20N50

20N50 NELLSEMI

Document overview

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Technical content

(20A, 500Volts) They are designed for use in applications such as switched mode power supplies, DC to DC converters, motor control circuits, UPS and general purpose switching applications. The Nell 20N50 is a three-terminal silicon device with current conduction capability of 20A, fast switching speed, low on-state resistance, breakdown voltage rating of 500V, and max. threshold voltage of 5 volts.

DESCRIPTION

Low reverse transfer capacitance (C = 27pF typical)RSS R = 0.23Ω@V = 10V DS(ON) GS Ultra low gate charge(60nC max.) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature

FEATURES

I (A)D 20 V (V)DSS 500 0.23 @ V = 10VGS R (Ω)DS(ON) Q (nC) max.G TO-3PB (20N50B) G D S D www.nellsemi.com Page 1 of 7 UNIT V /ns V W(W/°C) A mJ ºC -55 to 150 VALUE 12.4 500 ±30 500 280 (2.3) 4.6 ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise specified)C T =25°C to 150°CJ TEST CONDITIONS R =20KΩGS T =25°C C T =100°C C Operation junction temperature Repetitive avalanche energy(Note 1) Storage temperature Peak diode recovery dv/dt(Note 2) PARAMETER Pulsed Drain current(Note 1) Continuous Drain Current Total power dissipation (Derating factor above 25°C) Gate to Source voltage Drain to Gate voltage Drain to Source voltage SYMBOL VDGR VDSS dv/dt VGS IDM EAR TSTG PD ID TJ TL . .lbf in (N m) 300Maximum soldering temperature, for 10 seconds Mounting torque, #6-32 or M3 screw -55 to 150 Note: 1.Repetitive rating: pulse width limited by junction temperature. 10 (1.1) 1.6mm from case IAR Avalanche current(Note 1) 20 I =20A, R =50Ω, V =10VAR GS GS T =25°C C 2.I ≤ 20A, di/dt ≤ 200A/µs, V ≤ V , starting T =25°C.SD DD (BR)DSS J D (Drain) G (Gate) S (Source)

www.nellsemi.com Page 2 of 7 UNIT V ns μA pF nC 105 Max. 3.0 250 500 0.20 -100 100 0.5 2400 375 100 355 ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)C I = 250µA, V = 0VD GS TEST CONDITIONS I = 250µA, referenced to 25°CD V =500V, V =0V DS GS T = 25°C C Fall time Gate to source reverse leakage current Input capacitance Total gate charge Output capacitance PARAMETER Rise time Gate to source forward leakage current Turn-on delay time Reverse transfer capacitance Breakdown voltage temperature coefficient Drain to source breakdown voltage Turn-off delay time SYMBOL CISS ▲ ▲V /(BR)DSS TJ V(BR)DSS IGSS QG tr tf QGS 15Gate to source charge Single pulse avalanche energy(Note 3) V = 400V, V = 10V, I = 20A DD GS D (Note 1, 2) Drain to source leakage currentIDSS COSS CRSS td(ON) td(OFF) EAS V/ºC Ω V nA T =150°C C Typ.Min. 0.23 5.0 3120 465 200 760 210 220 1110 V = 250V, DD R (Note 1, 2) V = 10V, I = 20AGS D = 25ΩGS V = 25V, V = 0V, f =1MHzDS GS V = -30V, V = 0VGS DS V = 30V, V = 0VGS DS V =V , I =250μA GS DS DGate threshold voltage Static drain to source on-state resistanceRDS(ON) VGS(TH) I = 10A, V = 10VD GS gFS Forward transconductance V =40V, I =10A DS D 24.6 S Gate to drain charge (Miller charge)QGD 22 I = 20A, L=5.0mHAS mJ V =400V, V =0V DS GS UNITMin. 0.5 0.44 THERMAL RESISTANCE TO-3P(B) PARAMETER Thermal resistance, junction to ambient Thermal resistance, junction to case TO-3P(B) SYMBOL Rth(j-c) Rth(j-a) Rth(c-s) Thermal resistance, case to heatsink Typ. Max. ºC/W UNIT V μC Max. SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (T = 25°C unless otherwise specified)C I = 20A, V = 0VSD GS TEST CONDITIONS Integral reverse P-N junction diode in the MOSFET I = 20A, V = 0V, SD GS dI /dt = 100A/µs F PARAMETER Reverse recovery time Pulsed source current Continuous source to drain current Diode forward voltage SYMBOL Is (IsD) VSD ISM trr Reverse recovery chargeQrr A ns Typ.Min. 500 7.2 D (Drain) G (Gate) S (Source) 1.4 Note: 1. Pulse test: Pulse width ≤ 300µs, duty cycle ≤ 2%. 3. I =20A, V =50V, L=5.0mH, R = 25Ω, starting T =25°C.AS DD GS J 2. Essentially independent of operating temperature.

www.nellsemi.com Page 3 of 7 ORDERING INFORMATION SCHEME MOSFET series Current rating, ID Voltage rating, VDS 20 = 20A 50 = 500V

