20PT

20PT NELLSEMI

Document overview

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Technical content

SEMICONDUCTOR 20PT Series RoHS RoHS Stansard SCRs, 20A Main Features Symbol Value Unit IT(RMS) V /VDRM RRM IGT 20 A V mA3 to 25 600 to 1000

DESCRIPTION

A K A G TO-220AB (Non-lnsulated) K AG TO-220AB (lnsulated) (20PTxxA) (20PTxxAI) www.nellsemi.com The 20PT series of silicon controlled rectifiers are high performance glass passivated technology, and are suitable for general purpose applications. Using clip assembly technology, they provide a superior performance in surge current capabilities. 2TO-263 (D PAK) (20PTxxH) SYMBOL IT(RMS) RMS on-state current full sine wave ITSM Non repetitive surge peak on-state current (full cycle, T initial = 25°C)j A I t22I t Value for fusing 200 2A s dI/dtCritical rate of rise of on-state current 50 IGMPeak gate current PG(AV)Average gate power dissipation TstgStorage temperature range Operating junction temperature range - 40 to + 150 - 40 to + 125 ºC A/µs A A W UNITVALUE 200F =50 Hz F =60 Hz t = 20 ms t = 16.7 ms t = 10 msp F = 60 Hz T =125ºCj T = 125ºCj T = 125ºCj T = 20 µsp Tj ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITIONS V600 to 1000 T =125ºCj VDRM VRRM Repetitive peak off-state voltage Repetitive peak reverse voltage (180° conduction angle ) Average on-state current (180° conduction angle) IT(AV) 13 A I = 2xl , t ≤100nsG GT r TO-263/TO-220AB TO-220AB insulated T =100°CC T =80°CC Maximum gate power PGM W10T =20µsp T = 125ºCj TO-263/TO-220AB TO-220AB insulated T =100°CC T =80°CC 220 3(G) 1(K) 2(A) K A G A

Page 2 of 5www.nellsemi.com Note: xx = voltage 20PTxxxx Unit IGT VGD IH mA dV/dt VTM IDRM IRRM mA IL V = 12V, R = 33ΩD L V = V , R = 3.3KD DRM L Ω R = 220ΩGK I = 500mA, Gate openT I = 1.2×IG GT V = 67% V Gate openD DRM, 0.2 500 mA V V mA V/µs I = 40A, T t = 380µsP T = 125°Cj T = 25°Cj T = 25°Cj V µA ELECTRICAL SPECIFICATIONS (T = 25 ºC unless otherwise specified)J TEST CONDITIONS SYMBOL V =V , V =VD DRM R RRM 1.6 2R = 220ΩGK Max. Max. Min. Max. Min. Min. Max. Max. Max. THERMAL RESISTANCE Rth(j-c) Junction to case (DC) Rth(j-a) Junction to ambient 1.05 °C/W °C/W UNITVALUESYMBOL Parameter 2D PAK/TO-220AB TO-220AB insulated TO-263( PAK)2D TO-220AB/TO-220AB insulated 2.1 VGT V0.77Vto T = 125°Cj PRODUCT SELECTOR PART NUMBER VOLTAGE (xx) SENSITIVITY 600 V 25 mA 1000 V 20PTxxA/20PTxxAl 20PTxxH VV 800 V V PACKAGE TO-220AB VV V 2D PAK 25 mA

ORDERING INFORMATION

ORDERING TYPE MARKING PACKAGE WEIGHT ,BASE Q TY DELIVERY MODE TO-220AB 2.0g 50 Tube 20PTxxAI/20PTxxAI-D 2.3g 50 Tube 20PTxxH/20PTxxH-D 2TO-263(D PAK) 2.0g 50 TO-220AB (insulated) Tube Rd mΩT = 125°Cj T = 125°Cj T = 125°Cj Max. Max. 23 2S = 1 cm Threshold Voltage Dynamic Resistance Min. 1.3 S=Copper surface under tab 0.2 100 1.3 20PTxxA-D / 20PTXXAI-D xV V 20PTxxH-D xV V 2D PAK 4-10 mA 4-10 mA TO-220AB 20PTxxA/20PTxxA-D 20PTxxAI/20PTxxAI-D 20PTxxH/20PTxxH-D

