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  • Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
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Technical content

Features

  • T r e n c h 4 I G B T s
  • Robust and soft freewheeling diodes in CAL technology
  • Highly reliable spring contacts for electrical connections
  • UL recognised: File no. E63532 Typical Applications*
  • 4 Q i n v e r t e r s Remarks
  • Max. case temperature limited to TC=125°C
  • Short circuit behavi our of one leg must be verified in the final application Absolute Maximum Ratings Symbol Conditions Values Unit IGBT 1 - 6 VCES Tj =2 5° C 1200 V IC Tj = 150 °C Ts =2 5° C 24 A Ts =7 0° C 20 A IC Tj = 175 °C Ts =2 5° C 24 A Ts =7 0° C 23 A ICnom 15 A ICRM ICRM = 3 x ICnom 45 A VGES -20 ... 20 V tpsc VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj =1 5 0° C 10 µs Tj -40 ... 175 °C IGBT 7 - 12 VCES Tj =2 5° C 1200 V IC Tj = 150 °C Ts =2 5° C 37 A Ts =7 0° C 29 A IC Tj = 175 °C Ts =2 5° C 41 A Ts =7 0° C 34 A ICnom 25 A ICRM ICRM = 3 x ICnom 75 A VGES -20 ... 20 V tpsc VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj =1 5 0° C 10 µs Tj -40 ... 175 °C Diode 1 - 6 VRRM Tj =2 5° C 1200 V IF Tj = 150 °C Ts =2 5° C 20 A Ts =7 0° C 15 A IF Tj = 175 °C Ts =2 5° C 23 A Ts =7 0° C 19 A IFnom 15 A IFRM IFRM = 3xIFnom 45 A IFSM 10 ms, sin 180°, Tj =1 5 0° C 6 5 A Tj -40 ... 175 °C Diode 7 - 12 VRRM Tj =2 5° C 1200 V IF Tj = 150 °C Ts =2 5° C 29 A Ts =7 0° C 22 A IF Tj = 175 °C Ts =2 5° C 32 A Ts =7 0° C 26 A IFnom 25 A IFRM IFRM = 3 x IFnom 75 A IFSM 10 ms, sin 180°, Tj =1 5 0° C 1 0 0 A Tj -40 ... 175 °C Module It(RMS) 20 A per spring 40 A Tstg -40 ... 125 °C Visol AC sinus 50 Hz, 1 min 2500 V

2 Rev. 3 – 02.04.2015 © by SEMIKRON MiniSKiiP® 2 ACC Twin 6-pack SKiiP 23ACC12T4V10 Target Data

  • T r e n c h 4 I G B T s
  • Robust and soft freewheeling diodes in CAL technology
  • Highly reliable spring contacts for electrical connections
  • UL recognised: File no. E63532 Typical Applications*
  • 4 Q i n v e r t e r s Remarks
  • Max. case temperature limited to TC=125°C
  • Short circuit behavi our of one leg must be verified in the final application Characteristics Symbol Conditions min. typ. max. Unit IGBT 1 - 6 VCE(sat) IC =1 5A VGE =1 5V chiplevel Tj =2 5° C 1.85 2.10 V Tj =1 5 0° C 2.25 2.45 V VCE0 chiplevel Tj =2 5° C 0.8 0.9 V Tj =1 5 0° C 0.7 0.8 V rCE VGE =1 5V chiplevel Tj =2 5° C 70 80 m Ω Tj =1 5 0° C 103 110 m Ω VGE(th) VGE =V CE V, IC =1m A 55 . 8 6 . 5 V ICES VGE =0V VCE = 1200 V Tj =2 5° C 0.1 0.3 mA mA Cies VCE =2 5V VGE =0V f=1M H z 0.90 nF Coes f=1M H z 0.08 nF Cres f=1M H z 0.06 nF QG VGE = - 8 V...+ 15 V 85 nC RGint Tj =2 5° C 0 Ω td(on) VCC = 600 V IC =1 5A RG on =3 9 Ω RG off =3 9 Ω di/dton =4 0 0A / µ s di/dtoff =2 0 0A / µ s VGE = +15/-15 V Tj =1 5 0° C 31 ns tr Tj =1 5 0° C 30 ns Eon Tj =1 5 0° C 1.65 mJ td(off) Tj =1 5 0° C 315 ns tf Tj =1 5 0° C 66 ns Eoff Tj =1 5 0° C 1.5 mJ Rth(j-s) per IGBT, λpaste=0.8 W/K*m 1.3 K/W IGBT 7 - 12 VCE(sat) IC =2 5A VGE =1 5V chiplevel Tj =2 5° C 1.85 2.10 V Tj =1 5 0° C 2.25 2.45 V VCE0 chiplevel Tj =2 5° C 0.8 0.9 V Tj =1 5 0° C 0.7 0.8 V rCE VGE =1 5V chiplevel Tj =2 5° C 42 48 m Ω Tj =1 5 0° C 62 66 m Ω VGE(th) VGE =V CE V, IC =1m A 55 . 8 6 . 5 V ICES VGE =0V VCE = 1200 V Tj =2 5° C 0.1 0.3 mA mA Cies VCE =2 5V VGE =0V f=1M H z 1.43 nF Coes f=1M H z 0.12 nF Cres f=1M H z 0.09 nF QG VGE = - 8 V...+ 15 V 142 nC RGint Tj =2 5° C 0 Ω td(on) VCC = 600 V IC =2 5A RG on =3 9 Ω RG off =3 9 Ω di/dton =4 6 5A / µ s di/dtoff =3 5 0A / µ s VGE = +15/-15 V Tj =1 5 0° C 44 ns tr Tj =1 5 0° C 46 ns Eon Tj =1 5 0° C 3.7 mJ td(off) Tj =1 5 0° C 330 ns tf Tj =1 5 0° C 62 ns Eoff Tj =1 5 0° C 2.4 mJ Rth(j-s) per IGBT, λpaste=0.8 W/K*m 1K / W

