20T_17 NELLSEMI
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www.nellsemi.com Page 1 of 5 SEMICONDUCTOR 20T Series RoHS RoHS GA2 TRIACs, 20A 1 2 3 TO-220AB (lnsulated) (20TxxAI) TO-220AB (non-Insulated) SYMBOL IT(RMS)RMS on-state current (full sine wave) TO-263/TO-220AB/TO-3P ITSM Non repetitive surge peak on-state current (full cycle, T initial = 25°C)j A I t22I t Value for fusing 200 2A s dI/dt Critical rate of rise of on-state current I = 2xl , t ≤100nsG GT r IGMPeak gate current 4 PG(AV)Average gate power dissipation 1 PGM 10 W A/µs A A UNITVALUE 200 210 F =50 Hz F =60 Hz t = 20 ms t = 16.7 ms t = 10 msp F =100 Hz T =125ºCj T =125ºCj T =125ºCj T =20 µsp ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITIONS TO-220AB insulated/TO-3P insulated T = 90ºCc T = 70ºCc G 2TO-263 (D PAK) (20TxxH)
FEATURES
APPLICATIONS
Low thermal resistance with clip bonding Low thermal resistance insulation ceramic for insulated TO-220AB & TO-3P package Clip assembly 20T series are UL certified (File ref: E320098) Packages are RoHS compliant The snubberless concept offer suppression of RC network and it is suitable for applications such as phase control and static switching on inductive or resistive load. MAIN FEATURES SYMBOL VALUE UNIT IT(RMS) V /VDRM RRM IGT(Q1) 20 A V mA35 to 50 600 to 1000 Due to their clip assembly techinque, they provide a superior performance in surge current handling capabilities. By using an internal ceramic pad, the 20T series provides voltage insulated tab (rated at 2500VRMS) complying with UL standards. TstgStorage temperature range Operating junction temperature range - 40 to + 150 - 40 to + 125 ºC Tj 1 2 G TO-3P (Insulated) (20TxxBI) (20TxxA) A1 A2 G (20TxxB) Peak gate power dissipation (tp = 20µs) T =125ºCj Snubberless TO-3P (non-Insulated) 2(A2) 3(G) 1(A1)
www.nellsemi.com Page 2 of 5 V (2)TM MAX. Vt0(2) Threshold voltage MAX. Dynamic resistance MAX. IDRM IRRM MAX. mA Note 1: Minimum l is guaranted at 5% of l max.GT GT Note 2: For both polarities of A2 referenced to A1. I = 28 A, TM t = 380 µsP T = 125°Cj T = 25°Cj T = 125°Cj T = 125°Cj T = 25°Cj 1.55 1.04 2.5 V V µA mΩ STATIC CHARACTERISTICS UNITVALUETEST CONDITIONS SYMBOL 20Txxxx Unit I (1)GT I - II - III VGT I - II - III VGD I - II - III (2)IH MAX. I - III MAX. mA II (2)dV/dt MIN. (dI/dt)c (2) MIN. A/ms IL MAX. MIN. V = 12 V, R = 33ΩD L V = V , R = 3.3KΩD DRM L T = 125°Cj I = 500 mAT I = 1.2 IG GT V = 67% V gate open ,T = 125°CD DRM j, (dV/dt)c = 20 A/ms, T = 125°Cj MAX. 1.5 0.2 500 mA V V mA V/µs TEST CONDITIONS QUADRANTSYMBOL BW 250 CW SNUBBERLESS (3 quadrants) (2)Rd SEMICONDUCTOR RoHS RoHS (T ºC unless otherwise specified)J= 25 ELECTRICAL CHARACTERISTICS V = VD DRM V = VR RRM 20T Series 1811 THERMAL RESISTANCE Rth(j-c) Junction to case (AC) Rth(j-a) Junction to ambient 2.1 °C/W UNITVALUESYMBOL TO-220AB, TO-263, TO-3P TO-220AB Insulated, TO-3P Insulated TO-220AB Insulated, TO-220AB 1.3 2S = 1 cm TO-263 PRODUCT SELECTOR PART NUMBER VOLTAGE (xx) SENSITIVITY PACKAGE 600 V 35 mA 50 mA 35 mA 50 mA 1000 V 20TxxA-CW/ 20TxxAl-CW 20TxxA-BW/20TxxAl-BW 20TxxB-CW/20TxxBl-CW 20TxxB-BW/20TxxBl-BW TYPE TO-220AB TO-220AB TO-3P Snubberless Snubberless V V V V V VV VV VV V 800 V V V V V V V 35 mA 50 mA Snubberless20TxxH -CW 20TxxH -BW Snubberless 2D PAK 2D PAK TO-3P, TO-3P Insulated S = Copper surface under tab. AI: Insulated TO-220AB package TO-3P Snubberless Snubberless BI: Insulated TO-3P package
