2302 KIA

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3.0A， 20V N-CHANNELMOSFETKIA SEMICONDUCTORS 2302KIA SEMICONDUCTORS KIA SEMICONDUCTORS 1.Features n VDS=20V,RDS(on)=0.065Ω@VGS=4.5V,ID=3.0A n VDS=20V,RDS(on)=0.090Ω@VGS=2.5V,ID=2.0A 2.Symbol 3. Absolutemaximumratings Parameter Symbol Rating Units Drain-sourcevoltage VDS 20 V Gate-sourcevoltage VGS +8 V Draincurrentcontinuous(T J=150 ºC) b TA=25°C ID 3.0 A TA=70°C 2.0 Pulseddraincurrent a IDM 10 Continuoussourcecurrent(diodeconduction) b IS 1.6 Powerdissipation b TA=25°C PD 1.25 W TA=70°C 0.8 Junctionandstoragetemperaturerange TJ, TSTG -55to150 ºC Parameter Symbol Rating Units Maximumjunction-ambient b RthJA 100 ºC/WMaximumjunction-ambient c 166 Notes a. Pulse width limited by maximum junction temperature. b. Surface mounted on FR4 board, t<5 sec. c. SurfacemountedonFR4board. 1of4 Rev1.1JAN2014 Pin Function

1 Gate

2 Source

3 Drain

3.0A， 20V N-CHANNELMOSFETKIA SEMICONDUCTORS 2302KIA SEMICONDUCTORS KIA SEMICONDUCTORS 4. Electricalcharacteristics (TA=25°C,unlessotherwisenoted) Parameter Symbol TestConditions Min Typ Max Units Drain-sourcebreakdownvoltage V(BR)DSS VGS=0V,ID=250μA 20 - - V Gatethresholdvoltage VGS(th) VDS=VGS,I D=250μA 0.5 - 1.0 V Gate-bodyleakage IGSS VGS=+8V,V DS=0V - - +100 nA Zerogatevoltagedraincurrent IDSS VDS=16V,V GS=0V - - 50 nA On-statedraincurrent a ID(on) VDS>5V,V GS=4.5V 6 - - A VDS>5V,V GS=2.5V 4 - - Staticdrain-sourceon-resistance a RDS(on) Ω Forwardtransconductance a gfs VDS=5V,I D=-3.0A - 10 - S Diodeforwardvoltage VSD VGS=0V,IS=1.0A - - 1.28 V Totalgatecharge Qg VDS=10V,V GS=4.5V ID=3.6A - 5.4 10 nCGate-sourcecharge Qgs - 0.65 - Gate-draincharge Qgd - 1.6 - Inputcapacitance Ciss VDS=10V,VGS=0V, f=1MHz - 340 - pFOutputcapacitance Coss - 115 - Reversetransfercapacitance Crss - 33 - Turn-ondelaytime td(on) VDD=10V,I D =3.6A, RL=5.5Ω,R G=6Ω, VGEN=4.5V - 12 25 ns Risetime tr - 36 60 Turn-offdelaytime td(off) - 34 60 Falltime tf - 10 25 Notes a. Pulse test:pulse width<300μs,duty cycle<2% 2of4 Rev1.1JAN2014

3.0A， 20V N-CHANNELMOSFETKIA SEMICONDUCTORS 2302KIA SEMICONDUCTORS KIA SEMICONDUCTORS 5.Testcircuitsandwaveforms 3of4 Rev1.1JAN2014

3.0A， 20V N-CHANNELMOSFETKIA SEMICONDUCTORS 2302KIA SEMICONDUCTORS KIA SEMICONDUCTORS 4of4 Rev1.1JAN2014