2301 KIA
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Technical content
-2.8A，-20V P-CHANNELMOSFETKIA SEMICONDUCTORS 2301KIA SEMICONDUCTORS KIA SEMICONDUCTORS 1.Features n VDS=-20V,RDS(on)=0.12Ω@VGS=-4.5V,ID=-2.8A n VDS=-20V,RDS(on)=0.19Ω@VGS=-2.5V,ID=-1.8A 2.Symbol 3. Absolutemaximumratings Parameter Symbol Rating Units Drain-sourcevoltage VDS -20 V Gate-sourcevoltage VGS +8 V Draincurrentcontinuous(T J=150 ºC) b TA=25°C ID -2.8 A TA=70°C -1.5 Pulseddraincurrent a IDM -10 Continuoussourcecurrent(diodeconduction) b IS -1.6 Powerdissipation b TA=25°C PD 1.25 W TA=70°C 0.8 Junctionandstoragetemperaturerange TJ, TSTG -55to150 ºC Parameter Symbol Rating Units Maximumjunction-ambient b RthJA 100 ºC/WMaximumjunction-ambient c 166 Notes a. Pulsewidthlimitedbymaximumjunctiontemperature. b. Surface mounted on FR4 board, t<5 sec. c. SurfacemountedonFR4board. 1of4 Rev1.1JAN2014 Pin Function
1 Gate
2 Source
3 Drain
-2.8A，-20V P-CHANNELMOSFETKIA SEMICONDUCTORS 2301KIA SEMICONDUCTORS KIA SEMICONDUCTORS 4. Electricalcharacteristics (TJ=25°C,unlessotherwisenoted) Parameter Symbol TestConditions Min Typ Max Units Drain-sourcebreakdownvoltage V(BR)DSS VGS=0V,ID=-250μA -20 - - V Gatethresholdvoltage* VGS(th) VDS=VGS,I D=-250μA -0.5 - -1.0 V Gate-bodyleakage IGSS VGS=+8V,V DS=0V - - +100 nA Zerogatevoltagedraincurrent IDSS VDS=-16V,V GS=0V - - -50 nA On-statedraincurrent a ID(on) VDS<-5V,V GS=-4.5V -6 - - A VDS<-5V,V GS=-2.5V -3 - - Staticdrain-sourceon-resistance a RDS(on) Ω Forwardtransconductance a gfs VDS=-5V,I D=-2.3A - 6.5 - S Diodeforwardvoltage VSD VGS=0V,IS=-1.6A - -0.8 -1.2 V Totalgatecharge Qg VDS=-6.0V,V GS=-4.5V ID=-2.3A - 5.8 10 nCGate-sourcecharge Qgs - 0.85 - Gate-draincharge Qgd - 1.7 - Inputcapacitance Ciss VDS=-6V,VGS=0V, f=1MHz - 415 - pFOutputcapacitance Coss - 223 - Reversetransfercapacitance Crss - 87 - Turn-ondelaytime td(on) VDD=-6V,I D =-1.0A, RL=6Ω,R G=6Ω, VGEN=-4.5V - 13 25 ns Risetime tr - 36 60 Turn-offdelaytime td(off) - 42 70 Falltime tf - 34 60 Notes a. Pulse test:pulse width<300μs,duty cycle<2% 2of4 Rev1.1JAN2014
-2.8A，-20V P-CHANNELMOSFETKIA SEMICONDUCTORS 2301KIA SEMICONDUCTORS KIA SEMICONDUCTORS 5.Testcircuitsandwaveforms 3of4 Rev1.1JAN2014
-2.8A，-20V P-CHANNELMOSFETKIA SEMICONDUCTORS 2301KIA SEMICONDUCTORS KIA SEMICONDUCTORS 4of4 Rev1.1JAN2014