24N50H KIA
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Technical content
24A，500V N-CHANNELMOSFETKIA SEMICONDUCTORS 24N50HKIA SEMICONDUCTORS KIA SEMICONDUCTORS 1.Description ThisPowerMOSFETisproducedusingKIAadvancedplanarstripeDMOStechnology.Thisadvanced technologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitching performance,andwithstandhighenergypulseintheavalancheandcommutationmode.Thesedevices arewellsuitedforhighefficiencyswitchedmodepowersupplies,activepowerfactorcorrectionbasedon halfbridgetopology. 2.Features n RDS(ON)=0.16Ω@VGS=10V n Lowgatecharge(typical90nC) n Highruggedness n Fastswitching n 100%avalanchetested n Improveddv/dtcapability 3. Pinconfiguration 1of5 Rev1.1JAN2014 Pin Function
1 Gate
2 Drain
3 Source
24A，500V N-CHANNELMOSFETKIA SEMICONDUCTORS 24N50HKIA SEMICONDUCTORS KIA SEMICONDUCTORS 4. Absolutemaximumratings (TC=25 ºC,unlessotherwisespecified) Parameter Symbol Ratings Units Drain-sourcevoltage VDSS 500 V Gate-sourcevoltage VGSS ±30 V Draincurrenetcontinuous Tc=25°C ID 24 A Tc=100°C 15 A Draincurrentpulsed(note1) IDM 96 A Avalancheenergy Repetitive(note1) EAR 29 mJ Singlepulse(note2) EAS 1150 mJ Peakdioderecoverydv/dt(note3) dv/dt 4.5 V/ns Totalpowerdissipation Tc=25°C PD 290 W Derateabove25 °C 2.33 W/°C Operatingandstoragetemperaturerange TJ，TSTG -55~+150 °C Maximumleadtemperatureforsolderingpurposes, 1/8”fromcasefor5seconds TL 300 °C 5. Thermalcharacteristics Parameter Symbol Typ Max Units Thermalresistancejunction-ambient RthJA - 40 °C/WThermalresistance,case-to-sinktyp. RthCS 0.24 - Thermalresistancejunction-case RthJC - 0.43 2of5 Rev1.1JAN2014
24A，500V N-CHANNELMOSFETKIA SEMICONDUCTORS 24N50HKIA SEMICONDUCTORS KIA SEMICONDUCTORS 6. Electricalcharacteristics (TJ=25°C,unlessotherwisenoted) Note：1.Repetitiverating:pulsewidthlimitedbymaximumjunctiontemperature 2.L=3.4mH,I AS=24A,V DD=50V,R G=25 Ω,startingT J=25°C 3.I SD≤24A,di/dt ≤200A/μs,V DD≤BVDSS,startingT J=25°C 4.Pulsetest:pulsewidth ≤300μs,dutycycle ≤2% 5.Essentiallyindependentofoperatingtemperature 3of5 Rev1.1JAN2014 Parameter Symbol TestConditions Min Typ Max Units Offcharacteristics Drain-sourcebreakdownvoltage BVDSS VGS=0V,ID=250μA 500 - - V Zerogatevoltagedraincurrent IDSS VDS=500V,VGS=0V - - 1 μA VDS=400V,TC=125℃ - - 10 μA Gate-bodyleakage current Forward IGSS VGS=30V,VDS=0V - - 100 nA Reverse VGS=-30V,VDS=0V - - -100 nA Breakdownvoltagetemperature coefficient △BVDSS/△TJ ID=250μA, referencedto25 ℃ - 0.5 - V/°C Oncharacteristics Gatethresholdvoltage VGS(TH) VDS=VGS,I D=250μA 2.0 - 4.5 V Staticdrain-sourceon-resistance RDS(ON) VGS=10V,ID=12A - 0.16 0.2 Ω Dynamiccharacteristics Inputcapacitance CISS VDS=25V,VGS=0V, f=1MHZ - 3500 - pF Outputcapacitance COSS - 520 - pF Reversetransfercapacitance CRSS - 55 - pF Switchingcharacteristics Turn-ondelaytime tD(ON) VDD=250V,ID=24A, RG=25Ω(note4,5) - 100 - ns Risetime tR - 250 - ns Turn-offdelaytime tD(OFF) - 200 - ns Falltime tF - 150 - ns Totalgatecharge QG VDS=400V,I D=24A, VGS=10V(note4,5) - 90 - nC Gate-sourcecharge QGS - 22 - nC Gate-draincharge QGD - 45 - nC Drain-sourcediodecharacteristics Drain-sourcediodeforwardvoltage VSD VGS=0V,ISD=24A - - 1.5 V Continuousdrain-sourcecurrent IS - - 24 A Pulseddrain-sourcecurrent ISM - - 96 A Reverserecoverytime tRR VGS=0V,IS=24A, dlF/dt=100A/μs(note4) - 400 - ns Reverserecoverycharge QRR - 4.3 - μC
24A，500V N-CHANNELMOSFETKIA SEMICONDUCTORS 24N50HKIA SEMICONDUCTORS KIA SEMICONDUCTORS 7.Testcircuitsandwaveforms 4of5 Rev1.1JAN2014
24A，500V N-CHANNELMOSFETKIA SEMICONDUCTORS 24N50HKIA SEMICONDUCTORS KIA SEMICONDUCTORS 5of5 Rev1.1JAN2014