2304 KIA
Document overview
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Technical content
2.5A， 30V N-CHANNELMOSFETKIA SEMICONDUCTORS 2304KIA SEMICONDUCTORS KIA SEMICONDUCTORS 1.Features n VDS=30V,RDS(on)=0.055Ω@VGS=10V,ID=2.5A n VDS=30V,RDS(on)=0.080Ω@VGS=4.5V,ID=2.0A n Power MOSFET n 100% Rg tested 2.Symbol 3. Absolutemaximumratings (TA=25°C,unlessotherwisenoted) Parameter Symbol Rating Units Drain-sourcevoltage VDS 30 V Gate-sourcevoltage VGS +12 V Draincurrentcontinuous(T J=150 ºC) a,b TA=25°C ID 2.5 A TA=70°C 2.0 Pulseddraincurrent a IDM 10 Continuoussourcecurrent(diodeconduction) a,b IS 1.25 Powerdissipation a,b TA=25°C PD 1.25 W TA=70°C 0.8 Junctionandstoragetemperaturerange TJ, TSTG -55to150 ºC Parameter Symbol Typ Max Units Maximumjunction-ambient a t< 5sec RthJA - 100 ºC/Wsteadystate 166 - Notes a. SurfacemountedonFR4board, b. t<5 sec. 1of4 Rev1.1JAN2014 Pin Function
1 Gate
2 Source
3 Drain
2.5A， 30V N-CHANNELMOSFETKIA SEMICONDUCTORS 2304KIA SEMICONDUCTORS KIA SEMICONDUCTORS 4. Electricalcharacteristics (TA=25°C,unlessotherwisenoted) Parameter Symbol TestConditions Min Typ Max Units Static Drain-sourcebreakdownvoltage V(BR)DSS VDS=0V,ID=250μA 30 - - V Gatethresholdvoltage VGS(th) VDS=VGS,I D=250μA 1 - - V Gate-bodyleakage IGSS VGS=+12V,V DS=0V - - +100 nA Zerogatevoltagedraincurrent IDSS VDS=25V,V GS=0V - - 1 μA On-statedraincurrent a ID(on) VDS>4.5V,V GS=10V 6 - - A VDS>4.5V,V GS=4.5V 4 - - Staticdrain-sourceon-resistance a RDS(on) VGS=10V,ID=2.5A - - 0.055 Ω VGS=4.5V,ID=2.0A - - 0.080 Forwardtransconductance a gfs VDS=4.5V,I D=2.5A - 4.8 - S Diodeforwardvoltage VSD VGS=0V,IS=1.25A - 0.77 1.2 V Dynamicb Totalgatecharge Qg VDS=15V, VGS=5V,ID=2.5A - 2.4 4 nCTotalgatecharge Qgt VDS=15V,V GS=10V ID=2.5A 4.5 10 Gate-sourcecharge Qgs - 0.8 Gate-draincharge Qgd - 1.0 - Inputcapacitance Ciss VDS=15V,VGS=0V, f=1MHz - 240 - pFOutputcapacitance Coss - 110 - Reversetransfercapacitance Crss - 17 - Switching Turn-ondelaytime td(on) VDD=15V,I D =1A, RL=15Ω,R G=6Ω, VGEN=10V - 8 20 ns Risetime tr - 12 30 Turn-offdelaytime td(off) - 17 35 Falltime tf - 8 20 Notes a. Guaranteed by design, not subject to production testing. b. Pulsetest;pulsewidth< 300μs,dutycycle< 2%. 2of4 Rev1.1JAN2014
2.5A， 30V N-CHANNELMOSFETKIA SEMICONDUCTORS 2304KIA SEMICONDUCTORS KIA SEMICONDUCTORS 5.Testcircuitsandwaveforms 3of4 Rev1.1JAN2014
2.5A， 30V N-CHANNELMOSFETKIA SEMICONDUCTORS 2304KIA SEMICONDUCTORS KIA SEMICONDUCTORS 4of4 Rev1.1JAN2014