20N60 ISC
Document overview
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- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc websit e：： ：： www.iscsemi.com isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor 20N60
- · ··FEATURES
- Drain Current I D= 20A@ T C=25 ℃
- Drain Source Voltage- : V DSS = 600V(Min)
- Low ON Resistance R DS(on) = 0.45 Ω(Max)
- Fast Switching
- · ··DESCRITION
- High efficiency switch mode power supply
- Motor control, UPS, DC
- Choppers and switch-mode
- · ··ABSOLUTE MAXIMUM RATINGS(T a=25 ℃℃ ℃℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 20 A IDM Drain Current-Single Plused 80 A PD Power Dissipation 250 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature range -55~150 ℃
- · ··THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.5 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 40 ℃/W
INCHANGE Semiconductor isc Product Specification isc websit e：： ：： www.iscsemi.com isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor 20N60
ELECTRICAL CHARACTERISTICS
TC=25 ℃℃ ℃℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS = 0; I D= 0.25mA 600 V VGS (th ) Gate Threshold Voltage VDS = V GS ; I D= 0.25mA 2 4 V RDS( on ) Drain-Source On-Resistance VGS = 10V; I D= 10A 0.45 Ω IGSS Gate-Body Leakage Current VGS = ±20V;V DS = 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS = 600V; V GS = 0 10 μA VSD Forward On-Voltage I S= 20A; V GS = 0 1.5 V
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