20N50 ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc websit e：： ：： www.iscsemi.com isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor 20N50
- · ··FEATURES
- Drain Current I D= 20A@ T C=25 ℃
- Drain Source Voltage- : V DSS = 500V(Min)
- Low ON Resistance R DS(on) = 0.27 Ω(Max)
- Low leakage current
- Fast Switching
- · ··DESCRITION
- Designed for high efficiency switch mode power supply.
- · ··ABSOLUTE MAXIMUM RATINGS(T a=25 ℃℃ ℃℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 20 A IDM Drain Current-Single Plused 80 A PD Power Dissipation 150 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature range -55~150 ℃
- · ··THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.833 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 50 ℃/W
INCHANGE Semiconductor isc Product Specification isc websit e：： ：： www.iscsemi.com isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor 20N50
ELECTRICAL CHARACTERISTICS
TC=25 ℃℃ ℃℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS = 0; I D= 0.25mA 500 V VGS (th ) Gate Threshold Voltage VDS = V GS ; I D= 1mA 2 4 V RDS( on ) Drain-Source On-Resistance VGS = 10V; I D= 10A 0.27 Ω IGSS Gate-Body Leakage Current VGS = ±30V;V DS = 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS = 500V; V GS = 0 10 μA VSD Forward On-Voltage I S= 20A; V GS = 0 1.7 V
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