22RIA VISHAY

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Document Number: 93700 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 19-Sep-08 1 Medium Power Thyristors (Stud Version), 22 A 22RIA Series Vishay High Power Products

FEATURES

  • Improved glass passivation for high reliability and exceptional stability at high temperature  High dI/dt and dV/dt capabilities  Standard package  Low thermal resistance  Metric threads version available  Types up to 1200 V V DRM/VRRM  RoHS compliant  Designed and qualified for industrial and consumer level TYPICAL APPLICATIONS  Medium power switching  Phase control applications  Can be supplied to meet stringent military, aerospace and other high reliability requirements PRODUCT SUMMARY IT(AV) 22 A TO-208AA (TO-48) RoHS COMPLIANT MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS IT(AV) 22 A TC 85 °C IT(RMS) 35 A ITSM

50 Hz 400

A

60 Hz 420

50 Hz 793

60 Hz 724

tq Typical 110 µs TJ - 65 to 125 °C

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2 Revision: 19-Sep-08

Vishay High Power Products Medium Power Thyristors (Stud Version), 22 A ELECTRICAL SPECIFICATIONS Notes (1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/µs (2) For voltage pulses with tp ≤ 5 ms VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE (1) V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE (2) V IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA 22RIA 10 100 150 20 20 200 300 40 400 500 60 600 700 80 800 900 100 1000 1100 120 1200 1300 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average on-state current at case temperature IT(AV) 180° sinusoidal conduction 22 A 85 °C Maximum RMS on-state current I T(RMS) 35 A Maximum peak, one-cycle non-repetitive surge current ITSM t = 10 ms No voltage reapplied Sinusoidal half wave, initial T J = TJ maximum 400 A t = 8.3 ms 420 t = 10 ms 100 % VRRM reapplied 335 t = 8.3 ms 355 Maximum I2t for fusing I 2t t = 10 ms No voltage reapplied 793 A2s t = 8.3 ms 724 t = 10 ms 100 % VRRM reapplied 560 t = 8.3 ms 515 Maximum I2√t for fusing I 2√t t = 0.1 to 10 ms, no voltage reapplied, TJ = TJ maximum 7930 A 2√s Low level value of threshold voltage V T(TO)1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.83 V High level value of threshold voltage V T(TO)2 (I > π x IT(AV)), TJ = TJ maximum 0.95 Low level value of on-state slope resistance rt1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 14.9 mΩ High level value of on-state slope resistance rt2 (I > π x IT(AV)), TJ = TJ maximum 13.4 Maximum on-state voltage V TM Ipk = 70 A, TJ = 25 °C 1.70 V Maximum holding current I H TJ = 25 °C, anode supply 6 V, resistive load 130 mA Latching current I L 200

Document Number: 93700 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 19-Sep-08 3 22RIA Series Medium Power Thyristors (Stud Version), 22 A Vishay High Power Products Note t q = 10 µs up to 600 V, tq = 30 µs up to 1600 V available on special request Note (1) Available with: dV/dt = 1000 V/µs, to complete code add S90 i.e. 22RIA120S90 SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum rate of rise of turned-on current VDRM ≤ 600 V dI/dt TJ = TJ maximum, VDM = Rated VDRM Gate pulse = 20 V, 15 Ω, tp = 6 µs, tr = 0.1 µs maximum ITM = (2 x rated dI/dt) A 200 A/µs VDRM ≤ 800 V 180 VDRM ≤ 1000 V 160 VDRM ≤ 1600 V 150 Typical turn-on time t gt TJ = 25 °C, at rated VDRM/VRRM, TJ = 125 °C 0.9 µsTypical reverse recovery time t rr TJ = TJ maximum, ITM = IT(AV), tp > 200 µs, dI/dt = - 10 A/µs 4 Typical turn-off time t q TJ = TJ maximum, ITM = IT(AV), tp > 200 µs, VR = 100 V, dI/dt = - 10 A/µs, dV/dt = 20 V/µs linear to 67 % VDRM, gate bias 0 V to 100 W 110 BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum linear to 100 % rated VDRM 100 V/µs TJ = TJ maximum linear to 67 % rated VDRM 300 (1) TRIGGERING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum peak gate power P GM TJ = TJ maximum 8.0 W Maximum average gate power P G(AV) 2.0 Maximum peak positive gate current I GM TJ = TJ maximum 1.5 A Maximum peak negative gate voltage -V GM TJ = TJ maximum 10 V DC gate current required to trigger I GT TJ = - 65 °C Maximum required gate trigger current/voltage are the lowest value which will trigger all units

6 V anode to cathode applied

mATJ = 25 °C 60 TJ = 125 °C 35 DC gate voltage required to trigger V GT TJ = - 65 °C 3.0 VTJ = 25 °C 2.0 TJ = 125 °C 1.0 DC gate current not to trigger I GD TJ = TJ maximum, VDRM = Rated value 2.0 mA DC gate voltage not to trigger V GD TJ = TJ maximum, VDRM = Rated value Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied 0.2 V