Page 3 of 5www.nellsemi.com ORDERING INFORMATION SCHEME SCR series Package type Current Voltage Code A = TO-220AB (non-insulated) AI = TO-220AB ( insulated) 20 = 20A, IT(RMS)

20 PT 06

06 = 600V 2H = TO-263 (D PAK) 08 = 800V 10 = 1000V Fig.1 Maximum average power dissipation versus average on-state current. Fig.2 Average and D.C. on-state current versus case temperature. D.C. Fig.3 Average and D.C. on-state current versus ambient temperature. 2 (copper surface under tab: S=1cm )2 (D PAK) Fig.4 Relative variation of thermal impedance versus pulse duration. D.C. Z (j-c)th Z (j-a)th P (W) 0 2 4 6 8 10 12 α=180° α 360° I (A)T(AV) 0 25 50 75 100 125 T (°C)case α=180° α=180° T (°C)amb 0.0 0.5 1.0 1.5 2.0 2.5 4.0 3.5 3.0 l (A)T(AV) l (A)T(AV) 0 25 50 75 100 125 K=[Z /R ]th th 1.00 0.10 0.01 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 t (s)P TO-263 TO-220AB TO-220AB insulated AI D I SensitivityGT D = 4~10 mA Blank = 3~25mA

Fig.6 Surge peak on-state current versus number of cycles. Fig.5 Relative variation of gate trigger current, holding current and latching current and latching current versus junction temperature. Number of cycles Repetitive T = 100 °Ccase Non repetitive T initial = 25°Cj T (°C)J lGT 2.5 2.0 1.5 1.0 0.5 0.0 l ,l ,l [T ] / l ,l ,l [T =25°C]GT H L j GT H L j 100 12080600-20 140-40 20 40 I & IH L I (A)TSM 100 120 140 160 180 200 1 10 t =20msp One cycle 100 1000 Fig.7 Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, and corresponding 2 values of l t Fig.8 On-state characteristics (maximum values) 100 1000 2000 T max.:j V = 0.77Vto R = 23mΩ d T maxj Tj = 25°C V (V)TMt (ms)p T initial = 25°Cj lTSM dl/dt limitattion 2l t 0.01 0.10 1.00 10.00 200 100 Fig.9 Thermal resistance junction to ambient versus copper surface under tab (epoxy printed circuit board Fr4,2 copper thickness:35 µm)(D PAK) 0 0 4 8 12 16 20 24 28 32 36 40 R (°C/W)th(j-a) 2S(cm ) Page 4 of 5www.nellsemi.com

2.87 (0.113) 2.62 (0.103) 9.40 (0.370) 9.14 (0.360) 10.54 (0.415) MAX. 16.13 (0.635) 15.87 (0.625) PIN 4.06 (0.160) 3.56 (0.140) 1.45 (0.057) 1.14 (0.045) 2.67 (0.105) 2.41 (0.095) 2.65 (0.104) 2.45 (0.096) 5.20 (0.205) 4.95 (0.195) 0.90 (0.035) 0.70 (0.028) 3.91 (0.154) 3.74 (0.148) K G A 4.70 (0.185) 4.44 0.1754 ( ) 1.39 (0.055) 1.14 (0.045) 3.68 (0.145) 3.43 (0.135) 8.89 (0.350) 8.38 (0.330) 29.16 (1.148) 28.40 (1.118) 14.22 (0.560) 13.46 (0.530) 0.56 (0.022) 0.36 (0.014) 2.79 (0.110) 2.54 (0.100) 15.32 (0.603) 14.55 (0.573) TO-220AB 20PT Series 2TO-263(D PAK) 2.79 (0.110) 0.36 (0.014) 2.79 (0.110) 2.29 (0.090) 1.40 (0.055) 1.19 (0.047) 0 to 0.254 (0 to 0.01) 1.40 (0.055) 1.14 (0.045) 4.83 (0.190) 4.06 (0.160) 10.45 (0.411) 9.65 (0.380) 6.22 (0.245) 9.14 (0.360) 8.13 (0.320) 15.00 (0.591) 0.940 (0.037) 0.686 (0.027) 2.67 (0.105) 2.41 (0.095) 5.20 (0.205) 4.95 (0.195) 15.85 (0.624) 3.56 (0.140) 0.53 (0.021) Case Style Page 5 of 5www.nellsemi.com 3(G) 1(K) 2(A) K G A A