2300 KIA
Document overview
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Technical content
6.0A，20V N-CHANNELMOSFETKIA SEMICONDUCTORS 2300KIA SEMICONDUCTORS KIA SEMICONDUCTORS 1.Features n VDS=20V,RDS(on)=30mΩ@VGS=10V,ID=6.0A n VDS=20V,RDS(on)=40mΩ@VGS=4.5V,ID=3.0A n VDS=20V,RDS(on)=55mΩ@VGS=2.5V,ID=2.0A 2.Symbol 3. Absolutemaximumratings (TA=25°C,unlessotherwisenoted) Parameter Symbol Rating Units Drain-sourcevoltage VDS 20 V Gate-sourcevoltage VGS +10 V Draincurrentcontinuous*T J=125 ºC ID 6.0 A Draincurrentpulsed IDM 20 Powerdissipation* PD 1.25 W Thermalresistance,junction-ambient RthJA 100 ºC/W Junctionandstoragetemperaturerange TJ, TSTG -55to150 ºC *SurfacemountedonFR4board,t< 10sec. 1of5 Rev1.1JAN2014 Pin Function
1 Gate
2 Source
3 Drain
G S D
6.0A，20V N-CHANNELMOSFETKIA SEMICONDUCTORS 2300KIA SEMICONDUCTORS KIA SEMICONDUCTORS 4. Electricalcharacteristics (TA=25°C,unlessotherwisenoted) Parameter Symbol TestConditions Min Typ Max Units Drain-sourcebreakdownvoltage BVDSS VGS=0V,ID=250μA 20 - - V Zerogatevoltagedraincurrent IDSS VDS=16V,V GS=0V - - 1 μA Gate-bodyleakage IGSS VGS=+10V,V DS=0V - - +100 nA Gatethresholdvoltage* VGS(th) VDS=VGS,I D=250μA 0.5 0.78 1.0 V Onstatedraincurrent ID(on) VDS=5V,V GS=4.5V 5 - - A Staticdrain-sourceon-resistance* RDS(on) VGS=10V,ID=6.0A - 28 30 mΩVGS=2.5V,ID=3.0A - 38 40 VGS=1.8V,ID=2.0A - 52 55 Forwardtransconductance* gfs VDS=15V,I D=5A 30 - - S Inputcapacitance Ciss VDS=15V,VGS=0V, f=1MHz - 888 - pFOutputcapacitance Coss - 144 - Reversetransfercapacitance Crss - 115 - Turn-ondelaytime td(on) VDD=10V,I D =1.0A, RL=10Ω,R G=6Ω, VGS=4.5V - 31.8 - ns Risetime tr - 14.5 - Turn-offdelaytime td(off) - 50.3 - Falltime tf - 31.9 - Totalgatecharge Qg VDS=10V,V GS=4.5V ID =3.5A - 16.8 - nCGate-sourcecharge Qgs - 2.5 - Gate-draincharge Qgd - 5.4 - Diodeforwardvoltage VSD VGS=0V,IS=1.25A - 0.825 1.3 V Drain-sourcediodeforwardcurrent* IS - - 1.25 A *Pulsedtest:pulsewidth< 300μs,dutycycle< 2% 2of5 Rev1.1JAN2014
6.0A，20V N-CHANNELMOSFETKIA SEMICONDUCTORS 2300KIA SEMICONDUCTORS KIA SEMICONDUCTORS 5.Testcircuitsandwaveforms 3of5 Rev1.1JAN2014
6.0A，20V N-CHANNELMOSFETKIA SEMICONDUCTORS 2300KIA SEMICONDUCTORS KIA SEMICONDUCTORS 4of5 Rev1.1JAN2014
6.0A，20V N-CHANNELMOSFETKIA SEMICONDUCTORS 2300KIA SEMICONDUCTORS KIA SEMICONDUCTORS 5of5 Rev1.1JAN2014