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4 Revision: 19-Sep-08

Vishay High Power Products Medium Power Thyristors (Stud Version), 22 A Note  The table above shows the increment of thermal resistance R thJC when devices operate at different conduction angles than DC Fig. 1 - Current Ratings Characteristics F ig. 2 - Current Ratings Characteristics THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum operating junction and storage temperature range TJ, TStg - 65 to 125 °C Maximum thermal resistance, junction to case RthJC DC operation 0.86 K/W Maximum thermal resistance, case to heatsink RthCS Mounting surface, smooth, flat and greased 0.35 TO NUT TO DEVICE Mounting torque Lubricated threads (Non-lubricated threads) 20 (27.5) 25 lbf ⋅ in 0.23 (0.32) 0.29 kgf · m Approximate weight 14 g 0.49 oz. Case style See dimensions - link at the end of datasheet TO-208AA (TO-48) ΔRthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECT ANGULAR CONDUCTION TEST CONDITIONS UNITS 180° 0.21 0.15 TJ = TJ maximum K/W 120° 0.25 0.25 90° 0.31 0.34 60° 0.45 0.47 30° 0.76 0.76 100 110 120 130 0 5 10 15 20 25 30° 60° 90° 120° 180° Average On-state Current (A) Maximum Allowable Case Temperature (°C) Conduction Angle 22RIA Series R (DC) = 0.86 K/W thJC 100 110 120 130 0 1 02 03 04 0 DC 30° 60° 90° 120° 180° Average On-state Current (A) Maximum Allowable Case Temperature (°C) Conduction Period 22RIA Series R (DC) = 0.86 K/W thJC

Document Number: 93700 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 19-Sep-08 5 22RIA Series Medium Power Thyristors (Stud Version), 22 A Vishay High Power Products Fig. 3 - On-State Power Loss Characteristics Fig. 4 - On-State Power Loss Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current 02 5 5 0 7 5 1 0 0 1 2 5 Maximum Allowable Ambient Temperature (°C) R =1K/W -DeltaR thSA 2K/W 3K/W 4K/W 5K/W 7K/W 10K/W 0 5 10 15 20 25 RMS Limit Conduction Angle 180° 120° 90° 60° 30° Maximum Average On-state Power Loss (W) Average On-state Current (A) 22RIA Series T = 125°C J 02 5 5 0 7 5 1 0 0 1 2 5 Maximum Allowable Ambient Temperature (°C)

10 K/W

R =1K/W -DeltaR thSA 0 5 10 15 20 25 30 35 DC 180° 120° 90° 60° 30° RMS Limit Conduction Period Maximum Average On-state Power Loss (W) Average On-state Current (A) 22RIA Series T = 125°C J 150 175 200 225 250 275 300 325 350 375 11 0 1 0 0 Number Of Equal Amplitude Half Cycle Current Pulses (N) Peak Half Sine Wave On-state Current (A) 22RIA Series Initial T = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s J At Any Rated Load Condition And With Rated V Applied Following Surge. RRM 150 175 200 225 250 275 300 325 350 375 400 0.01 0.1 1 Peak Half Sine Wave On-state Current (A) Pulse Train Duration (s) Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T = 125°C No Voltage Reapplied Rated V Reapplied RRM J 22RIA Series

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6 Revision: 19-Sep-08

Vishay High Power Products Medium Power Thyristors (Stud Version), 22 A Fig. 7 - Forward Voltage Drop Characteristics Fig. 8 - Thermal Impedance ZthJC Characteristics Fig. 9 - Gate Characteristics 100 1000 0 . 511 . 522 . 53 T = 25°C J Instantaneous On-state Current (A) Instantaneous On-state Voltage (V) T = 125°C J 22RIA Series 0.01 0.1 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) 22RIA Series thJCTransient Thermal Impedance Z (K/W) Steady State Value R = 0.86 K/W (DC Operation) thJC 0.1 100 0.001 0.01 0.1 1 10 100 VGD IGD (b) (a) (1) (2) Instantaneous Gate Current (A) Instantaneous Gate Voltage (V) a) Recommended load line for b) Recommended load line for Rectangular gate pulse tr<=1 µs, tp >= 6 µs rated di/dt : 10V, 20ohms <=30% rated di/dt : 10V, 65ohms (1) PGM = 16W, tp = 4ms (2) PGM = 30W, tp = 2ms (3) PGM = 60W, tp = 1ms (4) PGM = 60W, tp = 1ms tr <=0.5 µs, tp >= 6 µs (3) (4) Tj = -65 °C Tj = 25 °C Tj = 125 °C 22RIA Series Frequency Limited by PG(AV)

Document Number: 93700 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 19-Sep-08 7 22RIA Series Medium Power Thyristors (Stud Version), 22 A Vishay High Power Products ORDERING INFORMATION TABLE - Current code - Voltage code x 10 = V RRM (see Voltage Ratings table) - None = Stud base TO-208AA (TO-48) 1/4 " 28UNF-2A M = Stud base TO-208AA (TO-48) M6 x 1 - Critical dV/dt: None = 300 V/µs (standard value) S90 = 1000 V/µs (special selection) - Essential part number Device code 513 24

22 RIA 120 M S90

LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95333

Document Number: 91000 www.vishay.com Revision: 18-Jul-08 1 Disclaimer Legal Disclaimer Notice Vishay All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all li ability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permit ted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.