20 N 50 B

B = TO-3P(B) N = N-Channel ■ Gate charge test circuit & waveform Same Type as D.U.T. (D.U.T) 12V 300μF200μF 50KΩ VGS 3mA VDS VGS 10V Qg Qgs Qgd D.U.T. RL VDS VGS RG VDD VDS VGS 90% 10% td(ON) tr td(OFF) tf 10V ton toff ■ RESISTIVE SWITCHING TEST CIRCUIT & WAVEFORM

www.nellsemi.com Page 4 of 7 VDD Time BVDSS 10V RG VDS lD L D.U.T. lAS VDD l (t)D E = AS 2LlAS BVDSS BV - DSS VDD tP V (t)DS ■ UNCLAMPED INDUCTIVE SWITCHING & WAVEFORMS tp ■ PEAK DIODE RECOVERY dv/dt TEST CIRCUIT & WAVEFORMS D.U.T. Driver Same Type as DUT dv/dt controlled by R* G l controlled by pulse period* SD VDD VDS VGS RG ISD VGS (Driver) lSD (D.U.T) (D.U.T) VDS 10V VDD Gate Pulse Width Gate Pulse PeriodD= l , Body Diode Forward CurrentFM lRM di/dt Body Diode Reverse Current Body Diode Recovery dv/dt Body Diode Forward Voltage Drop L

www.nellsemi.com Page 5 of 7 Fig.1 On-State characteristics Drain-Source voltage, V (V)DS Gate-Source voltage, V (V)GS Drain Current, l (A) D Drain current, l (A)D Fig.2 Transfer characteristics ■ TYPICAL CHARACTERISTICS -110 010 110 010-110 110 010 110 210 2 4 6 8 10 VGS Top: 15V 10V 6.5V Bottorm: 5.5V Note: 2. T 250µs Pulse Test = 25°CC 150ºC 25ºC -55ºC Note: 1. V = 40VDS 2. 250µs Pulse Test Fig.4 Body diode forward voltage variation vs. Source current and Temperatue Reverse drain current, l (A)SD Source-Drain voltage, V (V)SD Capacitance (pF) Drain-Source voltage, V (V)DC Fig.3 On-Resistance variation vs. drain current and gate voltage Drain-Source On-Resistance, R (Ω)DS(ON) Drain current, I (A)D 0.4 0.2 0.0 0 15 30 45 60 75 0.6 0.8 Fig.5 Capacitance characteristics Fig.6 Gate charge characteristics Gate-to-Source voltage,V (V)GS 6000 5000 4000 3000 2000 1000 0 10 20 30 40 50 Total gate charge, Q (nC)G V = 10VGS V = 20VGS Note: T = 25°CC 010 110 150ºC 25ºC Note: 1. V = 0VGS 2. 250µs Pulse Test 010-110 110 Note: l = 20AD V = 100VDS V = 250VDS V = 400VDS 1.4 1.6 Coss Ciss Crss C = ( )iss C +C C = shorted gs gd ds C = C +Coss ds gd C = Crss gd Note: 1. V = 0VGS 2. f = 1 MHz

www.nellsemi.com Page 6 of 7 Fig.7 Breakdown voltage variation vs. Temperature Fig.8 On-Resistance variation vs. Temperature Drain-Source breakdown voltage, BV (Normalized) Dss Drain-Source On-Resistance, R Ds(ON) (Normalized) 1.2 1.1 1.0 0.9 0.8 -100 -50 0 50 100 150 200 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 0 50 100 150 Junction temperature, T (°C)j Junction temperature, T (°C)J Note: 1. V = 10VGS 2. l = 10AD Fig.9 Maximum safe operating area Drain current, l (A)D 010 110 210 -110 110 210 310010 Drain-Source voltage, V (V)DS Operation in This Area by RDS (on) is Limited 10μs 100μs 1ms 10ms 100ms DC Note: 1. T = 25 CC 2. T = 150°CJ 3. Sing Pulse Fig.10 Maximum drain current vs. Case temperature 25 50 75 100 125 150 Drain current, l (A)D Case temperature, T (°C)J 200-100 Note: 1. V = 0VGS 2. l = 250μAD Note: 1. V = 0VGS 2. l = 250μAD 10-3 -110 01010-2-410-510 110 10-2 -110 010 Thermal response, Rth(j-c) (t) Fig.11 Transient thermal response curve Square wave pulse duration, t (sec)1 PDM Notes: 2. Duty factor, D = t / t1 2 3. T - T = P * R (t) JM C DM th(j-c) 1. Rth(j-c) (t) = 0.44°C/W Max. D = 0.5 0.2 0.1 0.05 0.02 0.01 Single pulse

www.nellsemi.com Page 7 of 7 Case Style TO-3PB 15.6±0.4 9.6 2.04.0 19.9±0.320.0 min 4.0 max 2 1.05 +0.2 -0.1 5.45±0.1 5.45±0.1 Φ3.2 0,1± 1.8 5.0 .±0 2 4.8±0.2 2.0±0.1 0.65 +0.2 -0.1 1.4 G D S 1 2 3 All dimensions in millimeters(inches) D (Drain) G (Gate) S (Source)