© by SEMIKRON Rev. 3 – 02.04.2015 3 MiniSKiiP® 2 ACC Twin 6-pack SKiiP 23ACC12T4V10 Target Data

  • T r e n c h 4 I G B T s
  • Robust and soft freewheeling diodes in CAL technology
  • Highly reliable spring contacts for electrical connections
  • UL recognised: File no. E63532 Typical Applications*
  • 4 Q i n v e r t e r s Remarks
  • Max. case temperature limited to TC=125°C
  • Short circuit behavi our of one leg must be verified in the final application Characteristics Symbol Conditions min. typ. max. Unit Diode 1 - 6 VF = VEC IF =1 5A VGE =0V chiplevel Tj =2 5° C 2.4 2.7 V Tj =1 5 0° C 2.4 2.8 V VF0 chiplevel Tj =2 5° C 1.3 1.5 V Tj =1 5 0° C 0.9 1.1 V rF chiplevel Tj =2 5° C 72 81 m Ω Tj =1 5 0° C 103 111 m Ω IRRM IF =1 5A di/dtoff =5 0 0A / µ s VGE =- 1 5V VR = 600 V Tj =1 5 0° C 12 A Qrr Tj =1 5 0° C 2µ C Err Tj =1 5 0° C 0.79 mJ Rth(j-s) per Diode, λpaste=0.8 W/K*m 1.92 K/W Diode 7 - 12 VF = VEC IF =2 5A VGE =0V chiplevel Tj =2 5° C 2.4 2.7 V Tj =1 5 0° C 2.5 2.8 V VF0 chiplevel Tj =2 5° C 1.3 1.5 V Tj =1 5 0° C 0.9 1.1 V rF chiplevel Tj =2 5° C 44 50 m Ω Tj =1 5 0° C 62 68 m Ω IRRM IF =2 5A di/dtoff =6 4 0A / µ s VGE =- 1 5V VCC = 600 V Tj =1 5 0° C 19 A Qrr Tj =1 5 0° C 4µ C Err Tj =1 5 0° C 1.64 mJ Rth(j-s) per Diode, λpaste=0.8 W/K*m 1.52 K/W Module Ms to heat sink 2 2.5 Nm w5 5 g Temperature Sensor R100 Tr=100°C (R25=1000Ω) 1670 ± 3% Ω R(T) R(T)=1000Ω[1+A(T-25°C)+B(T-25°C)2

4 Rev. 3 – 02.04.2015 © by SEMIKRON IGBT 1-6 - Fig. 1: Typ. output characteristic IGBT 1-6 - Fig. 2: Typ. rated current vs. temperature I C = f(TS) IGBT 1-6 - Fig. 3: Typ. turn-on /-off energy = f(I IGBT 1-6 - Fig. 4: Typ. turn-on /-off energy = f(R IGBT 1-6 - Fig. 5: Typ. transfer characteristic IGBT 1-6 - Fig. 6: Typ. gate charge characteristic

© by SEMIKRON Rev. 3 – 02.04.2015 5 IGBT 1-6 - Fig. 7: Typ. switching times vs. IC IGBT 1-6 - Fig. 8: Typ. switching times vs. gate resistor R G IGBT 1-6 - Fig. 9: Transient thermal impedance of IGBT and Diode IGBT 1-6 - Fig. 10: CAL diode forward characteristic IGBT 1-6 - Fig. 11: Typ. CAL diode peak reverse recovery current IGBT 1-6 - Fig. 12: Typ. CAL diode recovery charge

6 Rev. 3 – 02.04.2015 © by SEMIKRON IGBT 7-12 - Fig. 1: Typ. output characteristic IGBT 7-12 - Fig. 2: Typ. rated current vs. temperature I C = f(TS) IGBT 7-12 - Fig. 3: Typ. turn-on /-off energy = f(I IGBT 7-12 - Fig. 4: Typ. turn-on / -off energy = f(R IGBT 7-12 - Fig. 5: Typ. transfer characteristic IGBT 7-12 - Fig. 6: Typ. gate charge characteristic

© by SEMIKRON Rev. 3 – 02.04.2015 7 IGBT 7-12 - Fig. 7: Typ. switching times vs. IC IGBT 7-12 - Fig. 8: Typ. switching times vs. gate resistor R G IGBT 7-12 - Fig. 9: Transient thermal impedance of IGBT and Diode IGBT 7-12 - Fig. 10: CAL diode forward characteristic IGBT 7-12 - Fig. 11: Typ. CAL diode peak reverse recovery current IGBT 7-12 - Fig. 12: Typ. CAL diode recovery charge

8 Rev. 3 – 02.04.2015 © by SEMIKRON This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staf f. pinout, dimensions pinout