20N50H KIA

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20A，500V N-CHANNELMOSFETKIA SEMICONDUCTORS 20N50HKIA SEMICONDUCTORS KIA SEMICONDUCTORS 1.Description TheKIA20N50HN-ChannelenhancementmodesilicongatepowerMOSFETisdesignedforhigh voltage,highspeedpowerswitchingapplicationssuchashighefficiencyswitchedmodepowersupplies, activepowerfactorcorrection. 2.Features n RDS(on)=0.21Ω@ VGS=10V n Low gate charge ( typical 70nC) n Fast switching capability n Avalanche energy specified n Improved dv/dt capability 3. Pinconfiguration 1of5 Rev1.1JAN2014 Pin Function

1 Gate

2 Drain

3 Source

20A，500V N-CHANNELMOSFETKIA SEMICONDUCTORS 20N50HKIA SEMICONDUCTORS KIA SEMICONDUCTORS 4. Absolutemaximumratings (TC=25 ºC,unlessotherwisespecified) Parameter Symbol Ratings Units TO220F TO247 TO3P Drain-sourcevoltage VDSS 500 V Gate-sourcevoltage VGSS +30 V Draincurrentcontinuous TC=25ºC ID 20.0 A TC=100ºC 13* 13.0 13.0 A Draincurrentpulsed(note1) IDP 80* 80 80 A Avalancheenergy Repetitive(note1) EAR 3.8 28 28 mJ Singlepulse(note2) EAS 1110 mJ Peakdioderecoverydv/dt(note3) dv/dt 4.5 V/ns Totalpowerdissipation TC=25ºC PD 38.5 280 280 W derateabove25 ºC 0.3 2.3 2.3 W/ºC Junctiontemperature TJ +150 ºC Storagetemperature TSTG -55~+150 ºC *Draincurrentlimitedbymaximumjunctiontemperature. 5. Thermalcharacteristics Parameter Symbol Ratings UnitsTO220F TO247 TO3P Thermalresistance,junction-ambient RthJA 62.5 40 40 ºC/WThermalresistance,case-to-sinktyp. RthCS -- 0.24 0.24 Thermalresistance,Junction-case RthJC 3.3 0.44 0.44 2of5 Rev1.1JAN2014

20A，500V N-CHANNELMOSFETKIA SEMICONDUCTORS 20N50HKIA SEMICONDUCTORS KIA SEMICONDUCTORS 6. Electricalcharacteristics (TJ=25°C,unlessotherwisespecified) Parameter Symbol Conditions Min Typ Max Units Offcharacteristics Drain-sourcebreakdownvoltage BVDSS VGS=0V,ID=250μA 500 - - V Zerogatevoltagedraincurrent IDSS VDS=500V,V GS=0V - - 1 μA VDS=400V,T C=125 ºC - - 10 μA Gate-bodyleakagecurrent Forward IGSS VGS=30V,VDS=0V - - 100 nA Reverse VGS=-30V,VDS=0V - - -100 nA Breakdownvoltagetemperaturecoefficient △BVDSS/△TJ ID=250μA - 0.5 - V/°C Oncharacteristics Gatethresholdvoltage VGS(th) VDS=VGS,I D=250μA 2.0 - 4.0 V Staticdrain-sourceon-resistance RDS(on) VDS=10V,ID=10.0A - 0.21 0.26 Ω Dynamiccharacteristics Inputcapacitance Ciss VDS=25V,VGS=0V, f=1MHz - 2700 - pF Outputcapacitance Coss - 400 - pF Reversetransfercapacitance Crss - 40 - pF Switchingcharacteristics Turn-ondelaytime td(on) VDD=250V,ID=20.0A, RG=25Ω(note4,5) - 100 - ns Risetime tr - 400 - ns Turn-offdelaytime td(off) - 100 - ns Falltime tf - 100 - ns Totalgatecharge Qg VDS=400V,ID=20.0A, VGS=10V(note4,5) - 70 - nC Gate-sourcecharge Qgs - 18 - nC Gate-draincharge Qgd - 35 - nC Drain-sourcediodecharacteristics Drain-sourcediodeforwardvoltage VSD VGS=0V,ID=20.0A - - 1.5 V Continuousdrain-sourcecurrent ISD - - 20.0 A Pulseddrain-sourcecurrent ISM - - 80.0 A Reverserecoverytime trr ISD=20.0A dlSD/dt=100A/μs (note4) - 500 - ns Reverserecoverycharge Qrr - 7.2 - μC Note:1Repetitiverating:pulsewidthlimitedbymaximumjunctiontemperature 2.L=5.0mH,IAS=20.0A,VDD=50V,RG=25Ω,staringT J=25ºC 3.ISD<20.0A,di/dt<200A/μs,VDD<BVDSS,staringT J=25 ºC 4.Pulsetest:pulsewidth< 300μs,dutycycle< 2% 5.Essentiallyindependentofoperatingtemperature 3of5 Rev1.1JAN2014

20A，500V N-CHANNELMOSFETKIA SEMICONDUCTORS 20N50HKIA SEMICONDUCTORS KIA SEMICONDUCTORS 7.Testcircuitsandwaveforms 4of5 Rev1.1JAN2014

20A，500V N-CHANNELMOSFETKIA SEMICONDUCTORS 20N50HKIA SEMICONDUCTORS KIA SEMICONDUCTORS 5of5 Rev1.1JAN2014