www.nellsemi.com Page 3 of 5 SEMICONDUCTOR RoHS RoHS 20T Series ORDERING INFORMATION SCHEME Triac series Current Voltage 20 = 20A 06 = 600V 08 = 800V BW = 50mA Snubberless
20 T 06 A - BW
10 = 1000V A = TO-220AB (non-insulated) AI = TO-220AB ( insulated) I Sensitivity GT 2H = TO-263 (D PAK) B = TO-3P (non-insulated) BI = TO-3P ( )insulated CW = 35mA Snubberless Fig.1 Maximum power dissipation versus RMS on-state current (full cycle) 0 10 15 2200 P (W) I (A)T(RMS) α α 180° α =180° α =120° α =90° α =60° α =30° 2200 Fig.2 Correlation between maximun RMS dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact power 0 40 60 10080 120 125 105 115 T (°C)amb R =1°C/Wth R =1.5°C/Wth R =0°C/Wth R =0.5°C/Wth P (W) T (°C)case
ORDERING INFORMATION
ORDERING TYPE MARKING PACKAGE WEIGHT ,BASE Q TY DELIVERY MODE TO-220AB 2.0g 50 Tube 20TxxAI-yy 20TxxAI-yy 2.3g 50 Tube 20TxxB-yy 20TxxB-yy TO-3P 4.3g 30 20TxxBI-yy 20TxxBI-yy 4.8g 30 Tube Note: xx = voltage, yy = sensitivity TO-3P (insulated) TO-220AB (insulated) Tube 20TxxH-yy 20TxxH-yy 2.0g 50 Tube2TO-263(D PAK)
www.nellsemi.com Page 4 of 5 Fig.3 RMS on-state current versus case temperature (full cycle) 0 30 50 Fig.4 Relative variation of thermal impedance versus pulse duration. 1E-3 0.01 0.1 K=[Z /R ]th th 5E+21E+21E+11E+01E-11E-2 20T Series 100 110 12080 9060402010 130 TO-220AB TO-263 TO-3P TO-220AB ( ) (insulated) TO-3P insulated T (°C)c I (A)T(RMS) α =180° Zth(j-c) Zth(j-a) tp(s) 100 I (A) Fig.5 On-state characteristics (maximum values). 1 2 3 4 5 100 I (A)TSM Fig.6 Surge peak on-state current versus number of cycles. 1 10 100 1000 10001000 T max.j V = 1.04Vto R = 20Ωmd T =T maxj j T =25°Cj V (V)TM Non repetitive T initial=25°Cj t=20ms One cycle Number of cycles 1000 Fig.7 Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms.2 and corresponding value of l t. Fig.8 Relative variation of gate trigger current and holding current versus junction temperature. 2 2l (A), l t(A s)TSM l ,l ,l [T ] / l ,l ,l [T =25°C]GT H L j GT H L j 100 T initial=25°Cj ITSM 2I t t (ms)p 0.01 0.10 1.00 10.00 T (°C)j IGT I & IH L -30 50 70 100 110 12080 90600-20 -10 130-40 302010 40 0.0 0.5 1.5 1.0 2.0 2.5
www.nellsemi.com Page 5 of 5 SEMICONDUCTOR RoHS RoHS Case Style 20T Series 2.87 (0.113) 2.62 (0.103) 9.40 (0.370) 9.14 (0.360) 10.54 (0.415) MAX. 16.13 (0.635) 15.87 (0.625) PIN 4.06 (0.160) 3.56 (0.140) 1.45 (0.057) 1.14 (0.045) 2.67 (0.105) 2.41 (0.095) 2.65 (0.104) 2.45 (0.096) 5.20 (0.205) 4.95 (0.195) 0.90 (0.035) 0.70 (0.028) 3.91 (0.154) 3.74 (0.148) 4.70 (0.185) 4.44 0.1754 ( ) 1.39 (0.055) 1.14 (0.045) 3.68 (0.145) 3.43 (0.135) 8.89 (0.350) 8.38 (0.330) 29.16 (1.148) 28.40 (1.118) 14.22 (0.560) 13.46 (0.530) 0.56 (0.022) 0.36 (0.014) 2.79 (0.110) 2.54 (0.100) 15.32 (0.603) 14.55 (0.573) TO-220AB 2TO-263(D PAK) 2.79 (0.110) 0.36 (0.014) 2.79 (0.110) 2.29 (0.090) 1.40 (0.055) 1.19 (0.047) 0 to 0.254 (0 to 0.01) 1.40 (0.055) 1.14 (0.045) 4.83 (0.190) 4.06 (0.160) 10.45 (0.411) 9.65 (0.380) 6.22 (0.245) 9.14 (0.360) 8.13 (0.320) 15.00 (0.591) 0.940 (0.037) 0.686 (0.027) 2.67 (0.105) 2.41 (0.095) 5.20 (0.205) 4.95 (0.195) 15.85 (0.624) 3.56 (0.140) 0.53 (0.021) TO-3P 2.90 (0.114) 2.70 (0.106) 0.70 (0.028) 0.50 (0.020) 1.55 (0.061) 1.45 (0.057) 4.60 (0.181) 4.40 (0.173) 5.65 (0.222) 5.40 (0.213) 5.65 (0.222) 5.40 (0.213) 15.60 (0.614) 14.35 (0.565) 16.50 (0.650) 15.80 (0.622) 21.10 (0.831) 20.40 (0.803) Φ4.17 (0.164) 4.08 (0.160) 15.50 (0.610) 15.10 (0.594) R 4.60 (0.181) 3.65 (0.144) 3.40 (0.134) 1.40 (0.055) 1.20 (0.047) 1 2 3 2(A2) 3(G) 1(A1)