for fusing Maximum forward voltage drop VFM 1.30 2A √s Vlpk = 78 A, T J = 25˚C, t p = 400µs rectangular wave (1) Avalanche only for avalanche version, all other parameters the same as 25D Note PARAMETER SYMBOL UNITSTEST CONDITIONS VALUES Maximum junction operating temperature range Maximum storage temperature range - 65 to175 - 65 to 200 ºC 0.5 K/W Maximum thermal resistace, junction to case Maximum thermal resistance case to heatsink 1.5 (13) (10) 0.21 (lbf · in) N · m Allowable mounting torque Approximate weight Case style DO-203AA (DO-4) TJ Tstg RthJC RthCS (lbf · in) N · m g oz. Not lubricated threads Lubricated threads Mounting surface, smooth, flat and greased DC operation See dimensions - link at the end of datasheet PR (1) 1.5 +0 -10% 1.2 -10% ΔRthJC CONDUCTION CONDUCTION ANGEL SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION UNITSTEST CONDUCTIONS K/W 180˚ 120˚ 90˚ 60˚ 30˚ 0.28 0.39 0.50 0.73 1.20 0.24 0.41 0.54 0.75 1.21 TJ = TJ maximum

• The table above shows the increment of thermal resistance RthJC when devices Note operate at different conduction angles than DC Page 2 of 5www.nellsemi.com SEMICONDUCTOR RoHS RoHS Nell High Power Products 25D(R)Series

Maximum Allowable Case Temperature(˚C) 180 170 160 150 140 130 120 110 100 0 5 10 20 25 3015 0 5 10 15 20 25 30 35 40 45 180 170 160 150 140 130 120 110 100 0 5 10 15 20 25 30 25 50 75 Maximum Average Forward Power Loss (W) Average Forward Current (A) Average Forward Current (A) Average Forward Current (A) Maximum Allowable Ambient Temperature (°C) Fig. 3 Forward Power Loss Characteristics Fig.1 Current Ratings Characteristics Fig.2 Current Ratings Characteristics 30° 60° 90° 120 ° 180 ° 60° 30° 60° 120 ° 180 ° 100 125 150 175 Maximum Allowable Case Temperature(˚C) 10K/W 20K/ W 30K/W Maximum Average Forward Power Loss (W) Fig. 4 Forward Power Loss Characteristics Average Forward Current (A) Maximum Allowable Ambient Temperature (°C) 50 2510 20 25 3015 7550 100 120 ° 90° 30° 180 ° 25D（R） Series RthJC (DC)=1.5K/W Conduction Angle 25D（R） Series RthJC (DC)=1.5K/W Conduction Period 90° DC 2K/W R thSA = 1K/W-De lta R 3K/W 4K/W 6K/W 8K/W 12K/W 20K/W 40K/W RMS Limit 25D（R） Series T = 175 ˚CJ Conduction Angle RthS A = 4K/W-Delta R 6K/W 15K/W DC 90° 60° 120 ° 180 ° 30° RMS Limit T = 175 °CJ 25D（R） Series Conduction Period 8K/ W Page 3 of 5www.nellsemi.com SEMICONDUCTOR RoHS RoHS Nell High Power Products 25D(R)Series

Peak Half Sine Wave Forward Current (A) Instantaneous Forward Current (A) Peak Half Sine Wave Forward Current (A) Transient Thermal Impedance ZthJC (K/W) 150 Fig. 5 Maximum Non-Repetitive Surge Current Fig. 7 Forward Voltage Drop Characteristics Fig.6 Maximum Non-Repetitive Surge Current Fig.8 Thermal Impedance ZthJC Characteristics 1 10 100 100 200 250 300 350 100 1000 0 0.5 1 1.5 2 2.5 3 3.5 4 0.01 0.1 1 10 100 150 200 250 300 350 400 1010.10.010.001 0.1 Number Of Equal Amplitude Half Cycle current Pulses(N) Instantaneous Forward Voltage (V) Pulse Train Duration (S) Square Wave Pulse Duration (s) ORDERING INFORMATION TABLE 1 - Current rating: Code = IF (AV) 2 - D = Standard recovery device 3 - None = Stud normal polarity (cathode to stud) R = Stud reverse polarity (anode to stud) Device code D M25 R 12 1 2 3 4 5 - Voltage code × 100 = VRRM (see Voltage Ratings table) - None = Stud base DO-203AA (DO-4) #10-32 UNF-2A M = Stud base DO-203AA (DO-4) M5×0.8 (not available for avalanche diodes) Initial T = 175°CJ @60 Hz 0.0083 s @50 Hz 0.0100 s 25D（R） Series At Any Rated Load Condition And With At Rated VRRM Applied Following Surge. 25D（R） Series Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Initial T = 175°CJ No Voltage Reapplied Reted VRRM Reapplied T = 25 °CJ T = 175 °CJ 25D（R） Series Steady State Value RthJC = 1.5K/W (DC Operation) 25D（R） Series Page 4 of 5www.nellsemi.com SEMICONDUCTOR RoHS RoHS Nell High Power Products 25D(R)Series

(0.45/0.48) 11.6/12.4 10.6/11.2 (0.41/0.44) (0.02/0.04) 0.5/1.0 Ø8.5/Ø8.9 (Ø0.33/Ø0.35) Ø1.5/Ø1.7 Ø0.05/Ø0.06 5.0/5.6 (0.19/0.22) #10-32 UNF-2A For metric devices: M5 x 0.8 10.5/11.5 (0.41/0.45) 20.0/21.0 (0.78/0.82) 9.6/10.1 (0.37/0.39) 3.7/4.3 (0.14/0.16) Page 5 of 5www.nellsemi.com SEMICONDUCTOR RoHS RoHS Nell High Power Products 25D(R)Series